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 CORPORATION
GL159
Description
ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
The GL159 is designed for general purpose switching and amplifier applications.
Features & Amps continuous current, up to 15Amps peak current 5 Package Dimensions
&Excellent gain characteristic specified up to 10Amps &Very low saturation voltages
SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 C 0C 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. C 13 T YP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD
Ratings +150 -55~+150 -100 -60 -6 -5 -15 3
Unit
V V V A A W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.
Electrical Characteristics(Ta = 25 :
Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Min. -100 -60 -6 100 100 75 10 Typ. -20 -85 -155 -370 -1.08 -0.935 200 200 90 25 120
,unless otherwise stated) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -50 nA VCB=-80V, IE=0 -50 nA VCES=-60V -10 nA VEB=-6V, IC=0 -50 mV IC=-100mA, IB=-10mA -140 mV IC=-1A, IB=-100mA -210 mV IC=-2A, IB=-200mA -460 mV IC=-5A, IB=-500mA -1.24 V IC=-5A, IB=-500mA -1.07 V VCE=-1V, IC=-5A VCE=-1V, IC=-10mA 300 VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A MHz VCE=-10V, IC=-100mA, f=50MHz
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CORPORATION
Cob ton toff 74 82 350 pF ns
2%
ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C
VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-2A, IB1=IB2=-200mA
*Measured under pulse condition. Pulse width
300 s, Duty Cycle
Characteristics Curve
Spice parameter data is available upon request for this device.
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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