View IXGA12N120A3_159345.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

GenX3TM 1200V IGBTs
High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching
IXGA12N120A3 IXGP12N120A3 IXGH12N120A3
VCES = 1200V = 12A IC90 VCE(sat) 3.0V
TO-263 AA (IXGA)
G S D (Tab)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight
www..net
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load TC = 25C
Maximum Ratings 1200 1200 20 30 22 12 60 ICM = 24 VCE 0.8 * VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C C N/lb. Nm/lb.in. g g g
TO-220AB (IXGP)
G
DS
D (Tab)
TO-247 (IXGH)
G
D
S
D (Tab)
G = Gate S = Source Features
D = Drain Tab = Drain
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 10..65 / 2.2..14.6 1.13 / 10 2.5 3.0 6.0
Optimized for Low Conduction Losses International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = IC90, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 10 275 100 2.40 2.75 3.0 V V A A nA V V
VCE = VCES, VGE = 0V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
(c) 2010 IXYS CORPORATION, All Rights Reserved
DS100212B(11/10)
IXGA12N120A3 IXGP12N120A3 IXGH12N120A3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf RthJC RthCS TO-247 TO-220 0.21 0.50 Resistive Switching Times, TJ = 25C IC = IC90, VGE = 15V VCE = 960V, RG = 10 Resistive Switching Times, TJ = 125C IC = IC90, VGE = 15V VCE = 960V, RG = 10 IC = IC90, VGE = 15V, VCE = 600V VCE = 25V, VGE = 0V, f = 1MHz IC = IC90, VCE = 10V, Note 1 VGE = 10V, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 5.2 8.8 44 550 30 8 20.4 3.1 8.5 35 140 62 1035 35 167 70 1475 S A pF pF pF nC nC nC ns ns ns ns ns ns ns ns 1.25 C/W C/W C/W
1 = Gate 2 = Collector 3 = Emitter 4 = Collector
TO-263 Outline
Note
1. Pulse test, t 300s, duty cycle, d 2%.
TO-220 Outline
TO-247 Outline
www..net
Dim.
1
2
3
P
e
Terminals: 1 - Gate 3 - Emitted
2 - Collector
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1 = Gate 2 = Collector Pins: 3 = Emitter 1 - Gate
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA12N120A3 IXGP12N120A3 IXGH12N120A3
Fig. 1. Output Characteristics @ T J = 25C
24 VGE = 15V 13V 11V 10V 9V 70 60 8V 50 VGE = 15V
Fig. 2. Extended Output Characteristics @ T J = 25C
20
13V 11V
16
IC - Amperes
IC - Amperes
12
7V
40 30 20
10V 9V 8V 7V
8
6V
4 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
10 0 0 5 10 15 20 25 30
6V 5V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
24 VGE = 15V 13V 11V 10V 9V 1.8 VGE = 15V 1.6
Fig. 4. Dependence of VCE(sat) on Junction Temperature
I = 24A
20
C
IC - Amperes
16 7V 12
VCE(sat) - Normalized
8V
1.4
1.2
I
C
= 12A
8 6V 4 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1.0
0.8
I
C
= 6A
0.6 -50 -25 0 25 50 75 100 125 150
VCE - Volts
www..net
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.5 6.0 5.5 5.0 25 I
C
Fig. 6. Input Admittance
35 TJ = 25C 30
TJ = - 40C 25C 125C
VCE - Volts
4.5 4.0 3.5 12A 3.0 2.5 2.0 1.5 5 6 7 8 6A
= 24A
IC - Amperes
20 15 10 5 0
9
10
11
12
13
14
15
3
4
5
6
7
8
9
VGE - Volts
VGE - Volts
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGA12N120A3 IXGP12N120A3 IXGH12N120A3
Fig. 7. Transconductance
12 TJ = - 40C 10 25C 14 12 10 8 6 4 2 2 0 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 22 16 VCE = 600V I C = 12A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
8
6
4
0
IC - Amperes
VGE - Volts
125C
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
28 24 20 1,000
Fig. 10. Capacitance
Cies
Capacitance - PicoFarads
IC - Amperes
100 Coes
16 12 8 TJ = 125C 4 0 200 RG = 10 dv / dt < 10V / ns
10 Cres
f = 1 MHz
1 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 40
300
400
VCE - Volts
10.00 www..net
Fig. 11. Maximum Transient Thermal Impedance
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
3.00
aaaaaa
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA12N120A3 IXGP12N120A3 IXGH12N120A3
Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature
240 220 200 I 180 160 I 140 120 100 25 35 45 55 65 75 85 95 105 115 125
C = 12A C
Fig. 13. Resistive Turn-on Rise Time vs. Collector Current
240 RG = 10 , VGE = 15V VCE = 960V
RG = 10 , VGE = 15V VCE = 960V
220 200 180 160 140 120 100 6
t r - Nanoseconds
t r - Nanoseconds
= 24A
TJ = 125C
TJ = 25C
8
10
12
14
16
18
20
22
24
TJ - Degrees Centigrade
IC - Amperes
Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance
260 140 1600 1500 1400
Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature
100
tr
240 VCE = 960V
td(on) - - - 120
tf
VCE = 960V
td(off) - - - -
TJ = 125C, VGE = 15V
RG = 10, VGE = 15V
90 80 70
t d(off) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
220
100
t f - Nanoseconds
1300 I C = 12A 1200 1100 1000 900 I C = 24A
200
I C = 24A I
C
80 = 12A 60
60 50 40 30 20 125
180
160
40
140 0 30 60 90 120 150 180 210 240 270
20 300
800 25 35 45 55 65 75 85 95 105 115
RG - Ohms
www..net
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times vs. Collector Current
2200 2000 1800 110 1800 1700 1600
Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance
700
tf
VCE = 960V TJ = 125C
td(off) - - - -
100 90 80 70
tf
VCE = 960V
td(off) - - - -
RG = 10, VGE = 15V
TJ = 125C, VGE = 15V
600
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
I
1600 1400 1200 1000 800 600 6 8 10 TJ = 25C
C
= 12A
500 400 300 I C = 24A 200 100 0 300
1500 1400 1300 1200 1100 0 30 60 90 120 150 180 210 240 270
60 50 40 30 12 14 16 18 20 22 24
IC - Amperes
RG - Ohms
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_12N120A3(2M)02-11-10

▲Up To Search▲

Price & Availability of IXGA12N120A3

	To Download IXGA12N120A3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .