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| 48400 Fremont Blvd. Fremont, CA 94538 Tel: (510) 445-3068 x244 Fax: (510) 445-3060 850nm VCSEL Epiwafer Part Number: VG1A-1000 850 nm VCSEL epi structure produced using state of the art MOCVD reactor. We achieved excellent uniformity and reproducibility. Run to run wavelength reproducibility is within +/5nm. Thickness uniformity within a 3" wafer with 5mm edge exclusion is <1%. Characterization VCSEL device Results Light Output - Current Characteristic 12 10 Light Output (mW) 8 6 4 2 0 0 5 10 15 20 25 Forward Current (mA) Features: * * * * * Excellent uniformity GaAs triple quantum wells Si & C dopant (100) +/- 6 degrees substrate Proven reliability data * Custom structures available by features 25C 50C 75C 90C 100C 48400 Fremont Blvd. Fremont, CA 94538 Tel: (510) 445-3068 x244 Fax: (510) 445-3060 Part Number: VG1A-1000 Epi Specifications SB Center Wavelength 840~860 nm Uniformity 5.0nm (5 mm exclusion of 3" wafer) Uniformity 5.0nm (5 mm exclusion of 3" wafer) Uniformity 2.0nm (5 mm exclusion of 3" wafer) GaAs/ AlGaAs triple MQW High Index AlxGa1-xAs =0.15~0.2 Low Index AlxGa1-xAs x=0.9~0.99 F-P Dip Wavelength 840~860 nm PL Wavelength Active layer DBR Doping Level 1.Cap layer 2.P-DBR 3.N-DBR Defect density . . 827~833 nm ECV >1x1019 cm-3 1~5 x1018 cm-3 1~4 x1018 cm-3 300cm -2 Specification 30% Si for n-type , C for p-type Smooth surface Device Performance (for 18-20 m implant size) Parameter Threshold Current Threshold Voltage Forward Voltage Differential Resistance Reverse Voltage Slope Efficiency Symbol Ith Vth Vf Rs Vr Unit mA V V V W/A Min. Typ. 3 1.7 2.0 35 Max. 6 2.0 2.3 50 -5 0.5 Test Condition @ Ith @ 10 mA @ 10 mA @ -10 A @ 10 mA 0.2 0.35 |
Price & Availability of VG1A-1000
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