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| VBO 22 Single Phase Rectifier Bridge IdAVM = 21 A VRRM = 800-1800 V VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type + VBO VBO VBO VBO VBO 22-08NO8 22-12NO8 22-14NO8 22-16NO8 22-18NO8 ~ ~ - Symbol IdAV IdAVM IFSM Conditions TC = 85C, module TC = 63C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 17 21 380 440 360 400 725 800 650 650 -40...+150 150 -40...+150 A A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features * Package with 1/4" fast-on terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Conditions TVJ = 25C; TVJ = TVJM; IF = 150 A; VR = VRRM VR = VRRM TVJ = 25C t = 1 min t=1s (M5) (10-32 UNF) 2500 3000 2 10% 18 10% 22 Characteristic Values 0.3 5.0 2.2 0.85 12 8.2 2.05 9.4 2.35 12.7 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 For power-loss calculations only per per per per diode; DC current module diode; DC current module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 420 (c) 2004 IXYS All rights reserved ~ ~ _ 1-2 VBO 22 IF(OV) -----IFSM 30 typ. IFSM (A) TVJ=45C TVJ=150C 340 10 3 A 1.6 380 2 As 25 20 T=150C 1.4 TVJ=45C TVJ=150C 1.2 15 1 10 0.8 0 VRRM 5 IF T=25C VF | 1 0.6 1/2 VRRM 1 VRRM 0 1 V | 1.5 1.5 0.4 0 10 1 10 t[ms] 2 10 3 10 10 2 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode 50 [W] 40 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 50 Fig. 3 i2dt versus time (1-10ms) per diode or thyristor PSD 25N 0.45 -0.05 0.95 = RTHCA [K/W] TC 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 C 150 30 [A] DC sin.180 rec.120 rec.60 rec.30 20 30 1.95 20 DC sin.180 rec.120 rec.60 rec.30 IFAVM 20 0 [A] 3.95 10 10 PVTOT 0 9.95 IdAV 0 50 100 TC(C) 150 200 50 Tamb 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 10 Z thJK Z thJC 8 K/W 6 4 2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 420 2-2 (c) 2004 IXYS All rights reserved |
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