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SKiiP 20 NAB 06 - SKiiP 20 NAB 06 I Absolute Maximum Ratings
Symbol Inverter VCES VGES IC ICM IF = -IC IFM = -ICM Conditions 1) Values 600 20 22 / 15 44 / 30 36 / 24 72 / 48 800 25 370 680 - 40 . . . + 150 - 40 . . . + 125 2500 Units V V A A A A V A A A2s C C V
Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 C
MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 20 NAB 06 SKiiP 20 NAB 06 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
Case M2
Bridge Rectifier VRRM Theatsink = 80 C ID IFSM tp = 10 ms; sin. 180 , Tj = 25 C tp = 10 ms; sin. 180 , Tj = 25 C I2t Tj Tstg Visol AC, 1 min.
Characteristics
Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) C VCEsat VCC = 300 V; VGE = 15 V td(on) tr IC = 15 A; Tj = 125 C td(off) Rgon = Rgoff = 68 tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter VF = VEC IF = 25 A Tj = 25 (125) C VTO Tj = 125 C rT Tj = 125 C IF = 25 A, VR = - 300 V IRRM diF/dt = - 500 A/s Qrr Eoff VGE = 0 V, Tj = 125 C per diode Rthjh Diode 2) - Chopper VF = VEC IF = 10 A Tj = 25 (125) C VTO Tj = 125 C Tj = 125 C rT IRRM IF = 10 A, VR = - 300 V diF/dt = - 200 A/s Qrr VGE = 0 V, Tj = 125 C Eoff Rthjh per diode Diode - Rectifier VF IF = 25 A, Tj = 25 C Rthjh per diode Temperature Sensor RTS T = 25 / 100 C Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 - 8 2 min. - - - - - - - - - - - - - - - - - - - - - - - - typ. max. Units 2,1(2,2) 2,7(2,8) V 35 70 ns 50 100 ns 250 370 ns 500 750 ns 2,2 - mJ 0,8 - nF - 2,0 K/W V 1,45(1,4) 1,7(1,7) V 0,9 0,85 m 32 22 - A 25 - C 2,5 - mJ 0,75 1,7 K/W - V 1,45(1,4) 1,7(1,7) V 0,9 0,85 m 80 55 A - 13 C - 1,5 mJ - 0,45 K/W 2,7 - 1,2 - 1000 / 1670 - M2 2,5 - 2,6 V K/W Nm
UL recognized file no. E63532
* *
specification of shunts and temperature sensor see part A common characteristics see page B16-3
Options * also available with single phase rectifier (called 20 NEB 06 or 20 NEB 06 I3)) * also available with faster IGBTs (type ... 063), data sheet on request
1) 2)
3) 4)
Theatsink = 25 C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. 5 % 4) 1% 16,5 m 10 m B 16 - 23
Rcs(dc) Rcs(ac) 000131
(c) by SEMIKRON
Fig. 1 Typ. output characteristic, tp = 80 s; 25 C Tj = 125 C VCE = 300 V VGE = 15 V RG = 68
Fig. 2 Typ. output characteristic, tp = 80 s; 125 C Tj = 125 C VCE = 300 V VGE = 15 V IC = 15 A
Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 15 A
Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz
Fig. 5 Typ. gate charge characteristic B 16 - 24
Fig. 6 Typ. capacitances vs. VCE 000131 (c) by SEMIKRON
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC 1.2
Mini0607
Tj = 150 C VGE = 15 V
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 Th [C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th) Tj = 150 C VGE = 15 V Tj = 150 C VGE = 15 V tsc = 10 s Lext < 25 nH
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic (c) by SEMIKRON
Fig. 12 Forward characteristic of the input bridge diode 0698 B 16 - 3
MiniSKiiP 2
+rect +B +DC I+
SKiiP 20 NAB 06 ... SKiiP 21 NAB 06 ... SKiiP 20 NAB 12 ... SKiiP 22 NAB 12 ...
Circuit Case M2 Layout and connections for the customer's printed circuit board Note: The shunts are available only by option I
g1 L1 L2 L3 B gB +T -T g2
g3
g5 U V W
g4 Isu 0u
g6 Isv 0v Isw 0w
Hauptanschlu power connector control pin
Steueranschlu
-rect
-B
-DC
-DC/A

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