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| HUR2x60-30, HUR2X60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 HUR2x60-30 HUR2X60-40 VRSM V 300 400 VRRM V 300 400 P Q R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=75oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=4A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 100 60 600 1.6 0.4 -40...+150 150 -40...+150 140 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2x60-30, HUR2X60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 0.65 2.5 1.26 1.68 0.85 0.1 Unit IR VF RthJC RthCH trr IRM mA V K/W ns IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 30 4.8 A FEATURES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2x60-30, HUR2X60-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 160 A IF 120 TVJ=150C TVJ=100C 80 TVJ= 25C 400 Qr 800 TVJ = 100C nC 600 IF = 120A IF = 60A IF = 30A VR = 150V IRM 15 25 A 20 IF = 120A IF = 60A IF = 30A TVJ = 100C VR = 150V 10 40 200 5 0 0.0 0.5 1.0 1.5 V VF 2.0 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr VFR TVJ = 100C IF = 60A 0.85 us 0.80 tfr 0.75 1.2 Kf 1.0 IRM trr 80 70 Qr 60 0.8 IF = 120A IF = 60A IF = 30A 10 8 0.70 0.6 6 0.65 0.4 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/us 1000 4 0 200 400 0.60 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.307 0.353 0.089 0.101 ti (s) 0.0055 0.009 0.0007 0.04 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case |
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