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Voltage Variable Absorptive Attenuator, 30 dB 0.5 - 2 GHz AT-110 V 2.00 Features q q q q q q q q SO-8 Single Positive Voltage Control 0 to +5 Volts 30 dB Voltage Variable Attenuation 2 dB Linearity from BSL Low DC Power Consumption Temperature Range: -40C to +85C Low-Cost SOIC 8 Plastic Package Tape and Reel Packaging Available Fast Switching Speed Description M/A-COM's AT-110 is a linear GaAs MMIC voltage variable absorptive attenuator in a low-cost SOIC 8-lead surface mount plastic package. The AT-110 has a faster switching speed than the AT-108 or AT-109. The AT-110 is ideally suited for use where linear attenuation fine tuning and very low power comsumption are required. Typical applications include radio, cellular, GPS equipment and automatic gain/level control circuits. The AT-110 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. Ordering Information Part Number AT-110 AT-110TR AT-110RTR Package SOIC 8-Lead Plastic Package Forward Tape & Reel* Reverse Tape & Reel* * If specific reel size is required, consult factory for part number assignment. Typical Electrical Specifications 1, TA = +25C Parameter Insertion Loss Attenuation Flatness (Peak-to-Peak) VSWR Trise, Tfall Ton, Toff Transients 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, Control to 10% RF In-band S S mV Test Conditions 0.5 - 1.0 GHz 1.0 - 2.0 GHz 0.5 - 16 GHz 1.0 - 26 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz Units dB dB dB dB dB dB Min. Typ. 2.8 3.3 Max. 3.0 3.6 30 25 0.5 1.2 2:1 0.2 0.2 70 0.8 1.5 1. All measurements at 1 GHz in a 50- system, unless otherwise specified.The RF ports must be blocked outside of the package from ground or any other voltage. Voltage Variable Absorptive Attenuator, 30 dB AT-110 V 2.00 Absolute Maximum Ratings 1 Parameter Maximum Input Power Supply Voltage VCC Control Voltage VC Operating Temperature Storage Temperature Functional Schematic Absolute Maximum +21 dBm -1 V, +8 V -1 V, VCC +0.5 V -40C to +85C -65C to +150C 1. Operation of this device above any one of these parameters may cause permanent damage. Typical Performance RELATIVE ATTENUATION @ +25C, F = 1800 MHz 0 -5 -10 -15 -20 -25 vs V CC = +5 VDC 0.5 VDC @ 300 A max. VC = 0 VDC to +5 VDC @ 6 mA max. External DC blocking capacitors are required on all RF ports. CONTROL VOLTAGE INSERTION LOSS 4.0 vs FREQUENCY 3.0 2.0 1.0 -30 -35 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 CONTROL VOLTAGE (VOLTS) FREQUENCY (GHz) ATTENUATION vs CONTROL VOLTAGE @ +25C, F = 900 MHz 0 3 ATTENUATION vs TEMPERATURE, NORMALIZED TO +25C, F = 900 MHz -40C -10 2 1 +85C -20 0 -1 -2 -30 -40 5 4 3 2 1 0 -3 5 4 3 2 1 0 CONTROL VOLTAGE (VOLTS) CONTROL VOLTAGE (VOLTS) Voltage Variable Absorptive Attenuator, 30 dB AT-110 V 2.00 RETURN LOSS vs CONTROL VOLTAGE @ +25C, F = 900 MHz 0 -5 -10 -15 15 -20 -25 -30 -35 5 4 3 2 1 0 10 5 0 30 25 20 1dB COMPRESSION vs CONTROL VOLTAGE @ +25C, F = 900 MHz 5 4 3 2 1 0 CONTROL VOLTAGE (VOLTS) CONTROL VOLTAGE (VOLTS) 35 30 25 20 15 10 5 0 IP3 vs CONTROL VOLTAGE 400 MHz 900 MHz 5 4 3 2 1 0 CONTROL VOLTAGE (VOLTS) |
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