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Pb Free Plating Product
ISSUED DATE :2006/12/06 REVISED DATE :
GI405
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 32m -18A
Description
The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Features
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 :
2
Ratings -30 20 -18 -14 -40 60 0.4 61 -35 -55 ~ +175
Unit V V A A A W W/ : mJ A :
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS IAS Tj, Tstg
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit : /W : /W
GI405
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ISSUED DATE :2006/12/06 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : )
Symbol BVDSS VGS(th) gfs IGSS IDSS
Min. -30 -1.2 -
Typ. 17 18.7 2.54 5.4 9 25 20 12 920 190 122
Max. -2.4 100 -1 -5 32 60 23 13 1100 -
Unit V V S nA uA uA m
Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-18A VGS= 20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A ID=-18A VDS=-15V VGS=-10V VDS=-15V VGS=-10V RG=3 RL=0.82 VGS=0V VDS=-15V f=1.0MHz
Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage3
Continuous Source Current (Body Diode)
Symbol VSD IS Trr Qrr
Min. -
Typ. 21.4 13
Max. -1.0 -18 -
Unit V A ns nC
Test Conditions IS=-1A, VGS=0V VD= VG=0V, VS=-1.0V IS=-18A, VGS=0V dI/dt=100A/ s
Reverse Recovery Time
3
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%.
GI405
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ISSUED DATE :2006/12/06 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain Current and Gate Voltage
10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001
Fig 4. On-Resistance v.s. Junction Temperature
Fig 5. On-Resistance v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GI405
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ISSUED DATE :2006/12/06 REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating Junction-to-Ambient
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI405
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