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TSUS520.
Vishay Telefunken
GaAs Infrared Emitting Diodes in o 5 mm (T-13/4 ) Package
Description
TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
94 8390
Features
D Low cost emitter D Low forward voltage D High radiant power and radiant intensity D Suitable for DC and high pulse current operation D Standard T-13/4 (o 5 mm) package D Angle of half intensity = 15 D Peak wavelength l p = 950 nm D High reliability D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 150 300 2.5 210 100 -55...+100 -55...+100 260 375 Unit V mA mA A mW C C C C K/W
tp/T = 0.5, tp = 100 m s tp = 100 m s
t
x 5 sec, 2 mm from case
Document Number 81055 Rev. 2, 20-May-99
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TSUS520.
Vishay Telefunken Basic Characteristics
Tamb = 25_ C Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Temp. Coefficient of f e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of l p Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF TKVF IR Cj TKf e Min Typ 1.3 -1.3 30 -0.8 15 950 50 0.2 800 400 800 400 Max 1.7 100 Unit V mV/K
mA
pF %/K deg nm nm nm/K ns ns ns ns
lp Dl
TKlp tr tr tf tf
Type Dedicated Characteristics
Tamb = 25_ C Parameter Forward Voltage g Test Conditions IF=1.5A, tp=100m s m IF=100mA, tp=20ms Radiant Intensity IF=1.5A, tp=100m s m Type TSUS5200/5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 Symbol VF VF Ie Ie Ie Ie Ie Ie Min Typ 2.2 2.2 20 25 30 180 230 280 13 14 15 Max 3.4 2.7 Unit V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW
10 15 20 95 120 170
Radiant Power
IF=100mA, tp=20ms
fe fe fe
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Document Number 81055 Rev. 2, 20-May-99
TSUS520.
Vishay Telefunken Typical Characteristics (Tamb = 25_ C unless otherwise specified)
250 PV - Power Dissipation ( mW ) IF - Forward Current ( mA ) 100 200 104 103 102 101 100 10-1 0
94 7996 e
150 RthJA 100
50 0 0 20 40 60 80
1
2
3
4
94 7957 e
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
250 200 V Frel - Relative Forward Voltage IF - Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
1.2 1.1 IF = 10 mA 1.0 0.9
150 100 RthJA 50 0 0 20 40 60 80 100
0.8 0.7 0 20 40 60 80 100
94 7988 e
Tamb - Ambient Temperature ( C )
94 7990 e
Tamb - Ambient Temperature ( C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1000 I e - Radiant Intensity ( mW/sr )
101 I F - Forward Current ( A )
IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.5 1.0 10-1 10-2
100
TSUS 5202
TSUS 5200 10
1 10-1 100 101 102
94 7991 e
TSUS 5201 100 101 102 103 IF - Forward Current ( mA ) 104
94 7989 e
tp - Pulse Duration ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81055 Rev. 2, 20-May-99
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TSUS520.
Vishay Telefunken
1000 1.25 TSUS 5202 100 TSUS 5200 10
F e rel - Relative Radiant Power
F e - Radiant Power ( mW )
1.0
0.75 0.5
1
0.25 IF = 100 mA 0 900
0.1 100
94 7992 e
101 102 103 IF - Forward Current ( mA )
104
94 7994 e
950
1000
l - Wavelength ( nm )
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0 10 20
1.6 I e rel - Relative Radiant Intensity
30
1.2 I e rel ; F e rel IF = 20 mA 0.8
40 1.0 0.9 0.8 0.7 50 60 70 80
0.4
0 -10 0 10
94 7993 e
50
100
140
94 7995 e
0.6
0.4
0.2
0
0.2
0.4
0.6
Tamb - Ambient Temperature ( C )
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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Document Number 81055 Rev. 2, 20-May-99
TSUS520.
Vishay Telefunken Dimensions in mm
95 10916
Document Number 81055 Rev. 2, 20-May-99
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TSUS520.
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81055 Rev. 2, 20-May-99

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