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| AH116 Product Features * 800 - 1000 MHz * +28 dBm P1dB * +42 dBm Output IP3 * 17 dB Gain @ 900 MHz * Single Positive Supply (+5 V) * MTTF >100 Years * SOIC-8 SMT Package The Communications Edge TM Product Information 1/2 Watt, High Linearity InGaP HBT Amplifier Product Description The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +42 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Functional Diagram 1 8 7 6 5 2 3 4 Applications * Mobile Infrastructure * Final Stage Amplifier for Repeaters Function Vref Input / Base Output / Collector Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside 2, 4, 5 Specifications Parameters Frequency Range S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 900 MHz Units MHz dB dB dB dBm dBm dBm dB mA V Min 800 15 Typ 900 17 -18 -7 +28 +42 +23 7 250 +5 Max 1000 +27 +42 Noise Figure Operating Current Range (3) Device Voltage 200 300 Test conditions unless otherwise noted. 1. T = 25C, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameters Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power -40 to +85 C -65 to +150 C +20 dBm +8 V 400 mA 2W Ordering Information Part No. AH116-S8 AH116-S8PCB900 Rating Description 1/2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com January 2004 AH116 The Communications Edge TM Product Information 1/2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25C, unmatched 50 ohm system) S11 6 0. 1.0 0.8 6 0. 0.8 30 Swp Max 5.05GHz 2. 0 1.0 Gain_Maximum Stable Gain DB(|S[2,1]|) DB(GMax) 0. 4 S22 Swp Max 5.05GHz 2. 0 0 3. Gain (dB) 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10 -4 .0 -5. 0 0 5.0 0 10.0 15 10.0 0 .0 -2 -0 .6 -0 .6 0.1 0.2 0.3 0.4 -0.8 Swp Min 0.05GHz -0.8 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 5050 MHz, with markers placed at 0.5 - 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -2.72 -2.25 -2.31 -3.08 -5.79 -19.72 -6.06 -2.34 -1.28 -0.91 -0.71 -0.60 -0.58 -0.55 -0.51 -0.51 -0.54 24.16 20.33 17.23 15.63 15.58 15.22 11.91 6.92 2.28 -1.17 -4.40 -6.78 -8.70 -9.87 -10.59 -11.66 -13.08 133.35 124.95 119.37 98.28 69.70 25.60 -22.67 -56.59 -78.59 -96.56 -112.20 -128.36 -146.80 -169.80 160.74 128.82 95.01 -1.0 -36.72 -35.31 -34.90 -33.62 -32.10 -31.19 -33.26 -38.16 -41.14 -42.62 -40.78 -40.27 -37.79 -39.90 -37.66 -35.78 -35.88 29.75 13.96 2.32 -16.36 -37.73 -78.95 -129.67 176.95 132.98 113.65 98.57 74.44 53.03 53.88 41.18 31.88 27.61 -2.23 -3.08 -3.32 -3.48 -2.87 -2.27 -1.40 -1.49 -1.96 -2.53 -2.92 -3.29 -3.72 -3.96 -3.25 -1.97 -1.09 -1.0 0.5 0.6 0.7 Frequency (GHz) 0.8 0.9 1 .0 -2 -0 .4 .4 -0 -102.97 -137.03 -159.63 -172.70 -176.25 -179.74 173.15 165.12 160.84 160.80 157.57 155.77 155.24 158.19 160.80 158.05 149.64 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning Shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com January 2004 -3 .0 -5. -4 .0 0 5 2 -0. 2 -0. Swp Min 0.05GHz -10. 0 0. 2 20 0.2 0 4. 5.0 0. 4 25 0 3. 0 4. 5.0 10.0 -10. 0 -3 .0 AH116 Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 The Communications Edge TM Product Information 1/2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH116-S8PCB900) Typical RF Performance at 25C 900 MHz 17 dB -18 dB -7 dB +28 dBm +42 dBm +23 dBm 7 dB +5 V 250 mA (+17 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current C9 is placed at the silkscreen marker `11' or center of component placed at 29 deg. @ 960 MHz away from pin 6. DNP represents "Do not populate". S21 vs Frequency 20 18 S21 (dB) S11 vs. Frequency 0 -5 -10 S11 (dB) S22 vs. Frequency 0 -5 -10 S22 (dB) 16 14 12 10 840 -15 -20 -25 -30 -35 840 -15 -20 -25 -30 -35 840 +25C +85C -40C 860 880 900 920 940 +25C +85C -40C 860 880 900 920 940 +25C +85C -40C 860 880 900 920 940 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 8 P1 dB (dBm) NF (dB) P1 dB vs. Frequency 30 28 26 24 22 20 840 ACPR (dBm) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz 6 4 2 0 840 -40 -45 -50 -55 -60 -65 -70 -75 -80 18 19 20 21 22 Output Channel Power (dBm) +25C +85C -40C +25C +80C -40C 860 880 900 920 940 +25C +85C -40C 860 880 900 920 940 23 24 Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25, +13 dBm / tone OIP3 vs. Temperature freq. = 900, 901 MHz, +13 dBm /tone OIP3 vs. Output Power 45 43 OIP3 (dBm) 45 43 OIP3 (dBm) 45 43 OIP3 (dBm) freq. = 900, 901 MHz, +25C 41 39 37 35 840 41 39 37 35 41 39 37 860 880 900 920 940 -40 -15 Frequency (MHz) 10 35 Temperature (C) 60 85 35 8 10 12 14 16 18 20 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com January 2004 AH116 The Communications Edge TM Product Information 1/2 Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Marking The component will be marked with an "AH116S8" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part is located on the website in the "Application Notes" section. ESD / MSL Information Land Pattern ESD Rating: Class 1B Value: Passes at between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +240 C convection reflow Standard: JEDEC Standard J-STD-020A Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications MTTF (million hrs) MTTF vs. GND Tab Temperature 1000000 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature ( C ) Parameter Operating Case Temperature Thermal Resistance1, Rth Junction Temperature2, Tjc Rating -40 to +85 C 62 C / W 162 C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vd * Id 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com January 2004 |
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