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| REVISIONS LTR A B C D DESCRIPTION Make change to TABLE I in accordance with N.O.R. 5962-R012-95. Add device type 02. Change boilerplate to radiation hardened format. Make changes to 1.2, 1.2.2, 1.4, TABLE I, Figure 1, and Figure 4. Change ratings values under 1.3 and added 1.5. Editorial changes throughout. -lgt Add appendix A to specify die requirements. -rrp DATE (YR-MO-DA) 94-10-28 96-01-31 99-07-09 00-07-17 APPROVED M.A. Frye M.A. Frye Ray Monnin Ray Monnin REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A D 15 D 16 D 17 D 18 REV SHEET PREPARED BY Greg A. Pitz CHECKED BY Rajesh R. Pithadia D 19 D 20 D 21 D 1 D 22 D 2 D 23 D 3 D 4 D 5 D 6 D 7 D 8 D 9 D 10 D 11 D 12 D 13 D 14 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, CURRENT FEEDBACK AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC SILICON DRAWING APPROVAL DATE 94-08-04 AMSC N/A REVISION LEVEL D SIZE A SHEET CAGE CODE 67268 1 OF 23 5962-94676 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E440-00 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 RHA designator (see 1.2.1) - 94676 01 M P A Federal stock class designator \ Device type (see 1.2.2) / Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 02 Generic number HFA1100 HS1100RH Circuit function Ultra high speed current feedback amplifier Radiation hardened, ultra high speed current feedback amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 Q or V 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter P Descriptive designator GDIP1-T8 or CDIP2-T8 Terminals 8 Package style Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 2 1.3 Absolute maximum ratings. 1/ Voltage between +VS and -VS..................................................................................... 12 V dc Differential input voltage ............................................................................................. 5 V dc Voltage at either input terminal................................................................................... +VS and -VS Output current (50% duty cycle) ................................................................................. 55 mA Maximum package power dissipation at TA = +125C (PD) ........................................ 0.44 W 2/ Junction temperature (TJ) ........................................................................................... +175C Storage temperature range (TSTG) .............................................................................. -65C to +150C Lead temperature (soldering, 10 seconds)................................................................. +300C Thermal resistance, junction-to-case (JC) ................................................................. 30C/W Thermal resistance, junction-to-ambient JA).............................................................. 115C/W 1.4 Recommended operating conditions. Operating supply voltage (VS).................................................................................. 5 V Load resistance (RL)................................................................................................... 50 Ambient operating temperature range (TA)................................................................. -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rads (Si)/s) ..... 300 Krads (Si) Neutron .......................................................................................... 3/ Latch-up ........................................................................................ None 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 MIL-STD-973 MIL-STD-1835 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 MIL-HDBK-780 List of Standard Microcircuit Drawings (SMD's). Standard Microcircuit Drawings. Test Method Standard Microcircuits. Configuration Management. Interface Standard For Microcircuit Case Outlines. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _______ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is based on JA at the following rate of 8.7 mW/C. 3/ Value is to be specified when testing is completed. 4/ Not required by this technology. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 3 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Test circuits and waveforms. The test circuits and waveforms shall be as specified on figure 2. 3.2.4 Irradiation circuit. The irradiation circuit shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 4 TABLE I. Electrical performance characteristics. Conditions 1/ -55C < TA < +125C VS = 5 V unless otherwise specified VCM = 0 V Test Symbol Device type Group A subgroups Limits Min Max 6 10 10 Unit Input offset voltage VIO All 1 2, 3 -6 -10 -10 40 38 38 45 42 42 45 42 42 -40 -65 -65 mV M, D, P, L, R, F 2/ Common mode rejection ratio CMRR 02 All 1 1 2, 3 VCM = 2 V +V = 3 V, -V = -7 V +V = 7 V, -V = -3 V M, D, P, L, R, F 2/ dB 02 All 1 1 2, 3 Power supply rejection ratio PSRRP VS = 1.25 V +V = 6.25 V, -V = -5 V +V = 3.75 V, -V = -5 V M, D, P, L, R, F 2/ dB 02 All 1 1 2, 3 PSRRN VS = 1.25 V +V = 5 V, -V = -6.25 V +V = 5 V, -V = -3.75 V M, D, P, L, R, F 2/ dB 02 All 1 1 2, 3 Non-inverting input (+IN) current IBSP VCM = 0 V 40 65 65 40 50 50 A M, D, P, L, R, F 2/ +IN current common mode sensitivity CMSIBP 02 All 1 1 2, 3 VCM = 2 V +V = 3 V, -V = -7 V +V = 7 V, -V = -3 V M, D, P, L, R, F 2/ A/V 02 All 1 1 2, 3 25 20 -50 -75 -75 +IN resistance +RIN 3/ k Inverting input (-IN) current IBSN VCM = 0 V All 1 2, 3 50 75 75 7 10 10 A M, D, P, L, R, F 2/ -IN current common mode sensitivity CMSIBN 02 All 1 1 2, 3 VCM = 2 V +V = 3 V, -V = -7 V +V = 7 V, -V = -3 V M, D, P, L, R, F 2/ A/V 02 1 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 5 TABLE I. Electrical performance characteristics - Continued. Conditions 1/ -55C < TA < +125C VS = 5 V unless otherwise specified Test Symbol Device Type All Group A subgroups 1 2, 3 Limits Min Max 15 27 27 15 27 27 3 2.5 2.5 Unit -IN current power supply sensitivity PPSSIBN VS = 1.25 V +V = 6.25 V, -V = -5 V +V = 3.75 V, -V = -5 V M, D, P, L, R, F 2/ A/V 02 All 1 1 2, 3 NPSSIBN VS = 1.25 V +V = 5 V, -V = -6.25 V +V = 5 V, -V = -3.75 V M, D, P, L, R, F 2/ 02 All 1 1 2, 3 Output voltage swing VOP100 VIN = -3.5 V, AV = -1 RL = 100 VIN = -3 V, AV = -1 RL = 100 VIN = -3 V, AV = -1 RL = 100 M, D, P, L, R, F 2/ V 02 1 VON100 VIN = +3.5 V, AV = -1 RL = 100 VIN = +3 V, AV = -1, RL = 100 VIN = +3 V, AV = -1, RL = 100 M, D, P, L, R, F 2/ All 1 2, 3 -3 -2.5 -2.5 2.5 1.5 1.5 V 02 All 02 1 1, 2 3 1 VOP50 VIN = -3 V, AV = -1, RL = 50 VIN = -2.25 V, AV = -1, RL = 50 VIN = -2.25 V, AV = -1 RL = 50 M, D, P, L, R, F 2/ V VON50 VIN = +3 V, AV = -1 RL = 50 VIN = +2.25 V, AV = -1 RL = 50 VIN = +2.25 V, AV = -1 RL = 50 M, D, P, L, R, F 2/ All 1, 2 3 -2.5 -1.5 -1.5 V 02 1 Output current +IOUT -IOUT 4/ 4/ All All 1, 2 3 1, 2 3 50 30 -50 -30 mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 6 TABLE I. Electrical performance characteristics - Continued. Conditions 1/ -55C < TA < +125C VS = 5 V unless otherwise specified RL = 100 M, D, P, L, R, F 2/ IEE RL = 100 M, D, P, L, R, F 2/ -3 dB bandwidth BW(-1) BW(+1) BW(+2) Gain flatness GF30 GF50 GF100 Slew rate +SR(+1) -SR(+1) +SR(+2) -SR(+2) Rise and fall time tR tF Overshoot +OS -OS Settling time tS AV = -1, VOUT = 200 mVP-P 5/ RF = 430 AV = +1, VOUT = 200 mVP-P 5/ RF = 510 AV = +2, VOUT = 200 mVP-P 5/ RF = 360 f 30 MHz, AV = +2 5/ VOUT = 200 mVP-P f 50 MHz, AV = +2 5/ VOUT = 200 mVP-P f 100 MHz, AV = +2 5/ VOUT = 200 mVP-P AV = +1, VOUT = 5 VP-P 5/ 6/ AV = +1, VOUT = 5 VP-P 5/ 6/ AV = +2, VOUT = 5 VP-P 5/ 6/ RF = 360 AV = +2, VOUT = 5 VP-P 5/ 6/ RF = 360 AV = +2, 5/ 6/ VOUT = 0.5 VP-P, RF = 360 AV = +2, 5/ 6/ VOUT = 0.5 VP-P, RF = 360 AV = +2, 5/ 7/ VOUT = 0.5 VP-P, RF = 360 AV = +2, 5/ 7/ VOUT = 0.5 VP-P, RF = 360 AV = +2, VOUT = 2 V to 0 V 5/ RF = 510 measured at 0.1% AV = +2, VOUT = 2 V to 0 V 5/ RF = 510 measured at 0.05% See footnotes at end of table. 9 33 All All All All All Test Symbol Device type All 02 All 02 All Group A subgroups 1 2, 3 1 1 2, 3 1 4 4 4 4 4 4 4 4 4 4 9 9 4 4 9 14 Limits Min Max 26 33 33 -26 -33 -33 300 550 350 -14 Unit Quiescent power supply current ICC mA mA MHz 0.04 0.10 0.30 1200 1100 1650 1500 1 1 25 20 20 dB V/s ns % ns STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 7 TABLE I. Electrical performance characteristics - Continued. Conditions 1/ -55C < TA < +125C VS = 5 V unless otherwise specified f = 30 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 f = 50 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 f = 100 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 3rd harmonic distortion HD3 f = 30 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 f = 50 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 f = 100 MHz, AV = +2 5/ VOUT = 2 VP-P, RF = 360 All Test Symbol Device type Group A subgroups Limits Min Max -48 -45 -35 -65 -60 -40 Unit 2nd harmonic distortion HD2 All 4 4 4 4 4 4 dBc dBc 1/ Unless otherwise specified, AV = +1, fixed resistance (RF) = 510 , source resistance (RS) = 0 , load resistance (R L) = 100 , and VOUT = 0 V. See figure 2. 2/ Device type 02 only, will meet all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the 'F' level. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 3/ Guaranteed from +IN common mode rejection test, by: +RIN = 1/CMSIBP. 4/ Guaranteed from VOUT test with RL = 50 , by: IOUT = VOUT/50 . 5/ If not tested, shall be guaranteed to the limits specified in table I herein. 6/ Measured between 10% and 90% points. 7/ For 200 ps input transition times, overshoot decreases as input transition times increase, especially for AV = +1. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 8 Device types Case outline Terminal number 1 2 3 4 5 6 7 8 01 and 02 P Terminal symbol NC -INPUT +INPUT -VS NC OUTPUT +VS NC FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 9 NOTES: 1. Unless otherwise noted, component value multiplier and tolerances shall be as follows: resistors are + or - 1% and capacitors are + or - 10%. 2. Chip components are recommended. FIGURE 2. Test circuits and waveforms. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 10 FIGURE 2. Test circuits and waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 11 NOTES: R1 = R2 = 1 k, 5 % R3 = 10 k, 5 % C1 = C2 = 0.1 F +VS = +5.5 V 0.5 V -VS = -5.5 V 0.5 V FIGURE 3. Irradiation circuit. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 12 TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, TM 5005, table I) Device class M Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1 1,2,3 1/ 1,2,3,4,9 3/ 1 1 1 Subgroups (in accordance with MIL-I-38535, table III) Device class Q 1 1,2,3 1/ 1,2,3,4,9 3/ 1 1 1 Device class V 1 1,2,3 1/ 2/ 1,2,3,4,9 3/ 1,2,3 2/ 1 1 1/ PDA applies to subgroup 1. For class V to subgroups 1 and . 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see Table I). 3/ Subgroups 4 and 9 are guaranteed if not tested. Table IIB. Burn-in and operating life test Delta parameters (+25C). Parameters Symbol Delta Limits Input offset voltage VIO 3.0 mV 8.0 A 8.0 A Positive input bias current +IIB Negative input bias current -IIB STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 13 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. Interim and final electrical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer's Quality Management (QM) plan. b. c. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 or as specified in QM plan including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. b. Tests shall be as specified in table IIA herein. Subgroups 5, 6, 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. TA = +125C, minimum. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. b. c. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 14 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 Condition A and as specified herein. 4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k rads(SI). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and herein (See 1.5). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table I, for 12 2 the subgroups specified in table IIA herein at TA = +25C 5C after an exposure of 2 X 10 neutrons/cm (minimum). 4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (See 1.5). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test structures at technology qualifications and after any design or process changes which may effect the RHA capability of the process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 15 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone (614) 692-0674. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 16 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 10. SCOPE 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 10.2 PIN. The PIN is as shown in the following example: 5962 F 94676 02 V 9 A Federal stock class designator \ RHA designator (see 10.2.1) / \/ Drawing number Device type (see 10.2.2) Device class designator (see 10.2.3) Die code Die Details (see 10.2.4) 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type 02 10.2.3 Device class designator. Device class Q or V Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 Generic number HS-1100RH Circuit function Radiation hardened, ultra high speed current feedback amplifier STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 10.2.4. Die Details. The die details designation shall be a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die physical dimensions. Die type 02 10.2.4.2. Die bonding pad locations and electrical functions. Die type 02 10.2.4.3. Interface materials. Die type 02 10.2.4.4. Assembly related information. Die type 02 Figure number A-1 Figure number A-1 Figure number A-1 Figure number A-1 10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 20. APPLICABLE DOCUMENTS. 20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification, standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's). (Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. 30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturer's QM plan, for device classes Q and V and herein. 30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure A-1. 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1. 30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1. 30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of this document. - Test Method Standard Microcircuits. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer's identification and the PIN listed in 10.2 herein. The certification mark shall be a "QML" or "Q" as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. QUALITY ASSURANCE PROVISIONS 40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. 40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer's QM plan. As a minimum it shall consist of: a) b) c) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007. 100% wafer probe (see paragraph 30.4). 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010 or the alternate procedures allowed within MIL-STD-883 test method 5004. 40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4. 50. DIE CARRIER 50.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturer's QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 60 NOTES 60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (614)-692-0536. 60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within MIL-PRF-38535 and MIL-STD-1331. 60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 +INPUT -INPUT -VS -VL VH +VS OUTPUT NOTE: Pad numbers reflect terminal numbers when placed in case outline P. FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-94676 Die physical dimensions. Die size: 1600 x 1130 microns Die thickness: 14 mils 1 mils Interface materials. Top metallization: AlCu (2%) 16 kA 0.8 kA Backside metallization: None Glassivation. Type: Nitride Thickness: 4 kA 0.5 kA Substrate: UHF-1, bonded wafer, DI (dielectrically isolated) Assembly related information. Substrate potential: Floating Special assembly instructions: 1. -VS and +VS must be double bonded. 2. -VS and -VL must be bonded to the same post. 3. +VS and VH must be bonded to the same post. FIGURE A-1. Die bonding pad locations and electrical functions - continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE A REVISION LEVEL 5962-94676 SHEET D 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 00-07-17 Approved sources of supply for SMD 5962-94676 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard microcircuit drawing PIN 1/ 5962-9467601MPA 5962F9467602VPA 5962F9467602VPC 5962F9467602V9A Vendor CAGE number 34371 34371 34371 34371 Vendor similar PIN 2/ HFA1100MJ/883 HS7-1100RH-Q HS7B-1100RH-Q HS0-1100RH-Q 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Intersil Corporation P.O. Box 883 Melbourne, FL 32902-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. |
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