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| C08C 0.8m 5V CMOS Process DALSA Semiconductor's proven ability to transfer and develop customized processes is unmatched in the industry C08C Overview 0.8m 5V CMOS process, compatible with most 0.8m CMOS processes in the industry. Twin-tub, P or N type epi or bulk substrates Single or double poly Two or three layer metal process Features Propagation delay: Tpd = 200ps High value (10k:/sq.) and low TCR poly resistor options Fully transportable to C08E and C08G high voltage processes ProToDuction option for low-cost prototyping BSIM3v3.22 models available in Hspice and Spectre Comprehensive mixed signal Cadence Foundry Design Kit (FDK) available Applications All 5V digital, analog or mixed signal circuits Layout Rules Layer Poly 1 Poly2 Contact Metal 1 Via Metal 2 Via 2 Metal 3 Width (m) 0.8 1.0 0.9x0.9 1.1 1.0x1.0 1.2 2.0x2.0 3.0 Space (m) 0.9 1.2 0.8 1.0 1.0x1.0 1.1 2.0 2.4 Mixed Signal Capabilities 5V double poly capacitor (1.05fF/m) High value poly resistor option (10k:/sq) 5V 0.8m cmos Polysilicon fuses Digital gate count 1.8K gates/mm Simplified Cross-Section of 5V CMOS 5V NM OS S G D B B n+ 5 V PM O S S G D n+ n+ P-W e ll p+ su b s trate n o r p p+ p+ N -W e ll 26-Sep-02 03-70-00146-00 www.dalsasemi.com 1 DALSA Semiconductor * C08C 5V CMOS Process C08C 0.8m 5V CMOS Process Electrical Parameters of Representative Transistors Parameter W x L (Pm) VT (V) Ids (mA) Bvdss (V) Isub (PA/Pm) RON (:) 5V NMOS 50 x 0.8 0.65 19 12 0.85 86 5V PMOS 50 x 0.8 -0.65 9 12 256 Resistor Type Poly 1 Poly 2 Low TCR HiRes Sheet Res :/sq 50 25 37 15 325 100 10K 3K Example NMOS Output Curve (L=0.8m, W=32m) Example PMOS Output Curve (L=0.8m, W=32m) For More Information DALSA Semiconductor 18 Blvd de l'aeroport Bromont Quebec Canada J2L 1S7 Tel : +01 800 718 9701 Fax : +01 450 534 3201 e-mail: sales@dalsasemi.com www.dalsasemi.com 26-Sep-02 03-70-00146-00 www.dalsasemi.com |
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