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| 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF Applications DECT PCS Personal Wireless Telephony (PWT) Cordless PBX Radio/Wireless Local Loop (RLL/WLL) Features * * * * * * * * Single Positive Supply 54% Power Added Efficiency 100% Duty Cycle 1.2:1 Input VSWR in both On and Off states 1800 to 2000 MHz Operation 16 Pin TSSOP Plastic Package Accommodates Battery Charging Conditions up to 5.5 Volts Self-Aligned MSAG(R)-Lite MESFET Process VDD1 N/C GND GND RFIN/VGG1 GND GND VGG2 VDD2 GND GND GND RFOUT/VDD3 GND GND VGG3 54% PAE 100% Duty Cycle MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating DC Supply Voltage (Pins 1, 12, 16) RF Input Power Junction Temperature Storage Temperature Range Symbol VDD PIN TJ TSTG Value 5.5 3 150 -40 to +150 Unit Vdc mW C C ELECTRICAL CHARACTERISTICS VDD= 3.6 V, PIN= -2 dBm, TA=25 C, Output externally matched to 50 Characteristic Frequency Range Output Power, f = 1900 MHz Power Gain Gain Slope, f=1930 to 1880 MHz Power Added Efficiency, f = 1900 MHz Drain Current Harmonics Input VSWR (VDD = 0.0 V) (VDD = 3.6 V) Off Isolation (VDD=0 V) Thermal Resistance (Junction of 3rd stage FET to solder point of pin 13) Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = -2 dBm) Stability (PIN = -2 dBm, VDD = 0-5.5 V, TS= -40 to +85 C, Load VSWR = 5:1) Symbol POUT GP -- IDD 2o 3o -- -- -- RTH J-S -- -- Min 1880 26.2 Typ 27.2 29.3 0.008 54 270 -34 -38 1.2:1 1.2:1 Max 1930 28.2 0.012 49 -30 -34 2.0:1 2.0:1 51 40 Unit MHz dBm dB dB/MHz % mA dBc dBc -- -- dB C/W No Degradation in Power Output All non-harmonically related outputs more than 60 dB below desired signal 901981 D, February 1999 Specifications Subject to Change Without Notice GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF APPLICATION INFORMATION +VDD 1 16 T4 C4 L3 C1 C2 N/C 2 15 3 14 RFIN T1 C3 R1 L1 T2 4 13 RFOUT T5 C6 C5 5 12 6 11 7 10 T3 L2 8 9 Figure 1. Evaluation Board Schematic List of components: C1 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL) C2 = 10 pF DLI multilayer ceramic chip capacitor (C11AH1R0B5TXL) C3 = 0.7 pF DLI multilayer ceramic chip capacitor (C11AH0R7B5TXL) C4 = 10 pF DLI multilayer ceramic chip capacitor (C11AH1R0B5TXL) C5 = 2.2 pF DLI multilayer ceramic chip capacitor (C11AH2R2B5TXL) C6 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL) (DC blocking capacitor) L1 = 2.7 nH Toko chip inductor (TKS2362CTND) L2 = 3.3 nH Toko chip inductor (TKS2363CTND) L3 = 27 nH Coilcraft chip inductor (1008CS.270XMBB) R1 = 300 chip resistor T1 = 0.19" of 50 T2 = 0.12" of 50 T3 = 0.39" of 75 T4 = 0.11" of 75 T5 = 0.14" of 50 grounded coplanar waveguide (60 mil GETEK board) grounded coplanar waveguide (60 mil GETEK board) grounded coplanar waveguide (60 mil GETEK board) grounded coplanar waveguide (60 mil GETEK board) grounded coplanar waveguide (60 mil GETEK board) Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 9. Specifications Subject to Change Without Notice 901981 D, February 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF TYPICAL CHARACTERISTICS 60 55 50 45 40 35 30 25 20 15 10 5 0 -8 1.2 1.0 0.8 POUT Drain Current, I D (Amps) D VDD = 3.6 V = 1900 MHz 0.6 0.4 0.2 0.0 IDD 60 55 50 45 40 35 30 25 20 15 10 5 0 1800 4:1 POUT (dBm) and , PAE (%) Pout (dBm) and , PAE (%) POUT 2:1 VSWR 1850 1900 1950 1:1 2000 -6 -4 -2 0 P IN , Input Power (dBm) 2 4 Frequency (MHz) Figure 2. Output power, drain current and efficiency vs. input power Figure 3. Output power, efficiency and input VSWR vs. frequency 60 55 50 45 40 35 30 25 20 15 10 5 0 2.0 1.2 30 POUT, Output Power (dBm) Drain Current, I D (Amps) D 20 10 0 -10 -20 -30 2 3 Frequency 4 5 VDD = 3.6 V PIN = -2 dBm = 1900 MHz POUT (dBm) and , PAE (%) 1.0 PIN = -2 dBm = 1900 MHz 0.8 POUT 0.6 IDD 0.4 0.2 0.0 2.5 3.0 3.5 4.0 Vdd (volts) 4.5 5.0 5.5 Figure 4. Output power, drain current and efficiency vs. supply voltage Figure 5. Harmonics Specifications Subject to Change Without Notice 901981 D, February 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3 Input VSWR VDD = 3.6 V PIN = -2 dBm 3:1 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 VDD = 3.6 V PIN = -2 dBm POUT 70 65 60 55 , PAE (%) Pout, -45 C Pout, 25 C Pout, 85 C PAE, -45 C PAE, 25 C PAE, 85 C 50 45 40 35 30 25 25 20 1820 1840 1860 1880 1900 1920 1940 1960 1980 Frequency (MHz) Figure 6. Output power and efficiency vs. frequency for different ambient temperatures 170 0.2 -170 1 20 110 100 90 80 70 180 0 0.5 60 50 2100 MHz 1890 MHz 10.6 - j9.2 -160 1800 MHz 0.5 10 1 2 5 Figure 7. Input match impedance (as seen from the end of pin 5 without IC on board) Figure 8. Output match impedance (as seen from the end of pin 12 without IC on board) Specifications Subject to Change Without Notice 901981 D, February 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 4 -80 -90 -100 -110 -12 0 -1 30 1800 MHz -1 40 1890 MHz 26.1 +j43.8 -15 0 2100 MHz 1 40 30 20 10 0 3.6V 0.5W RF Power Amplifier IC for DECT ITT2205AF MECHANICAL DATA 50 lead transition Figure 9. Component layout and printed circuit drawing for evaluation board (units in inches) Specifications Subject to Change Without Notice 901981 D, February 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 5 |
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