 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Guilin Strong Micro-Electronics Co.,Ltd. GMBAW56 (BAW56) SWITCHING DIODE (BAW56) FEATURES Characteristic Power dissipation Forward Current Reverse Voltage Junction and Storage Temperature DEVICE DEVICE =A BAW56=A1 BAW56=A1 ELECTRICAL ELECTRICAL Characteristic Reverse Breakdown Voltage (IR=100uA) Reverse Leakage Current (VR=70V) Forward Voltage(Test Condition) IF=1mA IF=10mA IF=50mA IF=150mA Diode Capacitance (VR=0V, f=1MHz) Reverse Recovery Time SOT-23 MARKING Symbol PD(Ta=25) IF VR TJ,Tstg Max 225 200 70 Unit mW mA V -55to+150 CHARACTERISTICS Symbol V(BR) IR Min 70 -- Max -- 1 Unit V uA ) (TA=25 25 unless otherwise noted 25) VF -- CD Trr 715 855 1000 1250 1.5 6 mV -- -- pF nS Guilin Strong Micro-Electronics Co.,Ltd. GMBAW56 DIMENSION DIMENSION |
Price & Availability of GMBAW56
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |