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SIR-320ST3F
Sensors
Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.
!Applications Optical control equipment Light source for remote control devices
!External dimensions (Units : mm)
3.80.3 3.10.2 Notes: 1. Unspecified tolerance shall be 0.2. 2. Dimension in parenthesis are show for reference.
5.20.3 Min.24
!Features 1) Compact (3.1mm). 2) High efficiency, high output PO=9.0mW (IF=50mA). 3) Wide radiation angle =18deg. 4) Emission spectrum well suited to silicon detectors (P=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability.
2 1
(2.5)
20.2
2.51
2- 0.5
Max.1
4-0.6
1.1
1 Anode
2 Cathode
!Absolute maximum ratings (Ta = 25C)
Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature
Pulse width=0.1msec, duty ratio 1%
Symbol IF VR PD IFP Topr Tstg
Limits 75 5 100 1.0 -25~+85 -40~+85
Unit mA V mW A C C
1/3
SIR-320ST3F
Sensors
!Electrical and optical characteristics (Ta = 25C)
Parameter Optical output Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Pesponse time Cut-off frequency Symbol PO IE VF IR Min. - 5.6 - - - - - - - Typ. 9 - 1.2 - 940 40 18 1.0 1.0 Max. - - 1.5 10 - - - - - Unit mW mW/sr V A nm nm deg s MHz IF=5mA IF=5mA IF=5mA VR=3V IF=5mA IF=5mA IF=5mA IF=5mA IF=5mA Conditions
P 1 / 2 tr*tf
fC
!Electrical and optical characteristic curves
FORWARD CURRENT : IF (mA)
100
-25C 0C
RELATIVE OPTICAL OUTPUT : PO (%)
2
100
FORWARD CURRENT : IF (mA)
100 80 60 40
80
80
25C 50C
60
60
75C
40
40 20
20
20 0 850
0
-20
0
20
40
60
80
100
00
1 FORWARD VOLTAGE : VF (V)
900
950
1000
1050
AMBIENT TEMPERATURE : Ta (C)
OPTICAL WAVELENGTH : (nm)
FIg.1 Forward current falloff
Fig.2 Forward current vs. forward voltage
Fig.3 Wavelength
50
EMITTING STRENGTH : IE (mW/sr)
RELATIVE EMITTING STRENGTH : IE (%)
200
40
100 50
30
20
20 10 -20 0 20 40 60 80 100
10
0 0
20
40
60
80
100
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (C)
Fig.4 Emitting strength vs. forward current
Fig.5 Radiant intensity vs. ambient temperature
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SIR-320ST3F
Sensors
RELATIVE EMITTING STRENGTH (%)
20 30 40 50 60 60 40 70 80 90 100 20 80 10 0 100
80
60
40
20
0 0 10 20 30 40 50 60 70 80 90 ANGULAR DISPLACEMENT : (deg)
RELATIVE EMITTING STRENGTH (%)
Fig.6 Directional pattern
20 30 40 50
10
0
100
80
no masking 60 70 80 90 100
60
40
20
80
60
40
20
0 0 10 20 30 40 50 60 70 80 90 ANGULAR DISPLACEMENT : (deg)
RELATIVE EMITTING STRENGTH (%)
Fig.7 Directional pattern
RELATIVE EMITTING STRENGTH (%)
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