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Pb Free Plating Product
CORPORATION
G6401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B
BVDSS RDS(ON) ID
50m -4.3A
-12V
The G6401 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G6401 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features & Low RDS(ON) Ultra
Applications & Power Management in Notebook Computer
&Portable Equipment &Battery Powered System. &Fast Switching &1.8V Gate Rated
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings -12 f8 -4.3 -3.4 -12 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B
Unless otherwise specified)
Min. -12 Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. -1.0 D 100 -1 -25 50 85 125 24 1580 pF ns nC mL Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS= VGS, ID=-250uA VDS=-5.0V, ID=-4.0A VGS= D 8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 VGS=-4.5V, ID=-4.3A VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-2.0A ID=-4.0A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A VGS=-10V RG=3.3 L RD=10 L VGS=0V VDS=-15V f=1.0MHz
Symbol BVDSS BVDSS/ Tj VGS(th)
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
gfs
IGSS IDSS
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Forward On Voltage2 Reverse Recovery Time
2
VSD Trr Qrr
-
39 26
-1.2 -
V ns nC
IS=-1.2A, VGS =0 IS=-4.0A, VGS =0 dI/dt=100A/us
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on min. copper pad.
Characteristics Curve
2/4
CORPORATION
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B
3/4
CORPORATION
ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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