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| 2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications * High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) * * * * Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1314 Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) DC Pulse (Note 1) Symbol VCBO VCES VCEO VEBO IC ICP IB IBP PC Collector power dissipation PC (Note 2) Junction temperature Storage temperature range Tj Tstg Rating 30 30 10 6 2 4 0.4 0.8 500 1000 150 -55 to 150 mW Unit V V JEDEC V A SC-62 2-5K1A JEITA TOSHIBA Weight: 0.05 g (typ.) A Base current C C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on ceramic substrate (250 mm x 0.8 t) 2 1 2002-08-13 2SC2982 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min 10 6 140 70 Typ. 140 0.2 0.86 150 27 Max 0.1 0.1 600 0.5 1.5 V V MHz pF Unit A A V V Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 Marking Type name hFE classification SA 2 2002-08-13 2SC2982 IC - VCE 4.0 60 25 15 3.0 10 2.0 IB = 5 mA Common emitter Ta = 25C 500 1000 hFE - IC Ta = 100C 25 -25 (A) IC Collector current DC current gain hFE 300 100 50 30 Common emitter 1.0 0 0 0 1.0 2.0 3.0 4.0 10 0.01 0.03 0.1 0.3 1 VCE = 1 V 3 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 1 Common emitter 4.0 IC/IB = 40 3.2 IC - VBE Common emitter VCE = 1 V Collector-emitter saturation voltage VCE (sat) (V) 0.5 0.3 IC 2.4 Collector current (A) 0.1 0.05 0.03 Ta = 100C 1.6 25 -25 Ta = 100C -25 25 0.8 0.01 0.01 0.03 0.1 0.3 1 3 10 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (A) Base-emitter voltage VBE (V) Safe Operating Area 10 5 3 IC max (pulse)* 1.4 PC - Ta PC (W) IC max (continuous) 100 ms* 10 ms* (1) Mounted on ceramic substrate 2 (250 mm 0.8 t) (1) (2) No heat sink (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 IC 1 0.5 0.3 Collector power dissipation DC operation Ta = 25C Collector current 0.1 (2) *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. Tested without a substrate. 0.3 1 3 VCEO max 10 30 100 20 40 60 80 100 120 140 160 0.01 0.1 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) 3 2002-08-13 2SC2982 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-08-13 |
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