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| JECF 1 I-DE SiC Photodiode CHARACTERISTICS Spectral response according to erythema (CIE 87) Active area 1 mm2 TO-5 package sensor isolated to package Integrated diffuser, cos-response characteristic APPLICATIONS Measurement of erythema effective UV - part of sun- or UV-lamp radiation MAXIMUM RATINGS Maximum reverse voltage Operating temperature range Storage temperature range Soldering temperature (3s) 20 -25 to 70 -40 to 100 260 V C C C TECHNICAL DATA Common test conditions, if not otherwise specified: a = 25C, VR = 0V Parameter Sensitive area Maximum of spectral responsivity Absolute spectral responsivity Dark current IR Capacitance Test conditions S = Smax = 285nm VR = 1V 1.1 Min. Typ. O 3.3 285 1.75 10 195 2.1 Max. Unit mm nm mV/nW fA pF Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (800)347-5445 or (617)566-3821 * fax (617)731-0935 * boselec@boselec.com * www.boselec.com 10 Relative Response 1 0.1 0.01 0.001 0.0001 Erythemal Response of JECF 1 I-DE Erythemal Ideal JECF 1 I-DE 0.00001 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 Wavelength, nm 400 Package Dimensions Available On Request. Internal Circuit The application example shows a typical circuit. Rf is responsible for the gain of the circuit. Cf compensates the reverse junction capacitance of the photodiode and input capacitance of the OPV. The exact value of Cf depends on Rf, used OPV, and capacitance of the circuit. A typical value is 1pF. The diagram shows dependence of amplitude of the application circuit with OPA 111, Rf = 50M, and Cf = 0.5pF. Boston Electronics Corporation, 91 Boylston Street, Brookline MA 02445 (800)347-5445 or (617)566-3821 * fax (617)731-0935 * boselec@boselec.com * www.boselec.com |
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