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| www..com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 T stg Tj PC VCBO VCEO SWITCHING AND AMPLFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Storage Temperature - - - - - Junction Temperature - - - - - - Collector Dissipation- - - Collector-Base Voltage- - - - Collector-Emitter Voltage- - - - Emitter-Base Voltage - - - - - - - - - - - Collector Current - - - - - - - Suitable for AF-Driver stages and low power output stages Ta=25ae(c) -55~150ae 150ae 625mW -50V -45V -5V -500mA TO-92 1D Collector C 2D Base B 3D Emitter E V EBO IC ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO HFE HFE 1(c) 2(c) -50 -45 -5 -100 -10 100 40 600 -0.7 -1.2 100 8 |I V V V nA A IC=-100|I IE=-100|I A, IE=0 A IC=0 IC=-10mA, IB=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Collector-Base Capacitance VCE(sat) VBE(ON) fT Ccbo V V MHz pF IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA VCB=-10V, IE=0 F=1MHz hFE Classification 16 100 250 160 25 400 250 40 600 www..com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 |
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