View DMN2004DWK0711_699178.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DMN2004DWK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * * * Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate)
NEW PRODUCT
CASE
D2
G1
S1
ESD protected up to 2kV
S2 G2 D1
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value 20 8 540 390 1.5 Units V V mA A
Characteristic
Steady State
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 200 625 -65 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 0.5 200 0.5 Typ 0.4 0.5 0.7 Max 1 1 1.0 0.55 0.70 0.9 1.4 150 25 20 Unit V A A V ms V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 16V, VGS = 0V f = 1.0MHz
1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect.
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
1 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DWK
NEW PRODUCT
ID, DRAIN CURRENT (A) 0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
Tch , CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
6
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
2 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DWK
NEW PRODUCT
ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage
Tj, JUNCTION TEMPERATURE (C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current
IDR, REVERSE DRAIN CURRENT (A)
VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
3 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DWK Ordering Information
Part Number DMN2004DWK-7
Notes:
(Note 6) Case SOT-363 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information NEW PRODUCT
D2 G1 S1
NAB YM
S2 G2 D1
NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
2008 V May 5 Jun 6
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
Package Outline Dimensions
A
BC
H K M
J
D
F
L
SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8 All Dimensions in mm
Suggested Pad Layout
E E
Z
G
C
Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN2004DWK
Document number: DS30935 Rev. 3 - 2
4 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated

▲Up To Search▲

Price & Availability of DMN2004DWK0711

	To Download DMN2004DWK0711 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .