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DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES * High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) * High Voltage: VCEO = 50 V PACKAGE DRAWING (Unit: mm) 2.8 0.2 0.4 +0.1 -0.05 1.5 TYP. 0.65 -0.15 +0.1 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA Maximum Power Dissipation Total Power Dissipation at 25C Ambient Temperature PT 200 mW Maximum Temperatures Junction Temperature Tj 150 C Storage Temperature Range Tstg -55 to +150 C 2.9 0.2 0.95 0.95 TYP. TYP. 2 3 0.3 TYP. Marking 1.1 to 1.4 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Base to Saturation Voltage Base to Emitter voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob 0.55 90 200 0.15 0.86 0.62 250 3.0 MIN. TYP. MAX. 0.1 0.1 600 0.3 1.0 0.65 V V V MHz pF UNIT TEST CONDITIONS VCB = 60 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Note Note Note Note A A VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IE = -10 mA VCE = 6.0 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Marking hFE L4 90 to 180 L5 135 to 270 L6 200 to 400 L7 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17115EJ2V0DS00 (2nd edition) (Previous No. TC-1481C) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. to 0.1 0.16 +0.1 -0.06 0.4 -0.05 +0.1 1 c 1984 2SC1623 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 PT - Total Power Dissipation - mW 180 160 140 120 100 80 60 40 20 0 -20 0 Free air 20 40 60 80 100 120 140 160 180 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 45 40 IC - Collector Current - mA IC - Collector Current - mA 80 8 35 30 60 6 0.3 40 0.2 25 20 4 15 10 IB = 5.0 A 20 IB = 0.1 mA 0 0 0.4 0.8 1.2 1.6 VCE - Collector to Emitter Voltage - V 2.0 2 0 0 0 0 10 20 30 40 VCE - Collector to Emitter Voltage - V 50 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 6.0 V Pulsed 1000 1000 hFE - DC Current Gain 500 300 100 50 30 10 5 3 0.1 0.2 hFE - DC Current Gain VCE = 6.0 V 1.0 V 0.5 V 500 300 100 50 30 10 5 3 0.1 0.2 TA = 75C 25C -25C 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 0.5 1.0 2.0 5.0 10 20 IC - Collector Current - mA 50 100 2 Data Sheet D17115EJ2V0DS 2SC1623 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 6.0 V 50 Pulsed 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VBE(sat) - Base Saturation Voltage - V VCE(cat) - Collector Saturation Voltage - V 100 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA VCE(sat) VBE(sat) Pulsed IC = 50 A * IB 20 10 IC - Collector Current - mA 75 C 25C -25 C TA = IC = 50 A * IB 20 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V 1.0 50 100 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 10000 100 50 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE f = 1.0 MHz fT - Gain Bandwidth Product - MHz 5000 2000 1000 500 200 100 50 20 10 -0.1 -0.2 VCE =10 V 6 V 2V 1V Cib - Input Capacitance - pF Cob - Output Capacitance - pF 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 Cib (I C =0A ) Cob (I E =0A ) -0.5 -1 -2 -5 -10 -20 IE - Emitter Current - mA -50 -100 0.5 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V VEB - Emittor to Base Voltage - V SMALL SIGNAL CURRENT GAIN vs. DC CURRENT GAIN 1000 INPUT IMPEDANCE VOLTAGE FEEDBACK RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 100 50 50 hre - Voltage Feedback Ratio - x10-4 hfe - Small Signal Current Gain hoe - Output Admittance - S 800 80 40 hie - Input Impedance - k VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 40 VCE = 6.0 V IC = 1.0 mA f = 1.0 kHz 600 60 30 30 hoe hre hie 400 40 20 20 200 20 10 10 0 0 200 400 600 800 hFE - DC Current Gain 1000 0 0 0 200 400 600 800 hfe - Small Signal Current Gain 1000 Data Sheet D17115EJ2V0DS 3 2SC1623 NORMALIZED h-PARAMETER vs. COLLECTOR CURRENT 10 hie VCE = 6.0 V f = 1.0 kHz he(IC) He = he(IC = 1.0 mA) hoe hfe hfe 3 NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE ICE = 1.0 V f = 1.0 kHz He = he(VCE) he(VCE = 6 V) He - Normalized h - Parameter 5 hre 2 1 He - Normalized h - Parameter 2 hoe hre 1 hfe hie hoe hfe hie hre 0.5 hoe hre 0.2 0.1 hie 0.1 0.2 0.5 1 2 IC - Collector Current - mA 5 10 0 10 20 VCE - Collector to Emitter Voltage - V 30 4 Data Sheet D17115EJ2V0DS 2SC1623 * The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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