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| SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAIL SP BSS84 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Peak Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL BVDSS VGS(th) IDSS MIN. -50 -0.8 -1.5 -1 -2 -2.0 -15 -60 -100 Gate-Source Leakage Current Drain Source On-State Resistance (1) Forward Transconductance (1) (2) Input Capacitance (2) Output Capacitance Reverse Transfer Capacitance (2) SYMBOL VDS ID IDM VGS PTOT tj:tstg TYP. MAX. VALUE -50 -130 -520 20 UNIT V mA mA V mW C 360 -55 to +150 UNIT V V A A ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Drain-Source Breakdown Voltage Gate-Source Threashold Voltage Zero gate Voltage Drain Current CONDITIONS. VGS=0V, ID=0.25mA VDS=VGS , ID=-1mA T j =25 C T j =125 C V DS =-50V, V GS =0V(2) T =25 C V DS =-25V, V GS =0V j IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 0.05 -1 6 0.07 40 15 6 10 10 18 25 -10 10 nA VGS = 20V VDS=0V VGS=-5V ID=-100mA VDS=-25V ID=-100mA VGS=0V VDS=-25V f=1MHz VDD=-30V ID=-0.27A VGS=-10V RGS=50 S pF Turn-On Time ton Turn-Off Time toff ns * (1) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% (2) Sample test. 3 - 69 |
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