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| CED62A2/CEU62A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 48A, RDS(ON) = 12m @VGS = 4.5V. RDS(ON) = 17m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C 12 48 140 48 0.38 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.6 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://www.cetsemi.com CED62A2/CEU62A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forwand Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 45A VDS = 20V, ID = 18A, VGS = 5V VDD = 10V, ID = 18A, VGS = 5V, RGEN = 3.3 17 12 55 30 35 4 12 45 1.3 35 25 110 60 45 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 4.5V, ID = 18A VGS = 2.5V, ID = 9A VDS = 5V, ID = 18A VDS = 20V, VGS = 0V, f = 1.0 MHz 0.5 10 13 10 2600 430 310 1.2 12 17 V m m S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V A Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 gFS Ciss Coss Crss Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CED62A2/CEU62A2 40 VGS=4.5,4.0,3.5,3.0V 50 VGS=2.5V 25 C ID, Drain Current (A) 30 ID, Drain Current (A) 40 30 20 VGS=2.0V 10 20 10 TJ=125 C 0 -55 C VGS=1.5V 0 0 1 2 3 4 0 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 3600 3000 2400 1800 1200 600 0 0 5 10 Coss Crss 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics C, Capacitance (pF) Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=18A VGS=4.5V -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 2 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250A IS, Source-drain current (A) 25 50 75 100 125 150 10 10 1 10 -25 0 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED62A2/CEU62A2 VGS, Gate to Source Voltage (V) 10 VDS=20V ID=18A 10 3 ID, Drain Current (A) 8 RDS(ON)Limit 10 2 6 10 1 100s 1ms 10ms DC 4 10 0 2 0 0 20 40 60 80 10 -1 TC=25 C TJ=150 C Single Pulse 10 -1 6 0 10 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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