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| www..com www..com 10 10V 8 5V 3.5V 8 6 Vds=5V Id (A) 2.5V 4 Vgs=2V Id(A) 6 4 125C 2 25C 2 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region characteristics 200 0 1 1.25 1.5 1.75 2 2.25 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 180 1.8 1.6 1.4 1.2 1 0.8 Vgs=2.5V Vgs=4.5 Rds(on) (m:) Vgs=2.5V 160 140 120 Vgs=4.5V 100 0 1 2 3 4 5 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 www..com Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 360 310 125C 260 210 160 110 60 10 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C Id=2.3A 1E+00 125C 1E-01 Rds(on) (m:) Is (A) 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vsd (Volts) Figure 6: Body-Diode Characteristics 25C 5 4 Vds=27.5V Id=2.1A 400 360 320 Ciss Capacitance (pF) 280 240 200 160 120 80 40 0 Coss Crss Vgs (Volts) 3 2 1 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited Tj(max)=150C Ta=25C 15 Tj(max)=150C Ta=25C 100Ps 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 1ms Power (W) Id (Amps) 10.0 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) www..com 10 D=Ton/T Tj,pk=TA+Pdm.ZTja.RTja RTja=100C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZTja Normalized Transient Thermal Resistance 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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