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UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 6.3@VGS = 10V * Ultra Low gate charge (typical 8.1nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Package Lead Free Halogen Free 2N70L-TA3-T 2N70G-TA3-T TO-220 2N70L-TF1-T 2N70G-TF1-T TO-220F1 2N70L-TF3-T 2N70G-TF3-T TO-220F 2N70L-TM3-T 2N70G-TM3-T TO-251 2N70L-TN3-R 2N70G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N70L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel
(1) R: Tape Reel, T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F, (2) TM3: TO-251, TN3:TO-252 (3) G: Halogen Free, L: Lead Free
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ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy 2.8 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 45 W Power Dissipation PD TO-220F/TO-220F1 28 W TO-251/TO-252 30 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=45mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD2.0A, di/dt200A/s, VDD BVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER TO-220/TO-220F/TO-220F1 Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-220F/TO-220F1 TO-251/TO-252 SYMBOL JA Jc RATINGS 62.5 110 2.76 4.46 4.24 UNIT /W /W /W /W /W
ELECTRICAL CHARACTERISTICS (TJ =25, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250A VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN TYP MAX UNIT 700 10 100 -100 0.4 2.0 5.0 270 38 5 4.0 6.3 350 50 7 V A nA nA V/ V pF pF pF
Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
BVDSS/TJ ID = 250 A, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250A VGS = 10V, ID =1A
VDS =25V, VGS =0V, f =1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =350V, ID =2.0A, RG=25 (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=560V, VGS=10V, ID=2.0A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS = 0 V, ISD = 2.0A di/dt = 100 A/s (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT 30 80 50 70 11 ns ns ns ns nC nC nC V A A ns C
8.1 1.7 4.4
1.4 2.0 8.0 260 1.09
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www.unisonic.com.tw
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TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
VDS
90%
VGS
10%
tD(ON) tR tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS QG
10V QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
E AS =
1 BVDSS LI 2 2 AS BVDSS - VDD
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, ID (A)
Drain Current, ID (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, ID (A)
Drain Current, ID (A)
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