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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, T C = 80C VCES IC,nom. IC ICRM 1200 300 625 600 V A A A TC=25C, Transistor Ptot 2,5 kW VGES +/- 20V V IF 300 A IFRM 600 A VR = 0V, t p = 10ms, T Vj = 125C I2t 19 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 300A, V GE = 15V, Tvj = 25C IC = 300A, V GE = 15V, Tvj = 125C IC = 12mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 3,2 - C f = 1MHz,Tvj = 25C,V CE = 25V, VGE = 0V Cies - 21 - nF f = 1MHz,Tvj = 25C,V CE = 25V, VGE = 0V VCE = 1200V, VGE = 0V, Tvj = 25C VCE = 1200V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C Cres ICES - 1,4 8 800 - 360 350 nF A A nA IGES - prepared by: Mark Munzer approved by: H. Hierholzer date of publication: 07.02.2000 revision: 2 1(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 300A, V CE = 600V VGE = 15V, R G = 3,3, Tvj = 25C VGE = 15V, R G = 3,3, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 300A, V CE = 600V VGE = 15V, R G = 3,3, Tvj = 25C VGE = 15V, R G = 3,3, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 300A, V CE = 600V VGE = 15V, R G = 3,3, Tvj = 25C VGE = 15V, R G = 3,3, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 300A, V CE = 600V VGE = 15V, R G = 3,3, Tvj = 25C VGE = 15V, R G = 3,3, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C IC = 300A, V CE = 600V, VGE = 15V RG = 3,3, Tvj = 125C, LS = 60nH IC = 300A, V CE = 600V, VGE = 15V RG = 3,3, Tvj = 125C, LS = 60nH tP 10sec, V GE 15V, R G = 3,3 TVj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 1800 25 A nH Eoff 36 mWs Eon 35 mWs tf 0,04 0,05 s s td,off 0,57 0,57 s s tr 0,05 0,07 s s td,on 0,05 0,06 s s min. typ. max. RCC`+EE` - 0,20 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 300A, V GE = 0V, Tvj = 25C IF = 300A, V GE = 0V, Tvj = 125C IF = 300A, - di F/dt = 5400A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 300A, - di F/dt = 5400A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 300A, - di F/dt = 5400A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Erec 9 21 mWs mWs Qr 28 58 As As IRM 348 420 A A VF min. - typ. 1,8 1,7 max. 2,3 2,2 V V 2(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,01 max. 0,05 0,125 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M6 M1 3 AL2O3 20 mm 11 mm 275 6 Nm M2 2,5 5 Nm G 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) V GE = 15V 600 500 Tj = 25C Tj = 125C 400 IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 600 I C = f (VCE) T vj = 125C 500 VGE = 17V VGE = 15V VGE = 13V 400 VGE = 11V VGE = 9V VGE = 7V IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 600 500 Tj = 25C Tj = 125C 400 IC [A] 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 600 I F = f (VF) 500 Tj = 25C Tj = 125C 400 IF [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = R goff =3,3 , VCE = 600V, T j = 125C 100 90 80 70 E [mJ] 60 50 40 30 20 10 0 0 100 200 300 400 500 600 Eoff Eon Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 160 140 120 100 E [mJ] 80 60 40 20 0 2 4 6 8 10 Eoff Eon Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 300A , V CE = 600V , T j = 125C 12 14 16 18 20 22 RG [] 6(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 22,27 0,006 34,12 0,006 2 16,95 0,029 50,84 0,035 3 10,76 0,043 26,33 0,033 4 0,02 1,014 13,71 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 700 600 500 VGE = 15V, R g = 3,3 Ohm, T vj = 125C IC [A] 400 300 200 100 0 0 IC,Modul IC,Chip 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM300GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GAL120DLC 8(8) Seriendatenblatt_BSM300GAL120DLC.xls |
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