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AP3310GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
Simple Drive Requirement 2.5V Gate Drive Capability
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-20V 150m -10A
Fast Switching Characteristic
G S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. This device is suited for low voltage and battery power applications.
G G D S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating - 20 +12 -10 -6.2 -24 25 0.01 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 5.0 110 Units /W /W
Data and specifications subject to change without notice
1 200808155
AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150 C)
o
Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=+12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6,VGS=-5V RD=6 VGS=0V VDS=-6V f=1.0MHz
Min. Typ. Max. Units -20 -0.5 -0.1 4.4 6 1.5 0.6 25 60 70 60 300 180 60 150 250 -1 -25 V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
RDS(ON)
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VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate-Source Leakage Total Gate Charge
2
+100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=-1.2V
1
Min. Typ. Max. Units -10 -24 -1.2 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25, IS=-10A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP3310GH/J
24
20
-4.5V T C =25 C
o
T C =150 o C
-4.5V
18
-4.0V
15
-4.0V
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-ID , Drain Current (A)
-ID , Drain Current (A)
-3.5V
12
-3.5V
10
-3.0V
-3.0V
-2.5V
5
6
-2.5V
V GS = -2.0V V GS = -2.0V
0 0.0 2.5 5.0 7.5 10.0
0 0 2 4 6 8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
1.8
I D = -2.8A T C =25
600
I D = -2.8A V GS = -4.5V
1.5
400
Normalized R DS(ON)
0 2 4 6 8 10
RDS(ON) (m)
1.2
200
0.9
0
0.6 -50 0 50 100 150
-V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3
AP3310GH/J
10
30
25 8
-ID , Drain Current (A)
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6
20
PD (W)
4 2 0 25 50 75 100 125 150
15
10
5
0 0 50 100 150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R thjc)
0.2
100us -ID (A)
0.1 0.1 0.05
10
1ms
0.02
PDM
Single Pulse
t
0.01
T
10ms T C =25 C Single Pulse 100ms
0.01
Duty Factor = t/T Peak T j = PDM x Rthjc + TC
1 1 10 100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP3310GH/J
f=1.0MHz
5 1000
I D =-2.8A V DS =-6V
4
Ciss
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3
-VGS , Gate to Source Voltage (V)
Coss C (pF)
100
2
Crss
1
0 0 2 4 6 8
10 1 3 5 7 9 11 13
Q G , Total Gate Charge (nC)
-V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
10
1.5
T j =150 o C
T j =25 o C
1
1
-VGS(th) (V)
0.5 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50
o
-IS(A)
0
100
150
-V SD (V)
T j , Junction Temperature ( C)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
5
AP3310GH/J
VDS
RD
90%
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D VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS RG G
10%
S -5 V VGS
VGS td(on) tr td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS TO THE OSCILLOSCOPE 0.3 x RATED VDS G S -1~-3mA I
G
QG
D
-5V
QGS QGD
VGS
ID
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D D1
SYMBOLS
Millimeters
MIN NOM MAX
A2 A3 B1 D D1 E3
1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35
2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50
2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65
E2
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E3 E1
F F1 E1 E2 e C
B1
F1
F
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
e
e
A2
R : 0.127~0.381
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number Package Code meet Rohs requirement
3310GH
LOGO
YWWSSS
Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D A
Millimeters
SYMBOLS
c1
D1 A A1 B1
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MIN
NOM
MAX
2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88
2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84
2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80
E1
E
B2
c c1
D
A1
B2 B1 F
D1 E E1
e
F
1.All Dimensions Are in Millimeters.
c
2.Dimension Does Not Include Mold Protrusions.
e
e
Part Marking Information & Packing : TO-251
Part Number
3310GJ YWWSSS
meet Rohs requirement for low voltage MOSFET only
Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
8

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