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| HAT2005F Silicon N Channel Power MOS FET Application SOP-8 Power switching 8 5 76 Features * * * * Low on-resistance Capable of 2.5V gate drive Low drive current High density mounting 567 8 DD D D 3 12 4 4 G Ordering Information ---------------------------------------- Hitachi Cord EIAJ Cord JEDEC Cord FP-8D SC-527-8A -- SS 23 1 2, 3 4 5, 6, 7, 8 N/C Source Gate Drain ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 20 10 3.5 14 3.5 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** When using the glass epoxy board (40 x 40 x 1.6 mm) HAT2005F Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 20 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 200 A, VDS = 0 VGS = 6.5 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- -- -- 0.5 -- -- -- -- 0.05 10 10 1.5 0.065 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 2A VGS = 4V * ID = 2A VGS = 2.5 V * ID = 2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 2 A VDD = 10 V IF = 3.5 A, VGS = 0 ------------------------------------------------ -- 0.06 0.09 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss ton toff VDF 7 10 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Body-drain diode forward voltage * Pulse Test -- -- -- -- -- -- 810 600 155 100 270 0.9 -- -- -- -- -- -- pF pF pF ns ns V ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- HAT2005F Power vs. Temperature Derating 2.0 Pch (W) Test Condition : When using the glass epoxy board (40 x 40 x 1.6 mm) 1.5 Channel Dissipation 1.0 0.5 0 50 100 150 Ta (C) 200 Ambient Temperature Package Dimensions Unit : mm * SOP-8 5.25 Max 8 4.55 Max 5 1 0.75 Max 4 2.00 Max 2.03 Max 6.8 Max 0.20 - 0.02 + 0.05 0 - 10 1.27 0.40 + 0.10 - 0.05 0.10 0.10 0.25 0.60 + 0.18 - 0.1 0.12 M FP-8D Hitachi Code SC-527-8A EIAJ -- JEDEC |
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