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| 3 Micron CMOS Process Family Process parameters 3m 10 & 5 & 3volts Metal I pitch (line/space) Metal II pitch (line/space) Poly pitch (line/space) Contact Via Gate geometry P-well junction depth N+ junction depth P+ junction depth Gate oxide thickness Inter poly oxide thick. 3/4 3/4 3/3 3x3 3x3 3 4 0.40 0.55 470 650 m m m m m m m m m A A Features Units * LOVMOS Process [3Volts (2.7~3.6) Low Voltage Option] * Double Poly / Double Metal * 6 m Poly Pitch; 7 m Metal Pitch * 7 Volts Maximum Operating Voltage * 10 Volts High Voltage Option * ProToDuctionTM Option for low cost prototypes, * 150 mm wafers. Description The Dalsa Semiconductor 3m CMOS double poly / double metal process family offers three operating voltage options. The standard process has a maximum operating voltage of 7 volts while the high voltage option allows 11 volts operation. The third option is aimed at the 3 volts market. It offers low and matched threshold voltages for improved dynamic range needed in mixed analog/digital applications. MOSFET Electrical parameters 3 MICRON - 10 volts N Channel min. typ. max. Vt (50x3m) Ids (50x3m) Body factor (50x50m) Bvdss Subthres. Slope Field thresh. L effective 12 16 0.6 0.8 82 1.0 P Channel min. typ. max. 0.6 0.8 36 1.0 3 MICRON - 5 volts N Channel min. typ. max. 0.6 0.8 22 1.0 P Channel min. typ. max. 0.6 0.8 9 1.0 3 MICRON - 3 volts N Channel min. typ. max. 0.35 0.50 0.65 42 P Channel min. typ. max. 0.35 0.50 0.65 17 Units Conditions V A/m saturation region 10 V : Vds=Vgs=5v 3&5 V: Vds=Vgs=3v 0.5 21 94 20 2.9 12 16 0.6 18 100 19 2.5 12 10 0.6 16 120 27 2.4 12 10 0.4 18 110 19 2.2 12 10 0.5 16 92 26 2.4 12 10 0.2 14 92 18 2.2 v V mV/ dec V m Ids = 1A 5v : Vds=0.1v 3v : Vds=3.6v Ids = 14A L drawn = 3m www.dalsasemi.com For More Information: DALSA Semiconductor Sales 18 Boulevard de l'Aeroport Bromont, Quebec, Canada J2L 1S7 Tel : Fax email: (450) 534-2321 ext. 1448 (800) 718-9701 (450) 534-3201 dalsasales@dalsasemi.com 3 Micron CMOS Process Family(cont'd) Resistances ( /sq.) 3 m 5 volts & 3 volts min. Pwell Pfield in Pwell N+ P+ Poly gate Poly capacitor Metal I Metal II 2400 20 80 15 75 typ. 17000 3600 28 100 23 100 0.038 0.038 4800 35 120 30 125 max. Capacitances (fF/m2) 3 m 5 volts & 3 volts min. Inter-poly Gate oxide N+ Junction P+ Junction 0.44 0.69 typ. 0.54 0.73 0.17 0.12 max. 0.63 0.78 Bipolar gain1 3 m - 5 volts min. NPN vertical 1 Test typ. 700 max. condition : Vce = 5 volts FIG 1 : I-V Characteristics for a 50x3m N-MOSFET (3m 5 volts process) 5 FIG 2 : I-V Characteristics for a 50x3m P-MOSFET (3m 5 volts process) -2.0 Vgs = 5 volts Vgs = -5 volts 4 -1.5 Vgs = 4 volts Ids (mA) Ids (mA) 3 -1.0 Vgs = -4 volts 2 Vgs = 3 volts Vgs = -3 volts -0.5 1 Vgs = 2 volts 0 0 1 2 3 4 5 0 -1 -2 Vgs = -2 volts 0 -3 -4 -5 Vds (volts) Vds (volts) FIG 3 : Subthreshold Characteristics at Vds=0.1 volts for a 50x3m N-MOSFET (3m 5 volts Process) 10-03 10-04 10-05 10-06 10-07 75 100 FIG 4 : Subthreshold Characteristics at Vds=-0.1 volts for a 50x3m P-MOSFET (3m 5 volts Process) 10-04 10 -05 -36 -30 -24 -18 -12 -6 -0 -2.0 10-06 10-07 Ids (mA) Ids (A) 50 Ids (A) 10-08 10-09 10-10 10 -11 10-08 10-09 10-10 10-11 10-12 25 10-12 10-13 0 0.5 1.0 1.5 0 2.0 10-13 0 -0.5 -1.0 -1.5 Vgs (volts) Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements. For full process specifications contact a Dalsa Semicoonductor sales office or representative. Vgs (volts) Ids (mA) |
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