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CV210-1A
Product Features
* High dynamic range downconverter with integrated LO and IF amplifiers
Cellular-band Dual-Branch Downconverter
Product Information
Product Description
The CV210-1A is a dual-channel high-linearity downconverter designed to meet the demanding performance, functionality, and cost goals of current and next generation mobile infrastructure basestations. It provides high dynamic range performance in a low profile surface-mount leadless package that measures 6x6 mm square. It is ideally suited for high dynamic range receiver front ends using diversity receive channels. Functionality includes frequency conversion and IF amplification, while an integrated LO driver amplifier powers the passive mixer. The MCM is implemented with reliable and mature GAs MESFET and InGaP HBT technology. Typical applications include frequency downconversion used in CDMA/GSM/TDMA, CDMA2000, W-CDMA, and EDGE 2.5G and 3G mobile base transceiver stations.
Functional Diagram
AMP1 INPUT IF1 OUTPUT 23 GND MIXER IF/RF1 GND 28 N/C 1 GND 2 BIAS 3 GND 4 N/C 5 GND 6 N/C 7 8 GND 9 MIXER IF/RF2 27 GND 26 25 24
* * * * * * * * *
Dual channels for diversity +30 dBm Input IP3 +11.5 dBm Input P1dB RF: 800 - 915 MHz IF: 65 - 120 MHz Single supply operation (+5 V) Pb-free 6mm 28-pin QFN package Low-side LO configuration Common footprint with other PCS/UMTS/cellular versions
RF/IF IF Amp 1
GND 22 21 BIAS 20 GND 19 N/C 18 GND 17 LO 16 GND 15 N/C 14 GND
LPF
LO Driver Amp IF Amp 2
RF/IF
10 GND 11 AMP2 INPUT 12 GND 13 IF2 OUTPUT
Top View
Specifications (1)
Parameters
RF Frequency Range LO Frequency Range IF Center Frequency Range % Bandwidth around IF center frequency IF Test Frequency SSB Conversion Gain Gain Drift over Temp (-40 C to 85 C) Input IP3 Input IP2 Input 1 dB Compression Point Noise Figure LO Input Drive Level LO-RF Isolation LO-IF Isolation Branch-Branch Isolation Return Loss: RF Port Return Loss: LO Port Return Loss: IF Port Operating Supply Voltage Supply Current Thermal Resistance Junction Temperature
Units
MHz MHz MHz % MHz dB dB dBm dBm dBm dB dBm dB dB dB dB dB dB V mA C / W C
Min
Typ
800 - 915 680 - 850 65 - 120 7.5 75 10 0.1 +30 +36.5 +11.5 10.5 0 20 35 56 15 20 16 +5 385
Max
Comments
See note 2 See note 3 12 1.5 Temp = 25 C Referenced to +25 C See note 4 See note 4 See note 4 See note 5 PLO = 0 dBm PLO = 0 dBm
8 -1.5 +25 +33
-2.5
+2.5
320
475 27 160
See note 6
1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm and IF = 75 MHz in a downconverting application at 25 C. 2. IF matching components affect the center IF frequency. Proper component values for other IF center frequencies than shown can be provided by emailing to applications.engineering@wj.com. 3. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around the total 7.5% bandwidth. ie. with a center frequency of 80 MHz, the specifications are valid from 80 6 MHz. 4. Assumes the supply voltage = +5 V. IIP3 is measured with f = 1 MHz with RFin = -5 dBm / tone. 5. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies. 6. The maximum junction temperature ensures a minimum MTBF rating of 1 million hours of usage.
End of Life Notice
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Voltage Junction Temperature
Rating
-40 to +85 C -55 to +150 C +5.5 V +220 C
Ordering Information
Part No.
CV210-1AF
Last time buy date: Oct. 9, 2010 Recommended replacement part: CV210-3AF Description
Cellular-band Dual-Branch Downconverter
(lead-free/RoHS-compliant 6x6mm QFN package)
CV210-1APCB75 Fully-Assembled Application Board, IF = 75MHz
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
Page 1 of 6 April 2010
CV210-1A
AMP1 INPUT GND GND IF1 OUTPUT MIXER IF/RF1 28 N/C 1 GND 2 BIAS 3 GND 4 N/C 5 GND 6 N/C 7 8 GND 9 MIXER IF/RF2 27 GND 26 25 24 23 GND 22 21 BIAS
Cellular-band Dual-Branch Downconverter
Product Information
Device Architecture / Application Circuit Information
RF/IF IF Amp 1
Typical Downconverter Performance Chain Analysis (Each Branch)
20 GND 19 N/C 18 GND
Stage LO Amp / MMIC Mixer IF Amplifier CV210-1A
Gain (dB) -8 18
Input P1dB (dBm)
Input IP3 (dBm)
NF (dB)
Current (mA) 85 150 385*
Gain (dB)
LPF
LO Driver Amp IF Amp 2
17 LO 16 GND 15 N/C
18.5 35.0 8.5 4.5 23.5 2.2 Cumulative Performance
Cumulative Performance Input Input NF P1dB IP3 (dB) (dBm) (dBm) -8 18.5 35.0 8.5 10 11.5 29.9 10.5 10 +11.5 +29.9 10.5
RF/IF
10 GND 11 AMP2 INPUT 12 GND 13 IF2 OUTPUT 14 GND
* The 2nd branch includes another mixer and IF amplifier, which increases the total current consumption of the MCM to be 385 mA.
Printed Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness
CV210-1A: The application circuit can be broken up into three main functions as denoted in the colored dotted areas above: RF/IF diplexing (blue), IF amplifier matching (green) and dc biasing (purple). There are various placeholders for chip components in the circuit schematic so that a common PCB can be used for all WJ dualbranch converters. Further details are given in the Application Note located on the website titled "CV2xx Series - PWB Design Guidelines". IF Amplifier Matching: The IF amplifier requires matching elements to optimize the performance of the amplifier to the desired IF center frequency. Since IF bandwidths are typically on the order of 5 to 10%, a simple two element matching network, in the form of either a high-pass or low-pass filter structure, is sufficient to match the MMIC IF amplifier over these narrow bandwidths. Proper component values for other IF center frequencies can be found in the IF Amplifier Matching Table or by e-mailing to sjcapplication.engineering@tqs.com.
External Diplexer: In a downconversion application, the incoming RF signal impinges on the switching elements of the mixer; the interaction with these switches produces a signal at the IF frequency. The two signals (RF and IF) are directed to the appropriate ports by the external diplexer. A six-element diplexer is used in the circuit implementation.
DC biasing: DC bias must be provided for the LO and IF amplifiers in the converter. R1 sets the operating current for the last stage of the LO amplifier and is chosen to optimize the mixer LO drive level. Proper RF chokes and bypass capacitors are chosen for proper amplifier biasing at the intended frequency of operation. The "+5 V" dc bias should be supplied directly from a voltage regulator.
IF Amplifier Matching
Frequency (MHz) L7 (nH) C17 (pF) R8 (ohms) L4 (nH) 40 470 24 4.7 470 50 430 15 4.7 240 75 150 22 3.3 330 100 150 10 2.2 330 125 120 8.2 2.2 330 130 120 6.8 2.2 330 155 100 5.6 2.2 330 169 82 5.0 2.2 330 180 82 4.7 2.2 330 210 82 3.3 2.2 220 240 56 3.9 2.2 220
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 6 April 2010
CV210-1A
Cellular-band Dual-Branch Downconverter
Product Information
Application Circuit: IF = 75 MHz (CV210-1APCB75)
Bill of Materials
Ref. Desig. R1 R2, R3, R4, L10 L11, C16, C17 R6, R7 C1, C5, C10, C15 C2, C8 C3, C9 C4, C11 C6, C12, C14 C7, C13 L1 L2, L6 L3, L7 L4, L8 L5, L9 C19, C20, C21, C22 U1 Component 11.3 chip resistor 0 chip resistor 3.3 chip resistor 1000 pF chip capacitor 3.9 pF chip capacitor 8.2 pF chip capacitor 22 pF chip capacitor .01 F chip capacitor 100 pF chip capacitor 120 nH chip inductor 12 nH chip inductor 22 nH chip inductor 150 nH chip inductor 220 nH chip inductor Do Not Place CV210-1A WJ Converter QFN Size 0805 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0805
PCB Layout
Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 6 April 2010
CV210-1A
Conversion Gain vs IF Frequency
LO = 0 dBm, 740 MHz
Cellular-band Dual-Branch Downconverter
Product Information
CV210-1APCB75 Application Circuit Performance Plots
Input IP3 vs IF Frequency
LO = 0 dBm, 740 MHz
Input IP2 vs IF Frequency
LO = 0 dBm, 740 MHz
Conversion Gain (dB)
12 Input IP3 (dBm) 11 10 9 8 7 65
-40 C +25 C +85 C
32 30 28 26 24 22 85 65
-40 C +25 C +85 C
40 Input IP2 (dBm) 38 36 34 32 30 85 65
-40 C +25 C +85 C
70
75 IF Frequency (MHz)
80
70
75 IF Frequency (MHz)
80
70
75 IF Frequency (MHz)
80
85
Conversion Gain vs RF Frequency
25 C, IF = 75 MHz, low-side LO
Input IP3 vs RF Frequency
25 C, IF = 75 MHz, low-side LO
Input IP2 vs RF Frequency
25 C, IF = 75 MHz, low-side LO
Conversion Gain (dB)
12 Input IP3 (dBm) 11 10 9 8 7 800 825 850 875
LO = -2.5 dBm LO = 0 dBm LO = 2.5 dBm
32 30 28 26 24 22 800 825 850 875
LO = -2.5 dBm LO = 0 dBm LO = 2.5 dBm
40 Input IP2 (dBm) 38 36 34 32 30 800 825 850 875
LO = -2.5 dBm LO = 0 dBm LO = 2.5 dBm
900
925
900
925
900
925
RF Frequency (MHz)
Conversion Gain vs RF Frequency
LO = 0 dBm, IF = 75 MHz, low-side LO
RF Frequency (MHz)
Input IP3 vs RF Frequency
LO = 0 dBm, IF = 75 MHz, low-side LO
RF Frequency (MHz)
Input IP2 vs RF Frequency
LO = 0 dBm, IF = 75 MHz, low-side LO
Conversion Gain (dB)
12 Input IP3 (dBm) 11 10 9 8 7 800
-40 C +25 C +85 C
32 30 28 26 24 22 925 800
-40 C +25 C +85 C
40 Input IP2 (dBm) 38 36 34 32 30 950 800
-40 C +25 C +85 C
825
850
875
900
825
850
875
900
925
825
850
875
900
925
950
RF Frequency (MHz)
Conversion Gain vs RF Frequency
25 C, LO = 0 dBm, IF = 75 MHz, low-side LO
RF Frequency (MHz)
Input IP3 vs RF Frequency
25 C, LO = 0 dBm, IF = 75 MHz, low-side LO
RF Frequency (MHz)
Input IP2 vs RF Frequency
25 C, LO = 0 dBm, IF = 75 MHz, low-side LO
12 Conversion Gain (dB) 11 10 9 8 7 800 825 850 875 Input IP3 (dBm)
32 Input IP2 (dBm) 30 28 26 24 22 800 825 850 875
40 38 36 34 32 30 800 825 850 875
Vdd = 4.9 V Vdd = 5.0 V Vdd = 5.1 V
900 925
Vdd = 4.9 V Vdd = 5.0 V Vdd = 5.1 V
900 925
Vdd = 4.9 V Vdd = 5.0 V Vdd = 5.1 V
900 925
RF Frequency (MHz)
RF Frequency (MHz)
RF Frequency (MHz)
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 6 April 2010
CV210-1A
L-R Isolation vs LO Frequency
Referenced with LO = 0 dBm
Cellular-band Dual-Branch Downconverter
Product Information
CV210-1APCB75 Application Circuit Performance Plots (cont'd)
L-I Isolation vs LO Frequency
Referenced with LO = 0 dBm
Branch-Branch Isolation vs RF Frequency
25 C
35 L-R Isolation (dB) L-I Isolation (dB) 30 25 20 15 10 5 0 650
-40 C +25 C +85 C
40 Isolation (dB)
-40 C +25 C +85 C
70 60 50 40 30 20 900 800 825 850 875 900 925
35 30 25 20 15
700
750
800
850
900
650
700
750
800
850
LO Frequency (MHz)
IF Return Loss vs IF Frequency
25 C
LO Frequency (MHz)
RF Return Loss vs RF Frequency
25 C
RF Frequency (MHz)
LO Return Loss vs LO Frequency
25 C
0 Return Loss (dB) Return Loss (dB) 5 10 15 20 25 30 65 70 75 IF Frequency (MHz) 80 85
0 5 10 15 20 25 30 800 825 850 875 900 925 Return Loss (dB)
0 5 10 15 20 25 30 700 725 750 775 800 825 850 875
RF Frequency (MHz)
Noise Figure vs Temperature Input P1dB vs Temperature
RF = 815 MHz, IF = 75 MHz, LO = 0 dBm @740 MHz
LO Frequency (MHz)
RF = 815 MHz, IF = 75 MHz, LO = 0 dBm @740 MHz
14 12 10 8 6 4 -40 -20 0 20 40 60 80
14 Input P1dB (dBm) 12 10 8 6 4 -40 -20 0 20 40 60 80
Noise Figure (dB)
Temperature (C)
Temperature (C)
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 6 April 2010
CV210-1A
Cellular-band Dual-Branch Downconverter
Product Information
CV210-1AF Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be lasermarked with a "CV210-1AF" product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
ESD Rating: Value: Test: Standard:
Class III Passes 500V to <1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Configuration / Land Pattern
Functional Pin Layout
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION No Connect GND LO Amp Bias GND No Connect GND No Connect GND Channel 2 Mixer IF/RF Port (goes to diplexer) GND Channel 2 IF Amp Input GND Channel 2 IF Amp Output / Bias GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION No Connect GND LO input GND No Connect GND +5 V GND Channel 1 IF Amp Output / Bias GND Channel 1 IF Amp Input GND Channel 2 Mixer IF/RF Port (goes to diplexer) GND
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 6 April 2010

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