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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 20 16 10 48 135 85 +150 -40 +150 50 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=10mA VGE=15V IC=10A VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=15V RG=160 VCC=600V IC=10A VGE=+15V RG=16 IF=10A VGE=0V IF=10A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.5 Units mA A V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 3.0 350 5.5 1200 250 80 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.92 1.47 Units C/W Collector Current vs. Collector-Emitter Voltage 25 T j= 2 5 C 25 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 20 V GE = 2 0 V , 1 5 V 1 2 V 20 V GE = 2 0 V , 1 5 V 12V [A] C Collector Current : I Collector Current : I 15 C [A] 15 10V 10 10 10V 5 5 8V 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V] 8V 0 Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 20A 10A 4 I C= 20A 10A 5A 2 5A 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 1 6 , V GE = 1 5 V , T j= 2 5 C Switching Time vs. Collector Current V CC = 6 0 0 V , R G= 1 6 , V GE = 1 5 V , T j= 1 2 5 C 1000 1000 t off tf t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] tf on Switching Time : t Switching Time : t t on 100 on t on 100 tr tr 0 5 10 15 20 0 5 10 15 20 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =600V, I C = 1 0 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =600V, I C = 1 0 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] 1000 t off tf t off tf t on on Switching Time : t Switching Time : t on t on 100 tr tr 10 100 Gate Resistance : R G [ ] 100 10 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 1000 Dynamic Input Characteristics T j= 2 5 C 25 VCC= 400V 600V 800V [V] , C res , C ies [pF] 1000 CE Collector-Emitter Voltage : V Capacitance : C oes 100 C oes 600 15 C res 400 10 10 200 5 1 0 5 10 15 20 25 30 35 0 0 20 40 60 80 100 120 140 G a t e C h a r g e : Q G [nQ] 160 0 180 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 200 / dt = 1 0 0 A / s e c 10 / dt= 1 0 0 A / s e c [nsec] 125C 150 [A] 125C 8 rr Reverse Recovery Time : t Reverse Recovery Current : I rr 6 25C 25C 100 4 50 2 0 0 5 10 15 0 0 5 10 15 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V GE [V] C ies 800 20 Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 C , R G > 1 6 25 200 Typical Short Circuit Capability V CC = 8 0 0 V , R G = 1 6 , T j= 1 2 5 C 80 [A] 20 [A] SC t SC I SC C 100 40 10 50 20 5 0 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 25 300 I F = 1 0 A , T j= 1 2 5 C -di / dt 30 [A] rr 15 Forward Current : I I rr 150 15 10 100 t rr 50 10 5 5 0 0 1 2 3 4 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 10 0 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I 200 20 Reverse Recovery Time : t F rr [A] 20 [nsec] T j= 1 2 5 C 2 5 C 250 25 Short Circuit Time : t 15 Short Circuit Current : I Collector Current : I SC [s] 150 60 Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
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