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R
N N-CHANNEL MOSFET
JCS7N65F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson@Vgs=10V Qg
UPS
7.0 A 650 V 1.35 54 nC
APPLICATIONS
High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 23pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
Crss ( 23pF) dv/dt RoHS
ORDER MESSAGE
Order codes JCS7N65F-O-F-N-B Halogen Free NO Device Weight 2.20 g(typ) Marking JCS7N65F Package TO-220MF Packaging Tube
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ABSOLUTE RATINGS (Tc=25)
Unit V A A A V mJ A mJ V/ns W Symbol VDSS ID T=25 T=100 IDM VGSS Value JCS7N65F 650 7.0* 4.4* 28* 30 420 7.0 14.7 5.5 48
Parameter Drain-Source Voltage Drain Current
-continuous
1 Drain Current - pulse note 1 Gate-Source Voltage
2 EAS Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Currentnote 1 3 Peak Diode Recovery dv/dtnote 3 IAR EAR dv/dt PD TC=25 -Derate above 25 TJTSTG
Power Dissipation
0.38
W/
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes
-55+150
TL
300
* *Drain current limited by maximum junction temperature
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Tests conditions Min Parameter Symbol Typ Max Units
ELECTRICAL CHARACTERISTICS
Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1380 1800 115 23 150 30 pF pF pF VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V referenced to 650 V
BVDSS/ ID=250A, 25 TJ IDSS
-
0.65 -
10 100 100
V/ A A nA
VDS=650V,VGS=0V, TC=25 VDS=520V, VDS=0V, TC=125
IGSSF
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=3.5A
-
1.15 1.35
gfs
VDS = 40V, ID=3.5Anote 4
-
8.2
-
S
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td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=7A VGS =10V note 45 VDD=300V,ID=7A,RG=25 note 45 30 70 ns ns ns ns nC nC nC
ELECTRICAL CHARACTERISTICS
Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 80 170 125 260 85 180 54 6.8 23 65 -
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 7.0 A
ISM
-
-
28
A
VGS=0V,
IS=7.0A
-
-
1.4
V
trr Qrr
VGS=0V, IS=7.0A dIF/dt=100A/s (note 4)
-
415 4.6
-
ns C
THERMAL CHARACTERISTIC
Max JCS7N65F 2.6 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
1 2L=15.7mH, IAS=7.0A, VDD=50V, RG=25 , TJ=25 3ISD 7.0A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5
Symbol Rth(j-c) Rth(j-A)
Unit /W /W
Notes: 1 Pulse width limited by maximum junction temperature 2L=15.7mH, IAS=7.0A, VDD=50V, RG=25 ,Starting TJ=25 3 ISD 7.0A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature
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ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics
10
On-Region Characteristics
VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top
10
25 ID [A]
ID [A]
150
1
1
Notes 1. 250s pulse test 2. TC=25
0.1
Notes 1.250s pulse test 2.VDS=40V
2 4 6 8 10
1
10
VDS [V]
VGS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
1.40 1.35 1.30
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
RDS(on) [ ]
1.25 1.20 1.15 1.10 1.05 1.00 0.95
VGS=10V
IDR [A] 25
1
VGS=20V
150
Note T j=25
0.1
Notes 1. 250s pulse test 2. VGS=0V
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
2
4
6
8
10
0.4
0.5
0.6
0.7
ID [A]
VSD [V]
Capacitance Characteristics
12
Gate Charge Characteristics
10
VDS=480V VDS=300V
VGS Gate Source Voltage[V]
8
VDS=120V
6
4
2
0
0
10
20
30
40
50
60
Qg Toltal Gate Charge [nC]
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On-Resistance Variation vs. Temperature
3.0 2.5
ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature
1.2
BVDS(Normalized)
1.1
RD(on)(Normalized)
2.0
1.0
1.5
1.0
0.9
Notes 1. VGS=0V 2. ID=250A
-50 -25 0 25 50 75 100 125 150
0.5
Notes 1. VGS=10V 2. ID=3.5A
-50 -25 0 25 50 75 100 125 150
0.8 -75
0.0 -75
T j [ ]
Tj [ ]
Maximum Safe Operating Area For JCS7N65F
Maximum Drain Current vs. Case Temperature
Transient Thermal Response Curve For JCS7N65F
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Unitmm
PACKAGE MECHANICAL DATA TO-220MF
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NOTE
Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1.
1. 2.
3. 4.
99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533
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