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| Preliminary Preliminary Product Description Stanford Microdevices' NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. NGA-186 DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier Small Signal Gain vs. Frequency 25 20 15 dB 10 5 0 0 1 2 3 4 5 6 7 8 Frequency GHz Parameters: Test Conditions: Z0 = 50 Ohms, ID = 50 mA, T = 25C Output Power at 1dB Compression Product Features * 12.0dB Gain, 14.7 dBm P1dB at 1950Mhz * Cascadable 50 ohm: 1.2:1 VSWR * Patented GaAs HBT Technology * Operates from Single Supply * Low Thermal Resistance Package * Unconditionally Stable Applications * Cellular, PCS, CDPD * Wireless Data, SONET Symbol Units f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm dBm dBm dBm dB dB dB MHz f = DC - 6000 MHz f = DC - 6000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 2000 MHz dB dB dB dB V C/W Min. Typ. 14.6 14.7 14.9 32.9 31.7 31.1 12.4 12.0 11.8 5600 1.2:1 1.2:1 16.5 16.4 16.4 4.0 4.1 120 Max. P1dB IP3 Third Order Intercept Point Power out per tone = 0 dBm S21 Bandwidth S11 S22 S12 NF VD Rth, j-l Small Signal Gain 3dB Bandwidth Input VSWR Output VSWR Reverse Isolation Noise Figure Device Voltage Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 1 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Parameter Supply Current Device Voltage Operating Temperature Maximum Input Power Storage Temperature Range Operating Junction Temperature (TJ) Value 110 6.0 -40 to +85 +10 -40 to +150 +150 Unit mA V C dBm C C Key parameters, at typical operating frequencies: Parameter 500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation Typical 25C 12.5 32.6 14.7 30.1 16.5 12.4 32.9 14.6 29.9 16.5 12.0 31.7 14.7 27.6 16.4 11.8 31.1 14.9 25.3 16.4 Test Condition Unit dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB (ID = 50mA, unless otherwise noted) Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm Tone spacing = 1 MHz, Pout per tone = 0dBm 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 2 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Pin # 1 Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Same as Pin 2. Device Schematic 2 3 4 Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) Rbi as (Ohms) 5V 18 8V 75 9V 100 12V 1uF 160 68pF R bias Vs For 9V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 2 1 3 100pF 4 100pF 50 ohm microstrip Application Schematic for Operation at 1950 MHz 1uF 22pF R bias Vs 22nH 50 ohm microstrip 2 1 3 68pF 4 68pF 50 ohm microstrip 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 3 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Electrical Specifications at Ta = 25C S21, ID =50mA, T=25C S12, ID =50mA, T=25C dB dB Frequency GHz S11, ID =50mA, T=25C Frequency GHz S22, ID =50mA, T=25C dB dB Frequency GHz Frequency GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 4 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Typical S-Parameters, ID = 50mA (No external matching, de-embedded to device leads) S11 Freq GHz 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5.50 6.00 6.50 7.00 7.50 8.00 mag 0.030 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 0.032 0.033 0.033 0.034 0.034 0.035 0.036 0.038 0.039 0.040 0.041 0.043 0.048 0.054 0.062 0.074 0.085 0.099 0.115 0.126 0.139 0.153 0.171 0.185 0.197 0.208 0.220 0.252 0.279 0.303 0.322 0.351 0.396 Ang -1 4 7 11 15 18 22 25 29 32 35 39 42 45 49 52 55 58 60 65 68 74 82 88 94 98 100 100 100 101 102 102 101 100 99 99 96 92 87 82 80 78 dB 12.6 12.6 12.6 12.5 12.5 12.5 12.5 12.4 12.4 12.4 12.4 12.3 12.3 12.3 12.2 12.2 12.1 12.1 12.0 12.0 12.0 11.9 11.8 11.7 11.6 11.5 11.3 11.2 11.0 10.8 10.7 10.6 10.5 10.3 10.3 10.1 9.7 9.3 8.9 8.5 8.3 7.8 S21 mag 4.264 4.261 4.248 4.237 4.226 4.216 4.202 4.190 4.163 4.165 4.147 4.131 4.116 4.102 4.085 4.064 4.043 4.034 3.997 3.983 3.965 3.924 3.874 3.828 3.791 3.738 3.691 3.618 3.544 3.481 3.439 3.383 3.338 3.291 3.256 3.199 3.066 2.905 2.773 2.672 2.586 2.460 Ang 179 177 174 172 169 166 164 161 158 156 153 150 147 145 142 139 136 134 132 129 126 121 116 111 106 101 96 91 87 82 78 73 69 64 60 54 43 33 22 13 3 -8 dB -16.4 -16.4 -16.4 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.5 -16.4 -16.4 -16.4 -16.4 -16.4 -16.4 -16.4 -16.4 -16.3 -16.3 -16.3 -16.3 -16.3 -16.3 -16.3 -16.3 -16.2 -16.2 -16.2 -16.2 -16.2 -16.2 -16.3 -16.3 -16.2 -16.4 S12 mag 0.152 0.151 0.151 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.150 0.151 0.151 0.151 0.152 0.151 0.152 0.152 0.152 0.153 0.153 0.153 0.153 0.153 0.153 0.154 0.154 0.154 0.155 0.155 0.155 0.155 0.154 0.153 0.154 0.154 0.152 Ang 0 0 -1 -2 -2 -3 -3 -4 -5 -5 -5 -6 -7 -7 -8 -8 -9 -9 -10 -10 -11 -12 -13 -14 -16 -17 -18 -20 -21 -22 -23 -25 -26 -27 -28 -30 -34 -37 -41 -44 -48 -53 mag 0.076 0.076 0.075 0.074 0.073 0.071 0.069 0.067 0.064 0.062 0.060 0.058 0.055 0.054 0.052 0.050 0.048 0.047 0.045 0.046 0.047 0.051 0.060 0.072 0.090 0.106 0.123 0.144 0.161 0.179 0.193 0.210 0.227 0.248 0.268 0.293 0.344 0.381 0.412 0.446 0.485 0.531 S22 Ang -1 -3 -7 -10 -13 -16 -19 -23 -28 -31 -36 -41 -48 -53 -59 -68 -77 -84 -94 -105 -117 -138 -160 -175 172 163 156 149 144 138 136 133 131 128 126 122 114 107 100 93 86 80 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 5 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number NGA-186 Reel Size 7" Devices/Reel 1000 Part Symbolization The part will be symbolized with a "N1" designator on the top surface of the package. Package Dimensions N1 PCB Pad Layout N1 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 6 Preliminary Preliminary NGA-186 DC-6.0 GHz 4.1V GaAs HBT Component Tape and Reel Packaging Tape Dimensions For 86 Outline DESCRIPTION Cavity Length Width Socket Depth Pitch Bottom Hole diameter Diameter Pitch Position Width Tape Thickness SYMBOL A B H K P D1 Do Po E C t W T F P2 SIZE (MM) 6.10 0.10 6.20 0.10 3.10 0.10 2.00 0.10 8.00 0.10 1.50 min. 1.50 0.10 4.00 0.10 1.75 0.10 9.10 0.25 0.05 0.01 12.00 0.30 0.30 0.05 5.50 0.05 2.00 0.05 Perforation Cover Tape Carrier Tape Width Tape Thickness Distance Cavity to Perforation (Width Direction) Cavity to Perforation (Length Direction) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101101 Rev C 7 |
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