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a
EMI-EMC-Compliant, 15 kV ESD Protected, RS-232 Line Drivers/Receivers ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FUNCTIONAL BLOCK DIAGRAM
5V INPUT 0.1 F 10V 0.1 F 10V
12 C1+ +5V TO +10V VCC 11 VOLTAGE V+ 13 14 C1- DOUBLER 15 16
FEATURES Complies with 89/336/EEC EMC Directive ESD Protection to IEC1000-4-2 (801.2) 8 kV: Contact Discharge 15 kV: Air-Gap Discharge 15 kV: Human Body Model Fast Transient Burst (EFT) Immunity (IEC1000-4-4) Low EMI Emissions (EN55022) Eliminates Costly TranZorbs* 230 kbits/s Data Rate Guaranteed Single 5 V Power Supply Shutdown Mode 1 W Plug-In Upgrade for MAX2xxE Space Saving TSSOP Package Available APPLICATIONS Laptop Computers Notebook Computers Printers Peripherals Modems GENERAL DESCRIPTION
0.1 F 6.3V 0.1 F 10V T1OUT T2OUT T3OUT T4OUT R1IN R2IN R3IN R4IN R5IN
0.1 F
C2+ +10V TO -10V V- 17 VOLTAGE C2- INVERTER T1 T2 T3 T4 R1 R2 R3 R4 R5
2 3 1 28 9 4 27 23 18 25
T1IN CMOS INPUTS* T2IN T3IN T4IN R1OUT R2OUT CMOS OUTPUTS R3OUT R4OUT R5OUT EN (ADM211E) EN (ADM213E)
7 6 20 21 8 5 26 22 19 24
EIA/TIA-232 OUTPUTS
EIA/TIA-232 INPUTS**
ADM211E
GND ADM213E
10
SHDN (ADM211E) SHDN (ADM213E)
The ADM2xxE is a family of robust RS-232 and V.28 interface devices that operates from a single 5 V power supply. These products are suitable for operation in harsh electrical environments and are compliant with the EU directive on EMC (89/336/EEC). The level of emissions and immunity are both in compliance. EM immunity includes ESD protection in excess of 15 kV on all I-O lines (1000-4-2), Fast Transient Burst protection (1000-4-4) and Radiated Immunity (1000-4-3). EM emissions include radiated and conducted emissions as required by Information Technology Equipment EN55022, CISPR22. All devices fully conform to the EIA-232E and CCITT V.28 specifications and operate at data rates up to 230 kbps. Shutdown and Enable control pins are provided on some of the products. Please refer to Table I. The shutdown function on the ADM211E disables the charge pump and all transmitters and receivers. On the ADM213E the
*TranZorb is a registered trademark of General Semiconductor Industries, Inc.
NOTES: * INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT ** INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT
charge pump, all transmitters, and three of the five receivers are disabled. The remaining two receivers remain active, thereby allowing monitoring of peripheral devices. This feature allows the device to be shut down until a peripheral device begins communication. The active receivers can alert the processor which can then take the ADM213E out of the shutdown mode. Operating from a single 5 V supply, four external 0.1 F capacitors are required. The ADM207E and ADM208E are available in 24-lead DIP, SO, SSOP and TSSOP packages. The ADM211E and ADM213E are available in 28-lead SO, SSOP and TSSOP packages. All products are backward-compatible with earlier ADM2xx products, facilitating easy upgrading of older designs.
Table I. Selection Table
Model ADM206E ADM207E ADM208E ADM211E ADM213E REV. C
Supply Voltage 5V 5V 5V 5V 5V
Drivers 4 5 4 4 4
Receivers 3 3 4 5 5
ESD Protection 15 kV 15 kV 15 kV 15 kV 15 kV
Shutdown Yes No No Yes Yes (SD)*
Enable Yes No No Yes Yes (EN)
Packages R-24 N, R, RS, RU-24 N, R, RS, RU-24 R, RS, RU-28 R, RS, RU-28
*Two receivers active.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2001
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E-SPECIFICATIONS
(VCC = 5.0 V
Parameter Operating Voltage Range VCC Power Supply Current Shutdown Supply Current Input Pull-Up Current Input Logic Threshold Low, VINL Input Logic Threshold High, VINH Input Logic Threshold High, VINH CMOS Output Voltage Low, VOL CMOS Output Voltage High, VOH CMOS Output Leakage Current EIA-232 Input Voltage Range EIA-232 Input Threshold Low EIA-232 Input Threshold High EIA-232 Input Hysteresis EIA-232 Input Resistance Output Voltage Swing Transmitter Output Resistance RS-232 Output Short Circuit Current Maximum Data Rate Receiver Propagation Delay TPHL, TPLH Receiver Output Enable Time, tER Receiver Output Disable Time, tDR Transmitter Propagation Delay TPHL, TPLH Transition Region Slew Rate
1
10%, C1-C4 = 0.1 F. All specifications TMIN to TMAX unless otherwise noted.)
Min 4.5 Typ 5.0 3.5 0.2 10 2.4 2.4 0.4 3.5 0.05 -30 0.4 1.3 2.0 0.25 5 9.0 20 10 +30 2.4 7 Max 5.5 13 10 25 0.8 Unit V mA A A V V V V V A V V V V k V mA kbps 0.4 120 120 1 8 2 s ns ns s V/s TIN = GND TIN, EN, EN, SHDN, SHDN, TIN EN, EN, SHDN, SHDN IOUT = 1.6 mA IOUT = -40 A EN = VCC, EN = GND, 0 V ROUT VCC Test Conditions/Comments No Load
3 5.0 300 6 230
60
TA = 0C to 85C All Transmitter Outputs Loaded with 3 k to Ground VCC = 0 V, VOUT = 2 V RL = 3 k to 7 k, CL = 50 pF to 2500 pF CL = 150 pF
RL = 3 k, CL = 2500 pF RL = 3 k, CL = 50 pF to 2500 pF Measured from +3 V to -3 V or -3 V to +3 V Human Body Model IEC1000-4-2 Air Discharge IEC1000-4-2 Contact Discharge IEC1000-4-3
ESD Protection (I-O Pins)
EMI Immunity
NOTES 1 Guaranteed by design. Specifications subject to change without notice.
15 15 8 10
kV kV kV V/m
-2-
REV. C
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ABSOLUTE MAXIMUM RATINGS*
(TA = 25C unless otherwise noted.)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC -0.3 V) to +14 V V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -14 V Input Voltages TIN . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to (V+, +0.3 V) RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Output Voltages TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V ROUT . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to (VCC +0.3 V) Short Circuit Duration TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Power Dissipation N-24 DIP (Derate 13.5 mW/C above 70C) . . . . 1000 mW R-24 SOIC (Derate 12 mW/C above 70C) . . . . . 900 mW
RS-24 SSOP (Derate 12 mW/C above 70C) . . . . . 850 mW RU-24 TSSOP (Derate 12 mW/C above 70C) . . . 900 mW R-28 SOIC (Derate 12 mW/C above 70C) . . . . . . 900 mW RS-28 SSOP (Derate 10 mW/C above 70C) . . . . . 900 mW RU-28 TSSOP (Derate 12 mW/C above 70C) . . . 900 mW Operating Temperature Range Industrial (A Version) . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300C ESD Rating (MIL-STD-883B) (I-O Pins) . . . . . . . . . 15 kV ESD Rating (IEC1000-4-2 Air) (I-O Pins) . . . . . . . . 15 kV ESD Rating (IEC1000-4-2 Contact) (I-O Pins) . . . . . 8 kV
*This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
Table II. ADM211E Truth Table
ORDERING GUIDE
SHDN 0 0 1
X = Don't Care.
EN 0 1 X
Status Normal Operation Normal Operation Shutdown
TOUT1-4 Enabled Enabled Disabled
ROUT1-5 Enabled Disabled Disabled Model ADM206EAR ADM207EAN ADM207EAR ADM207EARS ADM207EARU ADM208EAN ADM208EAR ADM208EARS ADM208EARU ADM211EAR ADM211EARS ADM211EARU ADM213EAR ADM213EARS ADM213EARU
Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C
Package Package Description Option SOIC DIP SOIC SSOP TSSOP DIP SOIC SSOP TSSOP SOIC SSOP TSSOP SOIC SSOP TSSOP R-24 N-24 R-24 RS-24 RU-24 N-24 R-24 RS-24 RU-24 R-28 RS-28 RU-28 R-28 RS-28 RU-28
Table III. ADM213E Truth Table
SHDN 0 0 1 1
EN 0 1 0 1
Status Shutdown Shutdown Normal Operation Normal Operation
TOUT1-4 Disabled Disabled Enabled Enabled
ROUT1-3 Disabled Disabled Disabled Enabled
ROUT4-5 Disabled Enabled Disabled Enabled
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM206E/ADM207E/ADM208E/ADM211E/ADM213E features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. C
-3-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T3OUT 1 T1OUT 2 T2OUT 3 R1IN 4 R1OUT 5 T2IN 6 24 T4OUT 23 R2IN 22 R2OUT 21 SD
T3OUT 1 T1OUT 2 T2OUT 3 R1IN 4 R1OUT 5 T2IN 6 24 T4OUT 23 R2IN 22 R2OUT 21 T5IN
TOP VIEW 19 T4IN T1IN 7 (Not to Scale) 18 T3IN GND 8 VCC 9 C1+ 10 V+ 11 C1- 12 17 R3OUT 16 R3IN 15 V- 14 C2- 13 C2+
ADM206E
20 EN
TOP VIEW 19 T4IN T1IN 7 (Not to Scale) 18 T3IN GND 8 VCC 9 C1+ 10 V+ 11 C1- 12 17 R3OUT 16 R3IN 15 V- 14 C2- 13 C2+
ADM207E
20 T5OUT
Figure 1. ADM206E DIP/SOIC/SSOP Pin Configuration
Figure 3. ADM207E Pin Configuration
5V INPUT
5V INPUT
0.1 F 10V 10 C1+ 12 C1- 13 C2+ 14 C2- +5V TO +10V VOLTAGE DOUBLER VCC 9 0.1 F 6.3V 0.1 F
0.1 F 6.3V
10 C1+ 12 C1- 13 C2+ 14 C2-
+5V TO +10V VOLTAGE DOUBLER
VCC
9 0.1 F 6.3V 0.1 F
V+ 11
V+ 11
0.1 F 16V
+10V TO -10V VOLTAGE INVERTER
V- 15
0.1 F 10V
+10V TO -10V VOLTAGE INVERTER
V- 15
0.1 F 16V
T1IN
0.1 F 10V T1OUT T2OUT T3OUT T4OUT T5OUT R1IN R2IN R3IN EIA/TIA-232 INPUTS** EIA/TIA-232 OUTPUTS
7
T1
2
T1IN T2IN T3IN T4IN R1OUT TTL/CMOS OUTPUTS R2OUT
7
T1
2
T1OUT
T2IN 6 T2 3
6
T2
3 1
TTL/CMOS INPUTS*
T2OUT RS-232 OUTPUTS
CMOS INPUTS* T3IN T4IN 18 19 T3 T4 1
18 19 5 22
T3 T4 R1 R2
T3OUT
24
24 4 23
T4OUT
T5IN 21 5 22 T5 R1 R2 20 4 23
R1IN
R1OUT
R2IN R3IN
RS-232 INPUTS**
CMOS OUTPUTS
R2OUT
R3OUT EN
17 20 GND 8
R3
16 21
R3OUT
17 GND 8
R3
16
ADM206E
SD
ADM207E
*INTERNAL 400k PULL-UP RESISTOR ON EACH TTL/CMOS INPUT **INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT
*INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT **INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT
Figure 2. ADM206E Typical Operating Circuit
Figure 4. ADM207E Typical Operating Circuit
-4-
REV. C
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T3OUT 1 T2OUT 1 T1OUT 2 R2IN 3 R2OUT 4 T1IN 5 R1OUT 6 24 T3OUT 23 R3IN 22 R3OUT 21 T4IN T1OUT 2 T2OUT 3 R2IN 4 R2OUT 5 28 T4OUT 27 R3IN 26 R3OUT 25 SHDN
ADM211E 24 EN
ADM208E
20 T4OUT
TOP VIEW T2IN 6 (Not to Scale) 23 R4IN T1IN 7 R1OUT 8 R1IN 9 GND 10 VCC 11 C1+ 12 V+ 13 C1- 14 22 R4OUT 21 T4IN 20 T3IN 19 R5OUT 18 R5IN 17 V- 16 C2- 15 C2+
TOP VIEW 19 T3IN R1IN 7 (Not to Scale) 18 T2IN 17 R4OUT 16 R4IN 15 V- 14 C2- 13 C2+ VCC 9 C1+ 10 V+ 11 C1- 12
GND 8
Figure 5. ADM208E Pin Configuration
Figure 7. ADM211E Pin Configuration
5V INPUT
5V INPUT 10 C1+ 12 C1- 13 C2+ 14 C2- +5V TO +10V VOLTAGE DOUBLER VCC 9
0.1 F 10V
12 C1+ 14 C1- 15 C2+ 16 C2-
+5V TO +10V VOLTAGE DOUBLER
VCC 11 V+ 13
0.1 F 6.3V
0.1 F
0.1 F 10V
V+ 11
0.1 F 6.3V
0.1 F
0.1 F 10V
+10V TO -10V VOLTAGE INVERTER
V- 17
0.1 F 10V T1OUT T2OUT EIA/TIA-232 OUTPUTS T3OUT T4OUT R1IN R2IN R3IN R4IN R5IN SHDN EIA/TIA-232 INPUTS**
0.1 F 10V
+10V TO -10V VOLTAGE INVERTER
V- 15
0.1 F 10V T1OUT T2OUT EIA/TIA-232 OUTPUTS CMOS INPUTS*
T1IN T2IN T3IN
7
T1
2
6 20 21 8
T2
3 1
T1IN T2IN CMOS INPUTS* T3IN T4IN R1OUT R2OUT CMOS OUTPUTS R3OUT R4OUT
5
T1
2
T3 T4 R1 R2
18 19 21 6 4
T2
1
T4IN R1OUT
28 9 4
T3 T4 R1 R2
24
T3OUT T4OUT R2OUT 5 26 R1IN R2IN EIA/TIA-232 INPUTS** R3IN R5OUT 19 24 R5 18 R4IN EN GND 10 TTL/CMOS OUTPUTS R3OUT R4OUT R3 27 23
20 7 3
22
R4
22
R3
23
17 GND 8
R4
16
ADM208E
ADM211E
25
*INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT **INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT
*INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT **INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT
Figure 6. ADM208E Typical Operating Circuit
Figure 8. ADM211E Typical Operating Circuit
REV. C
-5-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
5V INPUT
T3OUT 1 T1OUT 2 T2OUT 3 R2IN 4 R2OUT 5 28 T4OUT 27 R3IN 26 R3OUT 25 SHDN
0.1 F 16V
12 C1+ 14 C1- 15 C2+ 16 C2-
+5V TO +10V VCC 11 VOLTAGE DOUBLER V+ 13 +10V TO -10V VOLTAGE INVERTER
0.1 F 6.3V
0.1 F
ADM213E 24 EN
TOP VIEW T2IN 6 (Not to Scale) 23 R4IN* T1IN 7 R1OUT 8 R1IN 9 GND 10 VCC 11 C1+ 12 V+ 13 C1- 14 22 R4OUT* 21 T4IN 20 T3IN 19 R5OUT* 18 R5IN* 17 V- 16 C2- 15 C2+
0.1 F 16V
V- 17
0.1 F 16V T1OUT T2OUT RS-232 OUTPUTS T3OUT T4OUT R1IN R2IN R3IN R4IN3 R5IN3 SHDN RS-232 INPUTS2
T1IN T2IN TTL/CMOS INPUTS1 T3IN T4IN R1OUT R2OUT TTL/CMOS OUTPUTS R3OUT R4OUT3 R5OUT3 EN
7
T1
2
6
T2
3
20 21 8 5 26
T3 T4 R1 R2
1
28 9 4
*ACTIVE IN SHUTDOWN
Figure 9. ADM213E Pin Configuration
R3
27 23
22
R4
19 24
R5
18
GND 10
ADM213E
25
NOTES 1INTERNAL 400k PULL-UP RESISTOR ON EACH CMOS INPUT 2INTERNAL 5k PULL-DOWN RESISTOR ON EACH RS-232 INPUT 3ACTIVE IN SHUTDOWN
Figure 10. ADM213E Typical Operating Circuit
PIN FUNCTION DESCRIPTIONS
Mnemonic VCC V+ V- GND C1+, C1- C2+, C2- TIN TOUT RIN ROUT EN/EN
Function Power Supply Input: 5 V 10%. Internally Generated Positive Supply (+9 V nominal). Internally Generated Negative Supply (-9 V nominal). Ground Pin. Must Be Connected to 0 V. External Capacitor 1 is connected between these pins. 0.1 F capacitor is recommended but larger capacitors up to 47 F may be used. External Capacitor 2 is connected between these pins. 0.1 F capacitor is recommended but larger capacitors up to 47 F may be used. Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 k pull-up resistor to VCC is connected on each input. Transmitter (Driver) Outputs. These are RS-232 signal levels (Typically 9 V). Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 k pull-down resistor to GND is connected on each input. Receiver Outputs. These are CMOS output logic levels. Receiver Enable (Active High on ADM213E, Active Low on ADM211E); This input is used to enable/disable the receiver outputs. With EN = Low ADM211E (EN = High ADM213E), the receiver outputs are enabled. With EN = High (EN = Low ADM213E), the receiver outputs are placed in a high impedance state. Shutdown Control (Active Low on ADM213E, Active High on ADM211E); Refer to Table II. In shutdown the charge pump is disabled, the transmitter outputs are turned off and all receiver outputs (ADM211E), receivers R1, R2, R3 (ADM213E) are placed in a high impedance state. Receivers R4 and R5 on the ADM213E continue to operate normally during shutdown. Power consumption in shutdown for all parts reduces to 5 W. -6- REV. C
SHDN/SHDN
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E Typical Performance Characteristics
80 70 60 50 LIMIT
80 70 60 50
dB V
dB V
40 30 20 10 0
40 30 20 10 0 START 30.0 MHz STOP 200.0 MHz
LIMIT
0.3
0.6
3 6 1 LOG FREQUENCY - MHz
18
30
TPC 1. EMC Conducted Emissions
TPC 4. EMC Radiated Emissions
9 7 5 3
Tx O/P - V
9 7
Tx O/P HI
Tx O/P HI LOADED
5 3
Tx O/P - V
1 -1 -3 -5
1 -1 -3 Tx O/P LO -5 -7 0
-7 -9 4.0
Tx O/P LO LOADED 4.5 5.0 VCC - V 5.5 6.0
500
1500 1000 2000 LOAD CAPACITANCE - pF
2500
3000
TPC 2. Transmitter Output Voltage High/Low vs. Load Capacitance @ 230 kbps
TPC 5. Transmitter Output Voltage vs. VCC
15
10 1 Tx O/P HI 5
T
SD V+
T
Tx O/P - V
0
2 3 Tx O/P LO T
-5
-10 V- -15 0 2 4 6 LOAD CURRENT - mA 8 10
CH 1 CH 3
5.00V 5.00V
CH 2
5.00V
M 50.0s
CH 1
3.1V
V+, V- EXITING SD
TPC 3. Transmitter Output Voltage vs. Load Current
TPC 6. Charge Pump V+, V- Exiting Shutdown
REV. C
-7-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
350 300 V- 250
15 V+
10
5
IMPEDANCE -
200 150 V+ 100 50 0 4.5
V+/V- - V
0
-5 V- -10
4.7
4.9 VCC - V
5.1
5.3
5.5
-15
0
5
10 LOAD CURRENT- mA
15
20
TPC 7. Charge Pump Impedance vs. VCC
TPC 8. Charge Pump V+, V- vs. Current
-8-
REV. C
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
GENERAL DESCRIPTION
S1 V+ FROM VOLTAGE DOUBLER GND C2 S2 S4 V- = -(V+) C4 S3 GND
The ADM206E/ADM207E/ADM208E/ADM211E/ADM213E are ruggedized RS-232 line drivers/receivers which operate from a single 5 V supply. Step-up voltage converters coupled with level shifting transmitters and receivers allow RS-232 levels to be developed while operating from a single 5 V supply. Features include low power consumption, high transmission rates and compatibility with the EU directive on electromagnetic compatibility. EM compatibility includes protection against radiated and conducted interference including high levels of electrostatic discharge. All RS-232 inputs and outputs contain protection against electrostatic discharges up to 15 kV and electrical fast transients up to 2 kV. This ensures compliance to IE1000-4-2 and IEC1000-4-4 requirements. The devices are ideally suited for operation in electrically harsh environments or where RS-232 cables are frequently being plugged/ unplugged. They are also immune to high RF field strengths without special shielding precautions. Emissions are also controlled to within very strict limits. CMOS technology is used to keep the power dissipation to an absolute minimum allowing maximum battery life in portable applications. The ADMxxE is a modification, enhancement and improvement to the AD230-AD241 family and derivatives thereof. It is essentially plug-in compatible and does not have materially different applications.
CIRCUIT DESCRIPTION
INTERNAL OSCILLATOR
Figure 12. Charge Pump Voltage Inverter
Transmitter (Driver) Section
The drivers convert 5 V logic input levels into EIA-232 output levels. With VCC = 5 V and driving an EIA-232 load, the output voltage swing is typically 9 V. Unused inputs may be left unconnected, as an internal 400 k pull-up resistor pulls them high forcing the outputs into a low state. The input pull-up resistors typically source 8 A when grounded, so unused inputs should either be connected to VCC or left unconnected in order to minimize power consumption.
Receiver Section
The receivers are inverting level shifters which accept EIA-232 input levels and translate them into 5 V logic output levels. The inputs have internal 5 k pull-down resistors to ground and are also protected against overvoltages of up to 25 V. The guaranteed switching thresholds are 0.4 V minimum and 2.4 V maximum. Unconnected inputs are pulled to 0 V by the internal 5 k pull-down resistor. This, therefore, results in a Logic 1 output level for unconnected inputs or for inputs connected to GND. The receivers have Schmitt trigger input with a hysteresis level of 0.5 V. This ensures error-free reception for both noisy inputs and for inputs with slow transition times.
ENABLE AND SHUTDOWN
The internal circuitry consists of four main sections. These are: 1. A charge pump voltage converter. 2. 5 V logic to EIA-232 transmitters. 3. EIA-232 to 5 V logic receivers. 4. Transient protection circuit on all I-O lines.
Charge Pump DC-DC Voltage Converter
The charge pump voltage converter consists of an 200 kHz oscillator and a switching matrix. The converter generates a 10 V supply from the input 5 V level. This is done in two stages using a switched capacitor technique as illustrated below. First, the 5 V input supply is doubled to 10 V using capacitor C1 as the charge storage element. The 10 V level is then inverted to generate -10 V using C2 as the storage element. Capacitors C3 and C4 are used to reduce the output ripple. If desired, larger capacitors (up to 47 F) can be used for capacitors C1-C4. This facilitates direct substitution with older generation charge pump RS-232 transceivers. The V+ and V- supplies may also be used to power external circuitry if the current requirements are small. Please refer to TPC 9 in the Typical Performance Characteristics section.
S1 VCC C1 S2 GND S4 VCC C3 S3 V+ = 2VCC
Table II and Table III show the truth tables for the enable and shutdown control signals. The enable function is intended to facilitate data bus connections where it is desirable to three state the receiver outputs. In the disabled mode, all receiver outputs are placed in a high impedance state. The shutdown function is intended to shut the device down, thereby minimizing the quiescent current. In shutdown, all transmitters are disabled and all receivers on the ADM211E are three-stated. On the ADM213E, receivers R4 and R5 remain enabled in shutdown. Note that the transmitters are disabled but are not three-stated in shutdown, so it is not permitted to connect multiple (RS-232) driver outputs together. The shutdown feature is very useful in battery operated systems since it reduces the power consumption to 1 W. During shutdown the charge pump is also disabled. The shutdown control input is active high on the ADM211E, and it is active low on the ADM213E. When exiting shutdown, the charge pump is restarted and it takes approximately 100 s for it to reach its steady state operating conditions.
INTERNAL OSCILLATOR
Figure 11. Charge Pump Voltage Doubler
REV. C
-9-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
High Baud Rate
The ADM2xxE feature high slew rates permitting data transmission at rates well in excess of the EIA-232-E specifications. RS-232 levels are maintained at data rates up to 230 kb/s even under worst case loading conditions. This allows for high-speed data links between two terminals, or indeed it is suitable for the new generation modem standards which require data rates of 200 kb/s. The slew rate is internally controlled to less than 30 V/s in order to minimize EMI interference.
3V EN INPUT 0V
RECEIVER INPUT
R1 RX D1 RIN D2
Figure 15a. Receiver Input Protection Scheme
RX
TOUT D1 D2
TRANSMITTER OUTPUT
tDR
VOH VOH -0.1V RECEIVER OUTPUT VOL +0.1V VOL
Figure 15b. Transmitter Output Protection Scheme
ESD TESTING (IEC1000-4-2)
NOTE: EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 13. Receiver-Disable Timing
3V EN INPUT 0V
tER
+3.5V RECEIVER OUTPUT +0.8V
IEC1000-4-2 (previously 801-2) specifies compliance testing using two coupling methods, contact discharge, and air-gap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage but does not make direct contact with the unit under test. With air discharge, the discharge gun is moved toward the unit under test, developing an arc across the air gap; hence the term airdischarge. This method is influenced by humidity, temperature, barometric pressure, distance, and rate of closure of the discharge gun. The contact-discharge method, while less realistic, is more repeatable, and is gaining acceptance in preference to the airgap method. Although very little energy is contained within an ESD pulse, the extremely fast rise-time, coupled with high voltages, can cause failures in unprotected semiconductors. Catastrophic destruction can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation which may result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. I-O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I-O cable can result in a static discharge that can damage or completely destroy the interface product connected to the I-O port. Traditional ESD test methods such as the MIL-STD-883B method 3015.7 do not fully test a product's susceptibility to this type of discharge. This test was intended to test a product's susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test: (a) The IEC test is much more stringent in terms of discharge ( energy. The peak current injected is over four times greater. (b) The current rise-time is significantly faster in the IEC test. (c) The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device under test. This test, therefore, is more representative of a real-world I-O discharge where the equipment is operating normally with power applied. For maximum peace of mind, however, both tests should be performed, thus ensuring maximum protection both during handling and later, during field service. REV. C
NOTE: EN IS THE COMPLEMENT OF EN FOR THE ADM213E
Figure 14. Receiver Enable Timing
ESD/EFT Transient Protection Scheme
The ADM2xxE uses protective clamping structures on all inputs and outputs that clamp the voltage to a safe level and dissipates the energy present in ESD (Electrostatic) and EFT (Electrical Fast Transients) discharges. A simplified schematic of the protection structure is shown in Figures 15a and 15b. Each input and output contains two back-to-back high-speed clamping diodes. During normal operation, with maximum RS-232 signal levels, the diodes have no effect as one or the other is reverse-biased, depending on the polarity of the signal. If, however, the voltage exceeds about 50 V, reverse breakdown occurs and the voltage is clamped at this level. The diodes are large p-n junctions designed to handle the instantaneous current surge which can exceed several amperes. The transmitter outputs and receiver inputs have a similar protection structure. The receiver inputs can also dissipate some of the energy through the internal 5 k resistor to GND as well as through the protection diodes. The protection structure achieves ESD protection up to 15 kV and EFT protection up to 2 kV on all RS-232 I-O lines. The methods used to test the protection scheme are discussed later.
-10-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
HIGH VOLTAGE GENERATOR R1 R2
Table IV. IEC1000-4-2 Compliance Levels
DEVICE UNDER TEST
C1
Level 1 2 3 4
Contact Discharge (kV) 2 4 6 8
Air Discharge (kV) 2 4 8 15
ESD TEST METHOD H. BODY MIL-STD883B IEC1000-4-2
R2 1.5k 330
C1 100pF 150pF
Figure 16. ESD Test Standards
Table V. ADM2xxE ESD Test Results
ESD Test Method
100 90
I-O Pin (kV) 15 8 15
IPEAK - %
MIL-STD-883B IEC1000-4-2 Contact Air
36.8
FAST TRANSIENT BURST TESTING (IEC1000-4-4)
10
tRL
tDL
TIME t
Figure 17. Human Body Model ESD Current Waveform
100 90
IPEAK - %
IEC1000-4-4 (previously 801-4) covers electrical fast-transient/ burst (EFT) immunity. Electrical fast transients occur as a result of arcing contacts in switches and relays. The tests simulate the interference generated when for example a power relay disconnects an inductive load. A spark is generated due to the well known back EMF effect. In fact, the spark consists of a burst of sparks as the relay contacts separate. The voltage appearing on the line, therefore, consists of a burst of extremely fast transient impulses. A similar effect occurs when switching on fluorescent lights. The fast transient burst test defined in IEC1000-4-4 simulates this arcing, and its waveform is illustrated in Figure 19. It consists of a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms intervals. It is specified for both power and data lines.
V
10 0.1 TO 1ns 30ns 60ns
300ms 15ms
TIME t
t
Figure 18. IEC1000-4-2 ESD Current Waveform
The ADM2xxE family of products are tested using both of the above-mentioned test methods. All pins are tested with respect to all other pins as per the MIL-STD-883B specification. In addition, all I-O pins are tested as per the IEC test specification. The products were tested under the following conditions: (a) Power-On--Normal Operation (b) Power-On--Shutdown Mode (c) Power-Off There are four levels of compliance defined by IEC1000-4-2. The ADM2xxE family of products meet the most stringent compliance level for both contact and for air-gap discharge. This means that the products are able to withstand contact discharges in excess of 8 kV and air-gap discharges in excess of 15 kV.
V
5ns
50ns
t
0.2/0.4ms
Figure 19. IEC1000-4-4 Fast Transient Waveform
REV. C
-11-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Table VI.
Level 1 2 3 4
V Peak (kV) PSU 0.5 1 2 4
V Peak (kV) I-O 0.25 0.5 1 2
Testing for immunity involves irradiating the device with an EM field. There are various methods of achieving this, including use of anechoic chamber, stripline cell, TEM cell, GTEM cell. A stripline cell consists of two parallel plates with an electric field developed between them. The device under test is placed within the cell and exposed to the electric field. There are three severity levels having field strengths ranging from 1 V to 10 V/m. Results are classified in a similar fashion to those for IEC1000-4-4. 1. Normal operation. 2. Temporary degradation or loss of function which is selfrecoverable when the interfering signal is removed. 3. Temporary degradation or loss of function which requires operator intervention or system reset when the interfering signal is removed. 4. Degradation or loss of function which is not recoverable due to damage. The ADM2xxE family of products easily meets Classification 1 at the most stringent (Level 3) requirement. In fact, field strengths up to 30 V/m showed no performance degradation, and errorfree data transmission continued even during irradiation.
Table VII. Test Severity Levels (IEC1000-4-3)
A simplified circuit diagram of the actual EFT generator is illustrated in Figure 20. The transients are coupled onto the signal lines using an EFT coupling clamp. The clamp is 1 m long and it completely surrounds the cable providing maximum coupling capacitance (50 pF to 200 pF typ) between the clamp and the cable. High energy transients are capacitively coupled onto the signal lines. Fast rise times (5 ns) as specified by the standard result in very effective coupling. This test is very severe since high voltages are coupled onto the signal lines. The repetitive transients can often cause problems where single pulses do not. Destructive latch-up may be induced due to the high energy content of the transients. Note that this stress is applied while the interface products are powered up and are transmitting data. The EFT test applies hundreds of pulses with higher energy than ESD. Worst-case transient current on an I-O line can be as high as 40A. Test results are classified according to the following: 1. Normal performance within specification limits. 2. Temporary degradation or loss of performance which is selfrecoverable. 3. Temporary degradation or loss of function or performance which requires operator intervention or system reset. 4. Degradation or loss of function which is not recoverable due to damage. The ADM2xxE have been tested under worst-case conditions using unshielded cables, and meet Classification 2. Data transmission during the transient condition is corrupted, but it may be resumed immediately following the EFT event without user intervention.
CD 50 OUTPUT
Level 1 2 3
EMISSIONS/INTERFERENCE
Field Strength V/m 1 3 10
EN55 022, CISPR22 defines the permitted limits of radiated and conducted interference from Information Technology (IT) equipment. The objective of the standard is to minimize the level of emissions both conducted and radiated. For ease of measurement and analysis, conducted emissions are assumed to predominate below 30 MHz and radiated emissions are assumed to predominate above 30 MHz.
CONDUCTED EMISSIONS
HIGH VOLTAGE SOURCE
RC CC
L
RM ZS
Figure 20. IEC1000-4-4 Fast Transient Generator
IEC1000-4-3 RADIATED IMMUNITY
IEC1000-4-3 (previously IEC801-3) describes the measurement method and defines the levels of immunity to radiated electromagnetic fields. It was originally intended to simulate the electromagnetic fields generated by portable radio transceivers or any other device that generates continuous wave radiated electromagnetic energy. Its scope has since been broadened to include spurious EM energy which can be radiated from fluorescent lights, thyristor drives, inductive loads, etc.
This is a measure of noise that is conducted onto the line power supply. Switching transients from the charge pump which are 20 V in magnitude and containing significant energy can lead to conducted emissions. Other sources of conducted emissions can be due to overlap in switch on-times in the charge pump voltage converter. In the voltage doubler shown below, if S2 has not fully turned off before S4 turns on, this results in a transient current glitch between VCC and GND which results in conducted emissions. It is therefore important that the switches in the charge pump guarantee break-before-make switching under all conditions so that instantaneous short circuit conditions do not occur. The ADM2xxE has been designed to minimize the switching transients and ensure break-before-make switching thereby minimizing conducted emissions. This has resulted in the level of emissions being well below the limits required by the specification. No additional filtering/decoupling other than the recommended 0.1 F capacitor is required.
-12-
REV. C
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Conducted emissions are measured by monitoring the line power supply. The equipment used consists of a LISN (Line Impedance Stabilizing Network) which essentially presents a fixed impedance at RF, and a spectrum analyzer. The spectrum analyzer scans for emissions up to 30 MHz and a plot for the ADM211E is shown in Figure 23.
S1 VCC C1 S2 GND S4 VCC C3 S3 V+ = 2V CC
RADIATED EMISSIONS
INTERNAL OSCILLATOR
Radiated emissions are measured at frequencies in excess of 30 MHz. RS-232 outputs designed for operation at high baud rates while driving cables can radiate high frequency EM energy. The reasons already discussed which cause conducted emissions can also be responsible for radiated emissions. Fast RS-232 output transitions can radiate interference, especially when lightly loaded and driving unshielded cables. Charge pump devices are also prone to radiating noise due to the high frequency oscillator and high voltages being switched by the charge pump. The move towards smaller capacitors in order to conserve board space has resulted in higher frequency oscillators being employed in the charge pump design. This has resulted in higher levels of emission, both conducted and radiated. The RS-232 outputs on the ADM2xxE products feature a controlled slew rate in order to minimize the level of radiated emissions, yet are fast enough to support data rates up to 230 kBaud.
RADIATED NOISE
Figure 21. Charge Pump Voltage Doubler
o1
o2
SWITCHING GLITCHES
DUT TURNTABLE ADJUSTABLE ANTENNA TO RECEIVER
Figure 22. Switching Glitches Figure 24. Radiated Emissions Test Setup
80 70 60 50 LIMIT
Figure 25 shows a plot of radiated emissions vs. frequency. This shows that the levels of emissions are well within specifications without the need for any additional shielding or filtering components. The ADM2xxE was operated at maximum baud rates and configured as in a typical RS-232 interface. Testing for radiated emissions was carried out in a shielded anechoic chamber.
80 70 60
dB V
40 30 20 10 0
0.3
0.6
1 3 6 LOG FREQUENCY - MHz
18
30
50
Figure 23. Conducted Emissions Plot
dB V
40 30 20 10 0 START 30.0 MHz STOP 200.0 MHz
LIMIT
Figure 25. Radiated Emissions Plot
REV. C
-13-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
24-Lead DIP (N-24)
1.275 (32.30) 1.125 (28.60)
24 1 13 12
0.280 (7.11) 0.240 (6.10) 0.325 (8.25) 0.300 (7.62) 0.195 (4.95) 0.115 (2.93)
PIN 1 0.210 (5.33) MAX 0.200 (5.05) 0.125 (3.18) 0.022 (0.558) 0.014 (0.356) 0.100 (2.54) BSC 0.060 (1.52) 0.015 (0.38) 0.150 (3.81) MIN 0.070 (1.77) SEATING 0.045 (1.15) PLANE
0.015 (0.381) 0.008 (0.204)
24-Lead SOIC (R-24)
0.6141 (15.60) 0.5985 (15.20)
24
13
0.2992 (7.60) 0.2914 (7.40)
1 12
0.4193 (10.65) 0.3937 (10.00)
PIN 1
0.1043 (2.65) 0.0926 (2.35)
0.0291 (0.74) 0.0098 (0.25)
45
0.0118 (0.30) 0.0500 0.0040 (0.10) (1.27) BSC
8 0 0.0192 (0.49) SEATING 0.0125 (0.32) 0.0138 (0.35) PLANE 0.0091 (0.23)
0.0500 (1.27) 0.0157 (0.40)
28-Lead SOIC (R-28)
0.7125 (18.10) 0.6969 (17.70)
28
15
0.2992 (7.60) 0.2914 (7.40)
1 14
0.4193 (10.65) 0.3937 (10.00)
PIN 1
0.1043 (2.65) 0.0926 (2.35)
0.0291 (0.74) 0.0098 (0.25)
45
0.0118 (0.30) 0.0040 (0.10)
0.0500 (1.27) BSC
8 0 0.0192 (0.49) SEATING 0.0125 (0.32) PLANE 0.0138 (0.35) 0.0091 (0.23)
0.0500 (1.27) 0.0157 (0.40)
-14-
REV. C
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
24-Lead SSOP (RS-24)
0.328 (8.33) 0.318 (8.08)
24
13
0.212 (5.38) 0.205 (5.21)
1 12
0.311 (7.9) 0.301 (7.64)
PIN 1 0.078 (1.98) 0.068 (1.73) 0.015 (0.38) 0.010 (0.25) 0.07 (1.78) 0.066 (1.67)
0.008 (0.203) 0.002 (0.050)
0.0256 (0.65) BSC
SEATING PLANE
0.009 (0.229) 0.005 (0.127)
8 0
0.037 (0.94) 0.022 (0.559)
28-Lead SSOP (RS-28)
0.407 (10.34) 0.397 (10.08)
28
15
0.212 (5.38) 0.205 (5.21) PIN 1
1 14
0.311 (7.9) 0.301 (7.64)
0.078 (1.98) 0.068 (1.73)
0.07 (1.79) 0.066 (1.67)
0.008 (0.203) 0.0256 (0.65) 0.002 (0.050) BSC
0.015 (0.38) SEATING 0.010 (0.25) PLANE
0.009 (0.229) 0.005 (0.127)
8 0
0.03 (0.762) 0.022 (0.558)
24-Lead TSSOP (RU-24)
0.311 (7.90) 0.303 (7.70)
24
13
0.177 (4.50) 0.169 (4.30) 0.256 (6.50) 0.246 (6.25)
1 12
PIN 1 0.006 (0.15) 0.002 (0.05) 0.0433 (1.10) MAX
SEATING PLANE
0.0256 (0.65) 0.0118 (0.30) BSC 0.0075 (0.19)
0.0079 (0.20) 0.0035 (0.090)
8 0
0.028 (0.70) 0.020 (0.50)
REV. C
-15-
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
28-Lead TSSOP (RU-28)
0.386 (9.80) 0.378 (9.60)
28
15
0.177 (4.50) 0.169 (4.30) 0.256 (6.50) 0.246 (6.25)
1 14
PIN 1 0.006 (0.15) 0.002 (0.05) 0.0433 (1.10) MAX
SEATING PLANE
0.0256 (0.65) BSC
0.0118 (0.30) 0.0075 (0.19)
0.0079 (0.20) 0.0035 (0.090)
8 0
0.028 (0.70) 0.020 (0.50)
Revision History
Location Page
Changed from REV. B to REV C.
Features
Change 460 kbits/s to 230 kbits/s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Specifications Table
Changed in Min, Typ, Max, Test Conditions/Comments columns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute Maximum Ratings
Deleted some items . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Figures
Change made in Figure 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical Performance Characteristics
Changes made in plots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7, 8
Table V.
Column removed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
-16-
REV. C
PRINTED IN U.S.A.
C00068-0-3/01(C)

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