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| Chip Silicon Rectifier SFM11-L THRU SFM16-L Super fast recovery type Formosa MS SMA-L 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE DO-214AC C Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 100 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 32 10 C/w pF +150 o C SYMBOLS MARKING CODE S11 S12 S13 S14 S15 S16 V RRM *1 V RMS *2 VR *3 VF *4 T RR *5 Operating temperature (o C) (V) SFM11-L SFM12-L SFM13-L SFM14-L SFM15-L SFM16-L 50 100 150 200 300 400 (V) 35 70 105 140 210 280 (V) 50 100 150 200 300 400 (V) (nS) *1 Repetitive peak reverse voltage 0.95 35 -55 to +150 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM11-L THRU SFM16-L) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 ~S FM 14 -L INSTANTANEOUS FORWARD CURRENT,(A) SF M1 1-L 1.0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle SF M 15 -L ~ SF M 16 -L 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 60 50 40 30 20 10 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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