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TGA4505 4 Watt Ka Band HPA Key Features * * * * * * * * The image cannot be display ed. Your computer may not hav e enough memory to open the image, or the image may hav e been corrupted. Restart y our computer, and then open the file again. If the red x still appears, y ou may hav e to delete the image and then insert it again. Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology Bias 6 V @ 2.1 A Idq Chip size 4.29 x 3.02 x .05 mm (0.169 x 0.119 x 0.002 in) Primary Applications Product Description The TriQuint TGA4505 is a compact 4 Watt High Power Amplifier MMIC for Kaband applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA4505 provides a nominal 35.5 dBm of output power at 1 dB gain compression from 24-32 GHz with a small signal gain of 23 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. The TGA4505 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant. * * Satellite Ground Terminal Point-to-Point Radio Fixtured Data Bias Conditions: Vd = 6 V, Idq = 2.1A Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 1 TGA4505 TABLE I MAXIMUM RATINGS Symbol V I + - Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current: Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Value 8V -5V TO 0V 4A 62 mA 24 dBm 27.7 W 200 C 320 C -65 to 150 C Notes 2/ 2/ 2/ 2/, 3/ 4/, 5/ V + | IG | PIN PD TCH TSTG 1/ 2/ 3/ 4/ Storage Temperature These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 C, the median life is 2.3E4 hours. Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL MIN 5/ LIMITS MAX UNITS 70.5 79.5 1.5 30 30 mA mS V V V IDSS(Q35) GM (Q35) |VP(Q1, Q9, Q35)| |VBVGS(Q35)| |VBVGD(Q35)| 15 33 0.5 11 11 1/ Q35 is a 150 um Test FET 2/ VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 2 TGA4505 TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 6V, Id = 2.1A) SYMBOL PARAMETER TEST CONDITION F = 24-31 GHz TYPICAL UNITS Gain Small Signal Gain 23 dB IRL Input Return Loss F = 24-31 GHz 6 dB ORL Output Return Loss F = 24-31 GHz 12 dB PWR Output Power @ P1dB F = 24-31 GHz 35 dBm Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 3 TGA4505 TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6V ID = 2.05 A Pdiss = 12.3 W TCH (C) 128 JC (C/W) 4.7 Tm (HRS) 7.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 23 W with 4 W RF power delivered to load. Power dissipated is 19 W and the temperature rise in the channel is 88 C. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 4 TGA4505 Measured Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 5 TGA4505 Measured Fixtured Data Bias Conditions: Vd = 6 V, Id = 2.1 A Data taken @ 30 GHz TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 6 TGA4505 Mechanical Drawing 0.323 [0.013] 0.667 [0.026] 3.249 [0.128] 1.750 [0.069] 3.720 [0.146] 4.078 [0.161] 3.019 [0.119] 2.903 [0.114] 2.888 [0.114] 2.902 [0.114] 2 3 4 5 6 7 2.878 [0.113] 2.874 [0.113] 1.507 [0.059] 1 8 1.511 [0.059] 0.142 [0.006] 0.132 [0.005] 0.117 [0.005] 0.000 [0.000] 14 13 12 11 10 9 0.150 [0.006] 0.142 [0.006] 0.118 [0.005] 2.092 [0.082] 3.246 [0.128] 1.747 [0.069] Units: millimeters (inches) Thickness: 0.050 (0.002) (reference only) Chip edge to bond pad dimensions are shown to center of pad Chip size: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad #1: #2: #3: #4: #5: #6: #7: #8: #9: #10: #11: #12: #13: #14: RF IN VG1 VD1 VG2 VD2 VG3 VD3 RF OUT VD3 VG3 VD2 VG2 VD1 VG1 0.130 x 0.205 (0.005 x 0.008) 0.080 x 0.080 (0.003 x 0.003) 0.143 x 0.103 (0.006 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.205 x 0.105 (0.008 x 0.004) 0.080 x 0.080 (0.003 x 0.003) 0.095 x 0.130 (0.004 x 0.005) 0.130 x 0.205 (0.005 x 0.008) 0.095 x 0.130 (0.004 x 0.005) 0.080 x 0.080 (0.003 x 0.003 0.205 x 0.145 (0.008 x 0.006) 0.105 x 0.105 (0.004 x 0.004) 0.145 x 0.105 (0.006 x 0.004) 0.080 x 0.080 (0.003 x 0.003 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 7 1.945 [0.077] 3.720 [0.146] 0.000 [0.000] 0.133 [0.005] 0.323 [0.013] 0.667 [0.026] 4.078 [0.161] 4.170 [0.164] 4.290 [0.169] TGA4505 Recommended Chip Assembly & Bonding Diagram Both-Sided Biasing Option Vd1/Vd2 Vd3 .01uf .01uf 100pf 100pf 100pf 100pf 100pf 100pf .01uf .01uf Vg1/Vg2/Vg3 Vd3 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 8 TGA4505 Alternative Chip Assembly & Bonding Diagram Single-Side Biasing Option Vg1/Vg2/Vg3 Vd1/Vd2 Vd3 .01uf .01uf .01uf 100pf 100pf 100pf 100pf 100pf RF IN RF OUT 100pf GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 9 TGA4505 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev - 10 |
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