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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3
1.5+/-0.1
0. 1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. www..com 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V V 10 Tc=25C 3.1 W mW Zg=Zl=50 10 mA 200 C 150 -40 to +125 C C/W Junction to case 40
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS Vth Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA MIN 1 0.3 55 LIMITS TYP MAX. 25 1 2 3 0.7 65 UNIT uA uA V W %
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HHS1
MITSUBISHI ELECTRIC 1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
Vgs-Ids CHARACTERISTICS 0.6 0.5 0.4
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 30MHz,0.3W
4 CHANNEL DISSIPATION Pch(W)
3 Ids(A)
On PCB(*1) with Heat-sink
2
0.3 0.2
1
On PCB(*1)
0.1 0.0 0 1 2 3 Vgs(V) 4 5
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Vds-Ids CHARACTERISTICS 1.4 1.2 1.0 Ids(A) 0.8 0.6 0.4 0.2
Vgs=3V Ta=+25C Vgs=10V Vgs=9V Vgs=8V Vgs=7V
Vds VS. Ciss CHARACTERISTICS 20
Ta=+25C f=1MHz
15 Ciss(pF) 10 5 0 0 5 10 Vds(V) 15 20
Vgs=6V
Vgs=5V
Vgs=4V
0.0 0 2 4 6 Vds(V) 8 10
Vds VS. Coss CHARACTERISTICS 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 4
Ta=+25C f=1MHz
15 Coss(pF) Crss(pF)
3
10
2
5
1
0 0 5 10 Vds(V) 15 20
0 0 5 10 Vds(V) 15 20
RD00HHS1
MITSUBISHI ELECTRIC 2/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
Pin-Po CHARACTERISTICS 100
Po
RoHS Compliance, TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 35
Po
Silicon MOSFET Power Transistor 30MHz,0.3W
100
Gp
1.2 1.0 Pout(W) , Idd(A) 0.8 0.6 0.4 0.2 0.0 0 2 4 6 Pin(mW) 8 10
Idd Ta=25C f=30MHz Vdd=12.5V Idq=50mA d
Po(dBm) , Gp(dB) , Idd(A)
30 25 20 15 10
80 d(%) 60 40
Ta=+25C f=30MHz Vdd=12.5V Idq=50mA
90 80 70 60 50 40 d(%)
10 Jan 2006
20 0
-20 -15 -10 -5 0 Pin(dBm)
5
10
Vdd-Po CHARACTERISTICS 1.2 1.0 0.8 Po(W) 0.6 0.4 0.2 0.0 2 4 6 8 10 Vdd(V) 12 14 0
Po Ta=25C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2 120 0.6 0.5
Vds=10V Tc=-25~+75C -25C
+25C
+75C
Idd
80 Idd(mA) Ids(A)
0.4 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5
40
Vgs-gm CHARACTORISTICS 0.6 0.5 0.4 gm(S) 0.3 0.2 0.1 0.0 0 1 2 3 Vgs(V) 4 5
-25C +25C +75C Vds=10V Tc=-25~+75C
RD00HHS1
MITSUBISHI ELECTRIC 3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
RoHS Compliance, TEST CIRCUIT(f=30MHz)
Silicon MOSFET Power Transistor 30MHz,0.3W
V gg
V dd
330uF,50V 10uF,50V
C2 C1 180pF RF-IN 3m m 7m m L1 40pF 220pF 13m m 9m m L2 10pF 9m m 7m m 82pF 1k OHM 2.5m m 7.5m m 6m m 470pF 15OHM 15pF 40pF L3 470pF RD00HHS 1 4m m 8m m 22m m 14m m L4 RF-OUT
L1:LA L04NAR27(0.27m H) L2:LA L04NA R39(0.39uH) L3:LA L04NA R39(0.39uH) L4:LAL04NA 1R0(1uH) C1,C2:100pF,0.022uF,0.1uF in parallel Note:B oard m aterial-glas s epox i s ubs trate M ic ro s trip line width=1.0m m /50OHM ,er:4.8,t=0.6m m
RD00HHS1
MITSUBISHI ELECTRIC 4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
S12 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 S21 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7
RD00HHS1
MITSUBISHI ELECTRIC 5/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD00HHS1
MITSUBISHI ELECTRIC 6/6
10 Jan 2006

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