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High-Gain IGBT w/ Diode High-Speed PT Trench IGBT IXGH24N60C4D1 VCES IC110 VCE(sat) tfi(typ) TO-247 AD = = = 600V 24A 2.70V 68ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC TC TC TC = 25C = 110C = 110C = 25C, 1ms Maximum Ratings 600 600 20 30 56 24 18 130 ICM = 48 @ VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C C C Nm/lb.in. g Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts G C E Tab C = Collector Tab = Collector G = Gate E = Emitter Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages High Power Density Low Gate Drive Requirement VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque 300 260 1.13/10 6 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = IC110, VGE = 15V, Note 1 TJ = 125C VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 4.0 6.5 V 10 A 1.5 mA 100 2.28 1.95 2.70 nA V V (c) 2011 IXYS CORPORATION, All Rights Reserved DS100254B(04/11) IXGH24N60C4D1 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 10 17 875 86 28 64 IC = IC110, VGE = 15V, VCE = 0.5 * VCES 7 28 Inductive Load, TJ = 25C IC = IC110, VGE = 15V VCE = 360V, RG = 10 Note 2 21 33 0.40 143 68 0.30 20 32 0.63 130 118 0.50 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.65 C/W C/W e TO-247 (IXGH) Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS IC = IC110, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz 1 2 3 P Terminals: 1 - Gate 3 - Emitter 2 - Collector Dim. 0.55 Inductive Load, TJ = 125C IC = IC110, VGE = 15V VCE = 360V, RG = 10 Note 2 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) VF IRM trr RthJC IF = 15A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 2.7 TJ = 150C 1.6 2.6 100 25 V V A ns ns TJ = 100C IF = 15A, VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/s, VR = 30V 1.6 C/W Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGH24N60C4D1 Fig. 1. Output Characteristics @ T J = 25C 50 45 40 35 VGE = 15V 13V 11V 10V 9V Fig. 2. Extended Output Characteristics @ T J = 25C 200 180 160 VGE = 15V 8V 140 14V 13V 12V 11V 10V 9V 8V 7V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 7V IC - Amperes IC - Amperes 120 100 80 60 40 5V 20 0 0 5 10 15 20 25 6V 30 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 125C 50 45 40 35 VGE = 15V 13V 11V 10V Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.3 VGE = 15V 1.2 I = 48A 9V C 8V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 5V 3.5 4 6V 7V VCE(sat) - Normalized 1.1 1.0 I 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 I C C IC - Amperes = 24A = 12A VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 TJ = 25C 4.5 Fig. 6. Input Admittance 60 TJ = - 40C 25C 125C 50 4.0 40 IC - Amperes 11 12 13 14 15 VCE - Volts 3.5 I 3.0 24A 12A 2.0 5 6 7 8 9 10 C 30 = 48A 20 2.5 10 0 3 4 5 6 7 8 9 VGE - Volts VGE - Volts (c) 2011 IXYS CORPORATION, All Rights Reserved IXGH24N60C4D1 Fig. 7. Transconductance 24 TJ = - 40C 25C Fig. 8. Gate Charge 16 14 12 10 8 6 4 VCE = 300V I C = 24A I G = 1mA 20 g f s - Siemens 16 125C 12 8 4 VGE - Volts 55 60 2 0 0 5 10 15 20 25 30 35 40 45 50 0 0 10 20 30 40 50 60 70 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance 10,000 55 Fig. 10. Reverse-Bias Safe Operating Area 50 45 f = 1 MHz Capacitance - PicoFarads 1,000 Cies 40 IC - Amperes 35 30 25 20 15 10 TJ = 125C RG = 10 dv / dt < 10V / ns 100 Coes Cres 10 0 5 10 15 20 25 30 35 40 5 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.00 Z (th)JC - C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGH24N60C4D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.2 2.8 2.4 Eoff VCE = 360V Eon 3.2 1.4 1.2 1 Eoff VCE = 360V Eon Fig. 13. Inductive Switching Energy Loss vs. Collector Current 1.5 --- TJ = 125C , VGE = 15V 2.8 2.4 2 ---- RG = 10 , VGE = 15V 1.3 1.1 Eon - MilliJoules Eoff - MilliJoules 2 1.6 1.2 0.8 0.4 0 10 20 30 40 50 60 70 80 90 I C Eoff - MilliJoules Eon - MilliJoules I C = 48A 0.8 0.6 0.4 0.2 0 12 16 20 24 28 32 36 40 44 48 TJ = 125C 0.9 0.7 0.5 0.3 0.1 1.6 1.2 0.8 = 24A 0.4 0 100 TJ = 25C RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.4 1.2 1 Eoff VCE = 360V Eon 1.7 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 170 160 800 ---1.5 I C = 48A 1.3 tfi VCE = 360V td(off) - - - - RG = 10 , VGE = 15V TJ = 125C, VGE = 15V 700 600 500 t d(off) - Nanoseconds t f i - Nanoseconds Eoff - MilliJoules Eon - MilliJoules 150 140 130 120 110 100 10 20 30 40 50 60 70 80 90 I = 48A I C = 24A 0.8 0.6 0.4 0.2 0 25 35 45 55 65 75 85 95 105 115 1.1 0.9 0.7 0.5 0.3 125 C 400 300 200 100 0 100 I C = 24A TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 180 160 140 180 180 160 140 120 100 I 80 60 40 25 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 170 tfi VCE = 360V td(off) - - - - RG = 10 , VGE = 15V 170 160 150 140 TJ = 25C 130 120 110 100 tfi VCE = 360V td(on) - - - - RG = 10 , VGE = 15V 160 150 140 130 120 110 100 125 t d(off) - Nanoseconds t d(off) - Nanoseconds t f i - Nanoseconds 120 100 80 60 40 20 12 16 20 24 28 32 36 40 44 48 TJ = 125C t f i - Nanoseconds = 48A I C = 24A 35 45 55 65 75 85 95 105 115 IC - Amperes TJ - Degrees Centigrade (c) 2011 IXYS CORPORATION, All Rights Reserved IXGH24N60C4D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 140 120 80 100 90 80 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 32 tri VCE = 360V td(on) - - - - 70 60 I C tri VCE = 360V td(on) - - - - 30 28 TJ = 125C, VGE = 15V RG = 10 , VGE = 15V t d(on) - Nanoseconds t d(on) - Nanoseconds t r i - Nanoseconds 100 80 60 40 20 0 10 20 30 40 50 60 70 80 = 48A t r i - Nanoseconds 70 60 50 40 30 20 TJ = 125C TJ = 25C 26 24 22 20 18 16 14 12 12 16 20 24 28 32 36 40 44 48 50 40 I C = 24A 30 20 10 0 100 10 0 90 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 130 30 tri 110 VCE = 360V td(on) - - - 28 RG = 10 , VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds 90 I 70 C 26 = 48A 24 50 I C = 24A 30 22 20 10 25 35 45 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_24N60C4D1(L2)3-15-10 IXGH24N60C4D1 Fig. 21. Forward Current IF vs. VF Fig. 22. Reverse Recovery Change Qr vs. -diF/dt Fig. 23. Peak Reverse Current IRM vs. -diF/dt Fig. 24. Dynamic Parameters Qr, IRM vs. TVJ Fig. 25. Recovery Time tr vs. -diF/dt Fig. 26. Peak Forward Voltage VFR , tr vs. -diF/dt Fig. 27. Transient Thermal Resistance Junction to Case (c) 2011 IXYS CORPORATION, All Rights Reserved |
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