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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card
Connector Type
Two- piece 68-pin
MF365A-LCDATXX MF365A-LSDATXX MF3129-LCDATXX MF3129-LSDATXX MF3257-LCDATXX MF3257-LSDATXX MF3513-LCDATXX MF3513-LSDATXX MF31M1-LCDATXX MF31M1-LSDATXX MF32M1-LCDATXX MF32M1-LSDATXX MF34M1-LCDATXX MF34M1-LSDATXX
Electrostatic discharge protectiton to 15kV Buffered interface 68-pin connector 8-bit and 16-bit data width Write protect switch Battery voltage pin LS Type Wide Range operating temperature Ta= -20 to 70C
DESCRIPTION Mitsubishi's Static RAM cards provide large memory capacities on a device approximately the size of a credit card(85.6mmx54mmx3.3mm). T h e c a r d s u s e a 8 / 1 6 bit data bus.The devices use a replaceable lithium battery to maintain data. Available in 64K byte-4M byte capacities, Mitsubishi's Static RAM cards are available with a 68-pin, two-piece connector. FEATURES Uses TSOP (Thin Small Outline Package) to achieve very high memory density coupled with high reliability, without enlarging card size PRODUCT LIST
Item Type name MF365A-LCDATXX MF3129-LCDATXX MF3257-LCDATXX MF3513-LCDATXX MF31M1-LCDATXX MF32M1-LCDATXX MF34M1-LCDATXX MF365A-LSDATXX MF3129-LSDATXX MF3257-LSDATXX MF3513-LSDATXX MF31M1-LSDATXX MF32M1-LSDATXX MF34M1-LSDATXX Memory capacity 64KB 128KB 256KB 512KB 1MB 2MB 4MB 64KB 128KB 256KB 512KB 1MB 2MB 4MB 8/16 NO Data Bus width(bits) Attribute memory
APPLICATIONS Office automation Computers Telecommunications
Data Communications Industrial Consumer
Auxialiary battery
Memory organization 256K bit SRAMx2 256K bit SRAMx4 1M bit SRAMx2 1M bit SRAMx4 1M bit SRAMx8 1 M b i t S R A M x 16
Outline drawing
Main battery holder
NO
4M bit SRAMx8 256K bit SRAMx2 256K bit SRAMx4 1M bit SRAMx2 1M bit SRAMx4 1M bit SRAMx8 1 M b i t S R A M x 16 4M bit SRAMx8
68P-003
Screw type
MITSUBISHI ELECTRIC 1/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PIN ASSIGNMENT T w o - P i e c e T y p e (68-pin)
Pin Symbol No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 GND D3 D4 D5 D6 D7 CE1# A10 OE# A11 A9 A8 A13 A14 WE# NC VCC NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP GND Ground Pin No. 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 GND
CD1#
Function
Symbol Ground Card detect 1
Function
Data I/O
Card enable 1 Address input Output enable
Address input
Write enable No connection Power supply voltage No connection A16(NC for 64KB type)
Address input
D11 D12 D13 D14 D15 CE2# NC NC NC A17 A18 A19 A20 A21 VCC NC NC NC NC NC NC NC NC NC
REG#
Data I/O
Card enable 2 No connection A17(NC for128KB types) A18(NC for256KB types) A19(NC for512KB types) A20(NC for1MB types) A21(NC for2MB types) Power supply voltage No connection No connection
Address input
No connection
Data I/O Write protect Ground
BVD2 BVD1 D8 D9 D10
CD2#
REG function Battery voltage detect 2 Battery voltage detect 1 Data I/O Card detect 2 Ground
GND
WRITE PROTECT MODE (WP) When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, the WP pin becomes "H" level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates "L" level).
MITSUBISHI ELECTRIC 2/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BLOCK DIAGRAM (4MB)
A21 A20 A0 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1
ADDRESSDECODER
8
CS# COMMON MEMORY
ADDRESSBUS BUFFERS
19
16 DATA-BUS BUFFERS
4Mbit SRAMx8
OE#
WE#
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
CE1# CE2# WE# OE# REG# WP# WRITE PROTECT
OFF ON
MODE CONTROL LOGIC TO INTERNAL POWER VOLTAGE DETECTOR & POWER CONTROLLER GND BR2325 VCC BVD2 BVD1
CD1# CD2#
FUNCTION TABLE
Mode Standby Read A (16bit) common Write A (16bit) common Read B (8bit) common Write B (8bit) common Read C (8bit) common Write C (8bit) common Output disable Read A (16bit) attribute Read B (8bit) attribute Read C (8bit) attribute
REG# CE1# CE2# OE# WE# A0
X H H H H H H H H X L L L L
H L L L L L L H H X L L L H
H L L H H H H L L X L H H L
X L H L L H H L H H L L L L
X H L H H L L H L H H H H H
X X X L H L H X X X X L H X
I/O (D15~D8) High-impedance Odd Byte Data out Odd Byte Data in High-impedance High-impedance High-impedance High-impedance Odd Byte Data out Odd Byte Data in High-impedance Data out (unknown) High-impedance High-impedance Data out (unknown)
I/O (D7~D0) High-impedance Even Byte Data out Even Byte Data in Even Byte Data out Odd Byte Data out Even Byte Data in Odd Byte Data in High-impedance High-impedance High-impedance Data out (FFh) Data out (FFh) Data out (unknown) High-impedance
ICC Standby Active Active Active Active Active Active Active Active Active Active Active Active Active
Note 1 : H=VI H , L=VIL, X=VI H or VI L
MITSUBISHI ELECTRIC 3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS Symbol VC C Vi Vo T opr1 T opr2 T stg Parameter Supply voltage Input voltage Output voltage Operating temperature 1 Operating temperature 2 Storage temperature Conditions With respect to GND Read, Write, Operation Data retention Ratings -0.3~6.0 -0.3~VC C +0.3 0~VC C LC series 0~70 LS series -20~70 LC series 0~70 LS series -20~70 -30~80 Unit V V V C C C C C
R E C O M M E N D E D O P E R A T I N G C O N D I T I O N S (LC series Ta= 0~55C, unless otherwise noted) (LS series Ta=-20~70C, unless otherwise noted) Limits Parameter Symbol Unit Min. Typ. Max. VC C VC C Supply voltage 4.50 5.0 5.25 V GND System ground 0 V VI H High input voltage 3.5 VC C V VI L Low input voltage 0 0.8 V
MITSUBISHI ELECTRIC 4/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
E L E C T R I C A L C H A R A C T E R I S T I C S ( L C s e r i e s T a = 0 ~ 5 5 C , V CC= 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d ) Symbol
VOH VOL IIH IIL IOZH IOZL
Parameter
High output voltage Low output voltage High input current
Low input current
High output current in off state Low output current in off state
ICC 1 * 1
Active supply current 1
ICC 1 * 2
Active supply current 2
ICC 2 * 1
Standby supply current 1
ICC 2 * 2 VBDET1 VBDET2
Standby supply current 2 Battery detect reference voltage 1 Battery detect reference voltage 2
( L S s e r i e s T a = - 2 0 ~ 7 0 C , V CC= 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d ) Limits Test conditions Unit M i n . Typ. Max. IOH= - 1 . 0 m A 2.4 V IOL= 1 m A 0.4 V VI=VCC V 10 A VI =0V CE1#, CE2#, WE#, OE#, REG# -10 -70 A Other inputs -10 C E 1 # = C E 2 # = V IH o r O E # = V IH W E # = V IH, 10 A VO=VCC C E 1 # = C E 2 # = V IH o r O E # = V IH W E # = V IH, -10 A VO= 0 V 64KB~1MB 16bit 150 C E 1 # = C E 2 # = V IL 8bit 110 O t h e r i n p u t s V IH o r V IL 2MB 16bit 160 mA Outputs=open 8bit 120 Cycle time=250ns 4MB 16bit 200 8bit 160 64KB~1MB 16bit 140 CE1#=CE2# 0.2V 8bit 100 Other inputs 0.2V or 2MB 16bit 150 mA VCC-0.2V 8bit 110 Outputs=open 4MB 16bit 190 Cycle time=250ns 8bit 150 C E 1 # = C E 2 # = V IH 10 mA O t h e r i n p u t s = V IH o r V IL C E 1 # = C E 2 # VCC- 0 . 2 V 64KB,128KB 0.15 0.30 Other inputs 0.2V or 256KB~1MB 0.15 0.45 mA VCC- 0 . 2 V 2MB,4MB 0.30 0.65 Vcc=5V,Ta=25C V 2.37 2.47 2.27 Vcc=5V,Ta=25C 2.55 2.65 2.75 V
Note 2 : Currents flowing into the IC are taken as positive (unsigned). 3 : Typical values are measured at VC C = 5 V , T a = 2 5 C . Pin asserted when battery voltage drops below specified level.
MITSUBISHI ELECTRIC 5/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CAPACITANCE
Symbol
CI
Parameter
Input capacitance
Test conditions
64KB~2MB 4MB 64KB~2MB 4MB
Min.
Limits Typ.
VI =GND, VI =25mVrms f=1 MHZ, T a = 2 5 C CO Output capacitance VO =GND, VO =25mVrms, f=1 MHZ, T a = 2 5 C Note 4 : These parameters are not 100% tested.
Max. 45 30 45 20
Unit
pF pF
SWITCHING CHARACTERISTICS R e a d C y c l e (LC series Ta= 0~55C, VC C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70C, VC C =4.50~5.25V, unless otherwise noted) Limits Min. Typ. Symbol Parameter tC R ta (A) ta (CE) ta (OE) tdis(CE) tdis(OE) te n (CE) te n (OE) tV (A) Read cycle time Address access time Card enable access time Output enable accese time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time (after address change) 5 5 0 200
Max. 200 200 100 90 90
Unit
ns ns ns ns ns ns ns ns ns
TIMING REQUIREMENTS W r i t e C y c l e (LC series Ta= 0~55C, VC C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70C, VC C =4.50~5.25V, unless otherwise noted)
Symbol
tC W tw ( W E ) ts u ( A ) ts u ( A - W E H ) ts u ( C E - W E H ) ts u ( D - W E H ) th ( D ) tr e c ( W E ) tdis(WE) tdis(OE) te n ( W E ) te n ( O E ) ts u ( O E - W E ) th(OE-WE) Write cycle time Write pulse width Address set up time
Parameter
Min. 200 120 20 140 140 60 30 30
Limits Typ.
Max.
Unit
ns ns ns ns ns ns ns ns
Address set up time with respect to WE# high Card enable set up time with respect to WE# high Data set up time with respect to WE# high Data hold time Write recovery time Output disable time (from WE#) Output disable time (from OE#) Output enable time (from WE#) Output enable time (from OE#) OE# set up time with respect to WE# low OE# hold time with respect to WE# high
90 90 5 5 10 10
ns ns ns ns ns ns
MITSUBISHI ELECTRIC 6/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM Read Cycle tCR
An
VIH
VIL VIH CE# VIL
ten(CE) tdis(CE) ta(OE) ta(A) ta(CE) tV(A)
VIH OE# VIL
ten(OE)
tdis(OE)
VOH Dm (DOUT) VOL
WE#="H" level REG#="H" level
Hi-Z
OUTPUT VALID
Note 5 :
Indicates the don't care input
W r i t e C y c l e (WE# control)
tCW
VIH An VIL VIH CE# VIL VIH OE# VIL VIH WE# VIL tSU(OE-WE) Dm (DIN) VIH
Hi-Z tSU(D-WEH) th(D) th(OE-WE) tSU(A) tW(WE) trec(WE) tSU(A-WEH) tSU(CE-WEH)
VIL
tdis(OE)
DATA INPUT STABLE
tdis(WE) Hi-Z ten(OE) ten(WE)
VOH Dm (DOUT) VOL
REG#="H" level
MITSUBISHI ELECTRIC 7/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
W r i t e C y c l e (CE# control) tCW
VIH An VIL
tSU(A) tSU(CE-WEH) trec(WE)
VIH CE# VIL VIH WE# VIL
tSU(D-WEH) th(D)
Dm (DIN)
VIH VIL
Hi-Z
DATA INPUT STABLE
OE#="H" level REG#="H" level
SWITCHING CHARACTERISTICS (Attribute) R e a d C y c l e (LC series Ta= 0~55C, VC C =4.50~5.25V, unless otherwise noted) (LS series Ta=-20~70C, VC C =4.50~5.25V, unless otherwise noted) Symbol tC R R ta ( A ) R ta ( C E ) R ta ( O E ) R tdis(CE)R tdis(OE)R te n ( C E ) R te n ( O E ) R tV ( A ) R Parameter Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change Min. 300 Limits Typ. Max. 300 300 150 100 100 5 5 0 Unit ns ns ns ns ns ns ns ns ns
MITSUBISHI ELECTRIC 8/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
TIMING DIAGRAM (Attribute) Read Cycle tCRR
An
VIH
VIL VIH CE# VIL
ta(A)R ta(CE)R
tV(A)R
ten(CE)R
tdis(CE)R ta(OE)R
VIH OE# VIL
ten(OE)R
tdis(OE)R
VOH Dm (DOUT) VOL
WE#="H" level REG#="L" level
Hi-Z
OUTPUT VALID
Note 6 : Test Conditions Input pulse levels : VI L =0.4V, VIH=4.0V Input p u l s e r i s e , f a l l t i m e : t r = t f = 1 0 n s Reference voltage Input : VI L = 0 . 8 V , V I H = 3 . 5 V Output : VOL=0.8V, VOH=3.0V (ten and tdis are measured when output voltage is 500mV from steady state. ) Load : 100pF+1 TTL gate 5pF+1 TTL gate (at ten and tdis measuring) 7 : Writing is executed in overlap of CE# and WE# are "L" level. (only for Common Memory) 8 : Don't apply inverted phase signal externally when Dm pin is in output mode. 9 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#="H" level Read C/Write C : CE#=CE2#, CE1#="H" level
MITSUBISHI ELECTRIC 9/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ELECTRICAL CHARACTERISTICS B A T T E R Y B A C K U P (LC series Ta= 0~55C, unless otherwise noted) (LS series Ta=-20~70C, unless otherwise noted)
Symbol VBATT VI(CE) Parameter Back-up enable battery voltage Card enable voltage Test Conditions All pins open 2 . 4 V VCC5 . 2 5 V 0VVCC<2 . 4 V 64KB 128KB All pins open, 256KB VBATT= 3 V , 512KB Ta=25C 1MB 2MB 4MB 64KB 128KB 256KB All pins open, 512KB VBATT= 3 V 1MB 2MB 4MB Min. 2.6 2.4 VCC- 0 . 1 Limits Typ. Max. Unit V V
VCC
ICC(BUP)
Battery back-up supply current
ICC(BUP)
Battery back-up supply current
VCC+0.1 3 5 3 5 9 17 9 40 70 100 200 400 800 400
A
A
T I M I N G R E Q U I R E M E N T S (LC series Ta= 0~55C, unless otherwise noted) (LS series Ta=-20~70C, unless otherwise noted)
Symbol Parameter
tpr tpf ts u ( V C C ) tr e c ( V C C )
Power supply rise time Power supply fall time Set up time at power on Recovery time at power off
Min. 0.1 3 20 1000
Limits Typ.
Max. 300 300
Unit
ms ms ms ns
MITSUBISHI ELECTRIC 10/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CARD INSERTION/REMOVAL TIMING DIAGRAM
VCC M I N m e a n s M i n i m u m O p e r a t i n g V o l t a g e = 4 . 7 5 V .
VCC
VCC MIN trec(VCC)
tpf 90%
VIH VIH
tpr 90% 10% 10% VCC MIN tsu(VCC)
VCC
CE1#, CE2#
CE1, CE2
Note 10: When the card is holding valuable data, the battery must not be removed unless VC C is present.
BATTERY SPECIFICATIONS A replaceable battery (type BR2325) with a capacity of 165mAH is used: Estimated battery life when the card is left continuously. MF365A-LC/LSDATXX MF3129-LC/LSDATXX MF3257-LC/LSDATXX MF3513-LC/LSDATXX MF31M1-LC/LSDATXX MF32M1-LC/LSDATXX MF34M1-LC/LSDATXX Conditions Temperature : 25 C Humidity : 60%RH 5.9years 3.6years 5.9years 3.6years 2.0years 1.1years 2.0years
MITSUBISHI ELECTRIC 11/11

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