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| www..com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG Rating 40 30 5 3 7 600 10 +150 -55 to +150 Unit V V V A A mA W o o .284(7.20) .268(6.80) 1 .035 Max (0.90) 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) .032 Max (0.80) .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380s, Duty Cycle 2% Min 40 30 5 30 100 - Typ 0.3 1 90 45 Max 1 1 0.5 2 500 - Unit V V V A A V V MHz pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 100~200 P 160~320 E 250~500 |
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