View SGW10N60_162606.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGP10N60
www..com
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
C
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
G
E
Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter
VCE 600V
IC 10A
VCE(sat) 2.2V
Tj 150C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234
Symbol VCE IC
Value 600 21 10.9
Unit V A
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature
1)
ICpul s VGE EAS
42 42 20 70 V mJ
tSC Ptot Tj , Tstg
10 104 -55...+150
s W C
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
Symbol Conditions Max. Value Unit
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB
1.2 62 40 40
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2 2.2 4 6.7 580 70 50 64 7 13 100 max. 2.4 2.7 5
Unit
V
A 40 1500 100 696 84 60 83 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Mar-00
1)
2
SGP10N60
www..com
SGB10N60, SGW10N60
Symbol Conditions Value min. typ. 29 21 233 49 0.20 0.17 0.370 max. 35 25 280 59 0.230 0.221 0.451 mJ Unit
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 , Energy losses include "tail" and diode reverse recovery. ns
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Energy losses include "tail" and diode reverse recovery. 29 21 266 63 0.297 0.28 0.577 35 25 319 76 0.342 0.364 0.706 mJ ns Symbol Conditions Value min. typ. max. Unit
3
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
Ic
t p =5 s
50A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
40A
10A
15 s
30A
50 s
T C =80C
20A T C =110C 10A
200 s 1A 1ms
Ic
DC 0.1A
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
120W
25A
100W
20A
80W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
15A
60W
10A
40W
20W
5A
0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
35A 30A 25A VGE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
35A 30A 25A VGE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
30A 25A 20A 15A 10A 5A 0A 0V
T j=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
35A
4.0V
3.5V
IC = 20A
3.0V
IC, COLLECTOR CURRENT
2.5V
IC = 10A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
t d(off)
t d(off)
t, SWITCHING TIMES
tf 100ns
t, SWITCHING TIMES
100ns tf td(on)
td(on)
tr tr 10ns 0A 10ns 0
5A
10A
15A
20A
25A
20
40
60
80
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A)
5.5V
t d(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
t, SWITCHING TIMES
100ns tf t d (on)
tr 10ns 0C
min.
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
6
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
1.0mJ
*) Eon and Ets include losses due to diode recovery.
1.6mJ 1.4mJ
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
1.2mJ 1.0mJ 0.8mJ E on * 0.6mJ E off 0.4mJ 0.2mJ 0.0mJ 0A
E, SWITCHING ENERGY LOSSES
E ts *
0.8mJ
0.6mJ
E ts*
0.4mJ E off 0.2mJ E on *
5A
10A
15A
20A
25A
0.0mJ 0
20
40
60
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A)
0.8mJ
*) Eon and Ets include losses due to diode recovery.
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
10 K/W
D=0.5 0.2 0.1
E, SWITCHING ENERGY LOSSES
0.6mJ
E ts * 0.4mJ
10 K/W
-1
0.05 0.02 0.01
R,(K/W) 0.39 0.403 0.2972 0.1098
R1
E on * 0.2mJ E off 0.0mJ 0C
10 K/W
-2
, (s)= 0.0981 1.71*10-2 1.04*10-3 1.37*10-4
R2
single pulse
50C
100C
150C
10 K/W 1s
-3
C 1 = 1 / R 1 C 2 = 2 /R 2
10s 100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
1nF
25V
20V
C iss
VGE, GATE-EMITTER VOLTAGE
15V 120V 480V
C, CAPACITANCE
100pF
C oss
10V
5V
C rss
0V 0nC
25nC
50nC
75nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
200A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
tsc, SHORT CIRCUIT WITHSTAND TIME
150A
15 s
100A
10 s
50A
5 s
0 s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
TO-220AB
symbol dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 min
[inch] max 0.4016 0.0512 0.0630 0.0421
A B C D E F G H K L M N P Q R S T U V W X Y Z
9.80 0.70 1.00 1.03
0.3858 0.0276 0.0394 0.0406
2.54 typ. 0.65 0.85
0.1 typ. 0.0256 0.0335
5.08 typ. 4.30 1.17 9.05 2.30 4.50 1.37 9.45 2.50
0.2 typ. 0.1693 0.0461 0.3563 0.0906 0.1772 0.0539 0.3720 0.0984
15 typ. 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 0.20 5.20 3.00 0.60
0.5906 typ. 0.0000 0.1654 0.0945 0.0157 0.0079 0.2047 0.1181 0.0236
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
9
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
TO-247AC
symbol dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
10
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
11
Mar-00
SGP10N60
www..com
SGB10N60, SGW10N60
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Mar-00

▲Up To Search▲

Price & Availability of SGW10N60

	To Download SGW10N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .