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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV75/12 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability * internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 75 PINNING PIN 1
handbook, halfpage
BLV75/12
Gp dB > 6,5
C % > 55
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz Total power dissipation at Tmb = 25 C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. vCBOM VCEO VEBO max. max. max.
BLV75/12
36 V 16,5 V 4V 15 A 45 A 150 W 200 C
-65 to + 150 C
102 handbook, halfpage
MGP390
MGP391
handbook, halfpage
200
IC (A)
Ptot (W) 100
10 Th = 70 C
Tmb = 25 C
1 1 10
16.5
0 VCE (V) 102 0 100 Th (C) 200
I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. soar. Rth mb-h = 0,2 K/W.
Fig.3
Power/temperature derating curves; Rth mb-h = 0,2 K/W.
THERMAL RESISTANCE Dissipation = 96 W; Tmb = 25 C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth j-mb Rth mb-h = = 1,05 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain VCE = 10 V; IC = 10 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance Cre Ccf typ. typ. Cc typ. hFE min. typ. ESBR min. ICES max. V(BR)EBO min. V(BR)CEO min. V(BR)CBO min.
BLV75/12
36 V 16,5 V 4V 44 mA 20 mJ 15 55
240 pF 150 pF 3 pF
MGP392
handbook, halfpage
80
handbook, halfpage
800
MGP393
VCE = 12.5 V hFE 10 V
Cc (pF)
40
400
0 0 10 20 30 IC (A) 40
0 0 10 VCB (V) 20
Fig.4
D.C. current gain versus collector current; Tj = 25 C.
Fig.5
Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 C.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 75 Gp dB > 6,5 typ. 7,5
BLV75/12
C % > 55 typ. 63
handbook, full pagewidth
C2 C20 50 C1 L1 L2
C4 L3
C6 L4 T.U.T. L7
C8 C10 L8
C13 C15 L11
C17
C18 50
C3
C5
C7 L5
C9 L9
C11
C16
C19
R1
L6
R2 C12 C14 +VCC
MGP394
L10
Fig.6 Class-B test circuit at f = 175 MHz.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
List of components: C1 C2 C3 C4 C6 C8 C11 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) = 10 pF multilayer ceramic chip capacitor(1) = C16 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) = C5 = 75 pF multilayer ceramic chip capacitor = C7 = 100 pF multilayer ceramic chip capacitor(1) = C9 = 2 x 75 pF multilayer ceramic chip capacitors(1) in parallel = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
BLV75/12
C10 = C13 = 39 pF multilayer ceramic chip capacitor(1) C12 = 2 x 820 pF multilayer ceramic chip capacitors in parallel(1) C14 = 100 nF polyester capacitor C15 = C17 = 12 pF multilayer ceramic chip capacitor(1) C18 = C19 = 470 pF multilayer ceramic chip capacitor(1) C20 = 820 pF multilayer ceramic chip capacitor(1) L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 10 mm; leads 2 x 4 mm = 1 turn silver-plated Cu-wire (2,0 mm); int. dia. 1 mm; leads 2 x 6 mm = strip (14 mm x 6 mm) = strip (8 mm x 6 mm) = 100 nH, 7 turns closely wound enamelled Cu-wire (0,5 mm); int. dia. 3 mm; leads 2 x 7 mm = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) = strip (12 mm x 6 mm) = silver-plated copper U-shaped inductance (7 + 15 + 7) mm x 4 mm x 0,5 mm = silver-plated copper U-shaped inductance (8 + 8,5 + 6) mm x 4 mm x 0,5 mm = modified Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) with 3 parallel connected Cu wires (0,8 mm) = 2 turns silver-plated Cu-wire (2,0 mm); int. dia. 9 mm; length 7,5 mm; leads 2 x 3,5 mm
L3, L4 and L7 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric (r = 4,5), thickness 1/16 inch). R1 R2 Note 1. American Technical Ceramics capacitor type 100B or capacitor of the same quality. = 10 10%, carbon resistor = 4,7 10%, carbon resistor
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV75/12
192
handbook, full pagewidth
70
rivets
soldered copper straps ground plane removed Cu strap
L6 C12 L5 L3 L1 C1 C3 L2 C5 C7 C6 L4 L7
L10 R2 L9 C8 L8 C9
+VCC C14
R1 C2 C20 C4
C10
L11
C15 C18 C19
C13 C11 C16
C17
MGP395
Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit.
The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to be raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV75/12
MGP396
handbook, halfpage
120
handbook, halfpage
12
MGP397
120 C (%)
PL (W) 80
GP (dB) 8 GP C
80
40
4
40
0 0 10 20 PS (W) 30
0 0 40 80 PL (W)
0 120
Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W
Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W
Fig.8 Load power versus source power.
Fig.9
Power gain and efficiency versus load power.
Ruggedness in class-B operation The BLV75/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 12,5 V; Th = 25 C; Rth mb-h = 0,2 K/W. Power slump If Th is increased from 25 C to 70 C the output power slump for constant PS amounts to typ. 7% (VCE = 12,5; f = 175 MHz; Rth mb-h = 0,2 K/W).
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV75/12
MGP398
MGP399
handbook, halfpage
3
handbook, halfpage
2
ri, xi () 2 ri 1 xi
RL, XL () 1 RL
0
0
-1
XL
-1
50
100
150
f (MHz)
200
-2
50
100
150
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W
Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W
Fig.10 Input impedance (series components).
Fig.11 Load impedance (series components).
handbook, halfpage
16
MGP400
GP (dB)
12
8
4 0 50 100 150 f (MHz) 200
Typical values; VCE = 12,5 V; PL = 75 W; f = 50 to 200 MHz; class-B operation; Rth mb-h = 0,2 K/W
Fig.12 Power gain versus frequency.
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV75/12
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV75/12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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