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| PD- 91809B SMPS MOSFET IRFB11N50A HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.52 ID 11A TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Applicable Off Line SMPS Topologies: l l l Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- 2.0 --- --- --- --- Typ. --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A 0.52 VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 14 35 32 28 1423 208 8.1 2000 55 97 Max. Units Conditions --- S VDS = 50V, ID = 6.6A 52 ID = 11A 13 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 11A ns --- RG = 9.1 --- RD = 22,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 275 11 17 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 11 --- --- showing the A G integral reverse --- --- 44 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 11A, VGS = 0V --- 510 770 ns TJ = 25C, IF = 11A --- 3.4 5.1 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB11N50A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) 4.5V 20s PULSE WIDTH VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 0.1 0.1 TJ = 25 C 1 10 100 4.5V 1 1 10 20s PULSE WIDTH TJ = 150 C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID = 11A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 10 2.0 TJ = 150 C TJ = 25 C 1 1.5 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB11N5OA 2400 2000 VGS , Gate-to-Source Voltage (V) V GS C is s C rss C oss = = = = 0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd 20 ID = 11A 6.6A VDS = 400V VDS = 250V VDS = 100V C , C a pa c itan c e (p F ) C is s 1600 16 C oss 1200 12 8 800 C rs s 400 4 0 1 10 100 1000 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 100 10 ID , Drain Current (A) TJ = 150 C 10us 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB11N50A 12 VDS VGS RG RD 10 D.U.T. + I D , Drain Current (A) 8 -VDD 10V 6 Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit VDS 90% 2 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB11N5OA 1 5V 600 EAS , Single Pulse Avalanche Energy (mJ) TOP 500 VDS L D R IV E R BOTTOM ID 4.9A 7.0A 11A 400 RG 20V tp D .U .T IA S + V - DD A 300 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V D S a v , Avalanche V oltage (V) 660 640 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 620 50K 12V .2F .3F 600 D.U.T. VGS 3mA + V - DS 580 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 A I av , A valanche C urrent (A ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRFB11N50A Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFB11N5OA Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 4 ( .1 3 9 ) -A 6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 ) -B4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 4 1 5 .2 4 ( .6 0 0 ) 1 4 .8 4 ( .5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 1 4 .0 9 ( .5 5 5 ) 1 3 .4 7 ( .5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 3X 1 .4 0 ( .0 5 5 ) 1 .1 5 ( .0 4 5 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M B A M 3X 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .3 6 (.0 1 4 ) 2 .5 4 (.1 0 0 ) 2X N OTE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E XA M P LE : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L OT C O D E 9 B 1 M A IN T E R N A T IO N A L R E C TIFIE R LOGO A SS E MB LY LOT COD E P A RT NU M B ER IR F 1 0 10 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YE A R W W = W E EK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 4.5mH RG = 25, IAS = 11A. (See Figure 12) ISD 11A, di/dt 140A/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice 3/99 8 www.irf.com |
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