View 3N60L-X-TA3-T_265331.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UNISONIC TECHNOLOGIES CO., LTD 3N60
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 3.6 @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 3N60L Halogen-free: 3N60G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal 3N60-x-TA3-T 3N60-x-TF1-T 3N60-x-TF3-T 3N60-x-TM3-R 3N60-x-TN3-R Ordering Number Lead Free 3N60L-X-TA3-T 3N60L-x-TF1-T 3N60L-x-TF3-T 3N60L-x-TM3-R 3N60L-x-TN3-R Halogen Free 3N60G-x-TA3-T 3N60G-x-TF1-T 3N60G-x-TF3-T 3N60G-x-TM3-R 3N60G-x-TN3-R Package TO-220 TO-220F1 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel
3N60L-X-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating
(1) R: Tape Reel, T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF3: TO-22F, TM3: TO-251, TN3: TO-252 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd
1 of 8 QW-R502-110,F
3N60
ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
PARAMETER SYMBOL 3N60-A 3N60-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 1) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 1) IDM 12 A Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy Repetitive (Note 1) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 75 Power Dissipation PD W TO-220F/TO-220F1 34 TO-251/TO-252 50 Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER TO-220 Junction-to-Ambient TO-220F/TO-220F1 TO-251/TO-252 TO-220 Junction-to-Case TO-220F/TO-220F1 TO-251/TO-252 SYMBOL JA RATING 62.5 62.5 110 1.67 3.68 2.5 UNIT C/W
JC
C/W
ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 3N60-A 3N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.6 2.0 2.8 350 50 5.5 4.0 3.6 450 65 7.5 MIN TYP MAX UNIT 600 650 10 100 -100 V V A nA nA V/ V pF pF pF
Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
BVDSS/TJ ID = 250 A, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5A
VDS = 25 V, VGS = 0 V, f = 1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8 QW-R502-110,F
3N60
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
SWITCHING CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Turn-On Delay Time tD(ON) 10 30 ns Turn-On Rise Time tR 30 70 ns VDD = 300V, ID = 3.0 A, RG = 25 (Note 4, 5) Turn-Off Delay Time tD(OFF) 20 50 ns 30 70 ns Turn-Off Fall Time tF Total Gate Charge QG 10 13 nC VDS= 480V,ID= 3.0A, VGS= 10 V Gate-Source Charge QGS 2.7 nC (Note 4, 5) 4.9 nC Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Maximum Continuous Drain-Source Diode IS 3.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 12 A Forward Current Reverse Recovery Time tRR 210 ns VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR 1.2 C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8 QW-R502-110,F
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8 QW-R502-110,F
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8 QW-R502-110,F
3N60
TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 4 3 2 1
Note: TJ=25
On State Current vs. Allowable Case Temperature 10 Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) ()
VGS=20V VGS=10V
1
0
0
2
4
6
8
10
12
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Notes: 1. VGS=0V 2. 250s Test 1.4 1.6 1.8
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8 QW-R502-110,F
3N60
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Transient Thermal Response Curve 1
D=0.5
3.0 2.5 2.0 1.5 1.0
Notes: 1. JC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDMxJC (t)
Maximum Drain Current vs. Case Temperature
0.2 0.1 0.05 0.02 0.01 Single Pulse
0.1
0.5 0 25 50 75 100 125 Case Temperature, TC ( ) Safe Operating Area - 650V for 3N60-B
Operation in This Area is Limited by RDS(on)
0.01 10-5
10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Safe Operating Area - 600V for 3N60-A
Operation in This Area is Limited by RDS(on)
150
101
100s 1ms
101
100s 1ms
100
DC Notes: 1. TJ=25 2. TJ=150 3. Single Pulse
10ms
100
DC Notes: 1. TJ=25 2. TJ=150 3. Single Pulse
10ms
10-1
10-1
10-2 100
101
102
600
103
10-2 100
101
102
650
103
Drain-Source Voltage, VDS (V)
Drain-Source Voltage, VDS (V)
7 of 8 QW-R502-110,F
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8 QW-R502-110,F

▲Up To Search▲

Price & Availability of 3N60L-X-TA3-T

	To Download 3N60L-X-TA3-T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .