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| New Product SiA810DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.053 at VGS = 4.5 V 0.063 at VGS = 2.5 V 0.077 at VGS = 1.8 V ID (A)a 4.5 4.5 4.5 Qg (Typ.) 4.1 nC FEATURES * Halogen-free * LITTLE FOOT(R) Plus Schottky Power MOSFET * New Thermally Enhanced PowerPAK(R) SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile * Low Vf Trench Schottky Diode RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.45 at 1 A IF (A)a 2 APPLICATIONS * Load Switch for Portable Devices (MP3/Cellular) * Boost Converter D K PowerPAK SC-70-6 Dual 1 A 2 NC K K D G 3 D Marking Code GAX Part # code 0.75 mm XXX Lot Traceability and Date code G 6 5 2.05 mm 4 S 2.05 mm S Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 C Continuous Drain Current (TJ = 150 C) (MOSFET) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 C Maximum Power Dissipation (MOSFET) TC = 70 C TA = 25 C TA = 70 C TC = 25 C Maximum Power Dissipation (Schottky) TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 C TA = 25 C IDM IS IF IFM ID Symbol VDS VKA VGS Limit 20 20 8 4.5a 4.5a 4.5a, b, c 3.8b, c 20 4.5a 1.6b, c 2b 5 6.5 5 1.9b, c 1.2b, c 6.8 4.3 1.6b, c 1.0b, c - 55 to 150 260 W A V Unit C Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 1 New Product SiA810DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g Maximum Junction-to-Case (Drain) (Schottky) t5s Steady State t5s Steady State Symbol RthJA RthJC RthJA RthJC Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. g. Maximum under Steady State conditions is 110 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 2.6 ID 3.8 A, VGEN = 8 V, Rg = 1 VDD = 10 V, RL = 2.6 ID 3.8 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 4.8 A VDS = 10 V, VGS = 4.5 V, ID = 4.8 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.4 A VGS = 1.8 V, ID = 1.1 A VDS = 10 V, ID = 3.7 A 20 0.043 0.052 0.062 15 400 70 40 7 4.1 0.65 0.8 2.5 5 32 30 53 5 12 15 10 10 50 45 80 10 20 25 15 ns 11.5 7 nC pF 0.053 0.063 0.077 S 0.4 20 1 - 2.8 1 100 1 10 V mV/C V nA A A Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 3.8 A, di/dt = 100 A/s, TJ = 25 C IS = 3.8 A, VGS = 0 V 0.8 15 8.5 10 5 TC = 25 C 4.5 20 1.2 30 20 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Test Conditions IF = 1 A IF = 1 A, TJ = 125 C Vr = 5 V Vr = 5 V, TJ = 85 C Maximum Reverse Leakage Current Irm Vr = 20 V Vr = 20 V, TJ = 85 C Vr = 20 V, TJ = 125 C Junction Capacitance CT Vr = 10 V Min. Typ. 0.41 0.36 0.015 0.50 0.02 0.7 5 60 Max. 0.45 0.41 0.08 5.00 0.10 7 50 pF mA Unit V Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 20 10 16 I D - Drain Current (A) VGS = 5 thru 2.5 V I D - Drain Current (A) VGS = 2 V 8 12 6 8 VGS = 1.5 V 4 VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 2.0 4 2 TC = 25 C TC = 125 C 0 0.0 TC = - 55 C 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.16 600 Transfer Characteristics 0.14 R DS(on) - On-Resistance () VGS = 1.8 V C - Capacitance (pF) 500 Ciss 0.12 400 0.10 300 0.08 VGS = 2.5 V 200 Coss Crss 0 4 8 12 16 20 0.06 VGS = 4.5 V 100 0.04 0 4 8 12 16 20 ID - Drain Current (A) 0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.8 A VGS - Gate-to-Source Voltage (V) 6 VDS = 10 V 4 1.6 1.5 Capacitance VGS = 4.5 V, 2.5 V, 1.8 V, ID = 3.7 A 1.4 R DS(on) - On-Resistance 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 8 0.7 - 50 VDS = 16 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 100 0.14 0.12 R DS(on) - On-Resistance () I S - Source Current (A) 10 0.10 0.08 ID = 3.7 A, 125 C TJ = 150 C 1 TJ = 25 C 0.06 0.04 ID = 3.7 A, 25 C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.02 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 - 50 ID = 250 A On-Resistance vs. Gate-to-Source Voltage 20 15 Power (W) VGS(th) (V) 10 5 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by R DS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 s 1 1 ms 10 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 * VGS BVDSS Limited 100 ms 1 s, 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 12 8 10 ID - Drain Current (A) Power Dissipation (W) 6 8 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 25 50 75 100 125 150 0 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 7 New Product SiA810DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 100 10 I F - Reverse Current (mA) 1 20 V 0.1 5V 0.01 0.001 0.0001 0.00001 - 50 - 25 0 25 50 75 100 125 150 I F - Forward Current (A) TJ = 150 C 10 1 0.10 TJ = 25 C 0.01 0.0 0.1 0.2 0.3 0.4 0.5 T J - Junction Temperature (C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature 300 Forward Voltage Drop CT - Junction Capacitance (pF) 240 180 120 60 0 0 4 8 12 16 20 VRS - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74957. Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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