![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
R N N-CHANNEL MOSFET JCS10N60BT MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 9.5 A 600 V 0.75 34 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical20pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 20pF) dv/dt RoHS ORDER MESSAGE Order codes JCS10N60BT-O-B-N-B Halogen Free NO Device Weight 1.71 g(typ) Marking JCS10N60BT Package TO-262 Packaging Tube 201012A 1/9 R JCS10N60BT ABSOLUTE RATINGS (Tc=25) Unit V A A A V mJ A mJ V/ns W Value JCS10N60BT 600 9.5* 6.0* 40* 30 713 9.5 17.8 4.5 178 Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM VGSS -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 EAS Single Pulsed Avalanche Energy note 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Currentnote 1 IAR EAR 3 dv/dt Peak Diode Recovery dv/dtnote 3 PD TC=25 -Derate above 25 TJTSTG Power Dissipation 1.43 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 TL 300 * *Drain current limited by maximum junction temperature 201012A 2/9 R JCS10N60BT Tests conditions Min Parameter Symbol Typ Max Units ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1610 2065 156 20 210 26 pF pF pF VGS(th) VDS = VGS , ID=250A 3.0 5.0 V BVDSS ID=250A, VGS=0V 600 V BVDSS/ ID=250A, referenced to 25 TJ VDS=600V,VGS=0V, TC=25 VDS=480V, IGSSF VDS=0V, TC=125 - 0.68 - V/ IDSS - - 1 10 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=4.75A VDS = 40V, ID=4.75Anote 4 - 0.66 0.75 gfs - 8.2 - S 201012A 3/9 R JCS10N60BT td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=9.5A VGS =10V note 45 VDD=300V,ID=9.5A,RG=25 note 45 68 91 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 109 150 214 300 85 165 34 6.9 12 45 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 9.5 A ISM - - 38 A VGS=0V, IS=9.5A - 1.05 - V trr Qrr VGS=0V, IS=9.5A (note 4) dIF/dt=100A/s - 425 4.31 - ns C THERMAL CHARACTERISTIC Max JCS10N60BT 0.7 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=14.2mH, IAS=9.5A, VDD=50V, RG=25 , TJ=25 3ISD 10A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W Notes: 1 Pulse width limited by maximum junction temperature 2L=14.2mH, IAS=9.5A, VDD=50V, RG=25 ,Starting TJ=25 3 ISD 10A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature 201012A 4/9 R JCS10N60BT ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 25 10 ID [A] ID [A] 150 1 1 Notes 1. 250s pulse test 2. TC=25 0.1 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.00 0.95 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 0.90 RDS(on) [ ] IDR [A] 0.85 0.80 0.75 0.70 0.65 0.60 VGS=10V 25 1 VGS=20V 150 Note Tj=25 0 2 4 6 8 10 12 14 16 18 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Notes 1. 250s pulse test 2. VGS=0V 1.0 1.1 1.2 1.3 ID [A] VSD [V] Capacitance Characteristics 12 Gate Charge Characteristics VDS=480V 10 VDS=300V VDS=120V VGS Gate Source Voltage[V] 8 6 4 2 0 0 10 20 30 40 Qg Toltal Gate Charge [nC] 201012A 5/9 R JCS10N60BT On-Resistance Variation vs. Temperature 4.0 3.5 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 BVDS(Normalized) 1.1 3.0 RD(on)(Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -75 1.0 0.9 Notes 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 Notes 1. VGS=10V 2. ID=5A -50 -25 0 25 50 75 100 125 150 0.8 -75 T j [ ] Tj [ ] Maximum Safe Operating Area For JCS10N60BT 10 2 Operation in This Area is Limited by RDS(ON) 10s 100s ID Drain Current [A] 10 1 1ms 10ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 VDS Drain-Source Voltage [V] 10 1 10 2 10 3 Maximum Drain Current vs. Case Temperature 10 ID Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC Case Temperature [] 201012A 6/9 R JCS10N60BT Transient Thermal Response Curve For JCS10N60BT D = 0 .5 ELECTRICAL CHARACTERISTICS (curves) (t) Thermal Response 1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C (t)= 0 .7 /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 JC P Z DM 0 .0 1 s in g le p u ls e t1 t2 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201012A 7/9 R JCS10N60BT Unitmm PACKAGE MECHANICAL DATA TO-262 201012A 8/9 R JCS10N60BT 1. 2. NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201012A 9/9 |
Price & Availability of JCS10N60BT-O-B-N-B
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |