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| CYStech Electronics Corp. www..com Spec. No. : C210M3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features * High breakdown voltage. (BVCEO = 400V) * Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB=10mA/1mA. * Complementary to BTPA94M3 Symbol BTNA44M3 Outline SOT-89 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limit 400 400 6 300 600 208 150 -55~+150 Unit V V V mA mW C/W C C BTNA44M3 CYStek Product Specification CYStech Electronics Corp. www..com Spec. No. : C210M3-H Issued Date : 2003.06.12 Revised Date : Page No. : 2/4 Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 hFE 2 *hFE 3 *hFE 4 fT Cob Min. 400 400 6 40 52 45 40 20 Typ. 0.1 Max. 10 10 0.4 0.5 0.75 1.5 270 7 Unit V V V A A V V V V MHz pF Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VEB=6V,IC=0 IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE 2 Rank Range K 52~120 P 82~180 Q 120~270 BTNA44M3 CYStek Product Specification CYStech Electronics Corp. www..com Spec. No. : C210M3-H Issued Date : 2003.06.12 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE 10000 Saturation Voltage-(mV) VCESAT@IC=10IB 1000 Saturation Voltage vs Collector Current 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 0.1 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) Power Dissipation---PD(mW) 700 600 Power Derating Curve VBESAT@IC=10IB 500 400 300 200 100 0 1000 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0 50 100 150 200 Ambient Temperature---TA( ) BTNA44M3 CYStek Product Specification CYStech Electronics Corp. www..com Spec. No. : C210M3-H Issued Date : 2003.06.12 Revised Date : Page No. : 4/4 SOT-89 Dimension A Marking: 1 2 C 3 44 H B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA44M3 CYStek Product Specification |
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