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| 2SA2047 Transistor Medium power transistor (-30V, -0.5A) 2SA2047 !Features 1) High speed switching. (Tf : Typ. : 40ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -100A, IB = -100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 !External dimensions (Units : mm) 0.65 0.65 0.7 UMT3 0.3 (3) (1) 1.25 0.2 2.1 0.15 (2) (1)Emitter (2)Base (3)Collector 0.1Min. Each lead has same dimensions Abbreviated symbol : UV !Applications Small signal low frequency amplifier High speed switching !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Package Type 2SA2047 Code Basic ordering unit (pieces) Taping T106 3000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg 1 Pw=10ms 2 Each terminal mounted on a recommended land Limits -30 -30 -6 -0.5 -1.0 200 150 -55~+150 Unit V V V A A 1 mW 2 C C 0.9 1.3 2.0 1/3 2SA2047 Transistor !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO -30 - - V IC= -100A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100A - - -1.0 A VCB= -20V ICBO Collector cut-off current IEBO - - -1.0 A VEB= -4V Emitter cut-off current - -150 -300 mV IC= -100mA, IB= -10mA Collector-emitter saturation voltage VCE (sat) hFE VCE= -2V, IC= -50mA 120 - 390 - DC current gain fT - 400 - MHz VCE= -10V, IE=100mA, f=10MHz Transition frequency Collector output capacitance Cob - 10 - pF VCB= -10V, IE=0A, f=1MHz Ton - 40 - ns IC= -500mA Turn-on time IB1= -50mA Tstg - 100 - ns IB2=50mA Storage time Tf - 40 - ns VCC -25V Fall time !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) 1000 -1 Tstg 100 Tf Ton -0.1 100ms DC -0.01 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) 10ms 1ms 500us Ta=25C VCC= -25V IC/IB=10/1 1000 VCE= -2V 100 Ta=125C Ta=25C Ta= -40C Single non repetitive Pulse -0.001 -0.1 -1 -10 -100 10 -0.01 -0.1 -1 -10 10 -0.001 -0.01 -0.1 -1 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current () 1000 Ta=25C -1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) -10 Ta=25C DC CURRENT GAIN : hFE VCE= -5V VCE= -3V VCE= -2V 100 -0.1 Ta=125C Ta=25C Ta= -40C -1 IC/IB=100/1 IC/IB=20/1 IC/IB=10/1 -0.1 10 -0.001 -0.01 -0.1 -1 -10 -0.01 -0.001 -0.01 -0.1 -1 -0.01 -0.001 -0.01 -0.1 -1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current () Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current () Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current () 2/3 2SA2047 Transistor IC/IB=10/1 VCE= -2V Ta=125C Ta=25C Ta= -40C -0.1 TRANSITION FREQUENCY : fT (MHz) -10 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) -1 COLLECTOR CURRENT : IC (A) 1000 Ta=25C VCE= -10V -1 100 Ta= -40C -0.1 Ta=25C Ta=125C -0.01 -0.001 -0.01 -0.1 -1 -0.01 -0 -0.5 -1 -1.5 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs.Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C f=1MHz 10 1 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=50 VIN PW IB1 IC VCC -25V IB2 PW 50s DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% Ton Tstg Tf 3/3 |
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