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| LED - Chip 21.11.2007 Radiation Red Type Standard Technology AlInGaP/GaAs EL-645-13 rev. 06 Electrodes P (anode) up 265 110 typ. dimensions (m) typ. thickness 260 (20) m cathode gold alloy, 0.5 m anode gold alloy, 1.5 m Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power Radiant power 1 2 Symbol Min Typ Max Unit IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VR e e v v P D 0.5 tr, tf 635 40 5 1.2 1.9 2.0 4.0 70 140 645 632 18 15 2.3 V V mW mW mcd mcd Luminous intensity1 Luminous intensity2 Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time 1 2 655 nm nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-645-13 Lot N V(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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