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| CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x R Chips for relative 3x3mm Pressure Sensor Diameter of Wafer Die Size Metallization Frontside Passivation Chip Backside Die Thickness Dicing Pad Size in Diameter Pad Pitch Maximum Diameter of Rear Hole 150mm / 6" 3 mm x 3 mm Aluminum Oxide / CVD Nitride / Plasma Nitride / EPOS Silicon 850 100 m Sawing 200 m 500 m 1,2 mm (typ. 0,9 mm) Sectional View: (not to scale) oxide, CVD nitride epitaxial layer / piezo resistors systemchip AuSi - alloy constraint chip plasma nitride EPOS Metallization Front Side: Vin + Vout + Substrate Substrate Vout Vin Vout - Vin + 8/99 CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x R Electrical Characteristics for 3x3mm Pressure Sensor Chips Electrical Characteristics at T= 25C Parameter Bridge Resistance (1) Output Voltage (2) E1139R Breakdown Voltage (3) Leakage Current (4) VBR IR Symbol RB Vout -25 20 0 25 100 20 V nA min 4 max Unit 8 kOhm mV Testing Conditions (1) Bridge Resistance is measured between Pad 1 and 4 with Vin = 5V (2) Output Voltage is measured at relative pressure p= 0 kPa (E113xR) between Pad 2 (Vout+) and Pad 5 (Vout-) with Vin+ = 5V. Vin- is grounded. (3) Breakdown Voltage: Pads 1,2,4,5 grounded. Using a constant current of 100A between Pad 3 (plus) and ground (minus) the breakdown voltage is measured between Pad 3 and ground. (4) Leakage Current: Pads 1,2,4,5 are short circuited. A reverse bias VR=20V is applied between Pad 3 (plus) and ground (minus). IR is measured between ground (minus) and Pads 1,2,4,5. Infineon Vin + Vin + 1 2 Vout + Substrate 4 Vin Vout - Substrate 3 Vout - 5 8/99 CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x R Typical Data of 3x3mm Pressure Sensor Chips Typical Electrical Characteristics at T= 25C Chip E1132R E1133R E1134R E1135R E1136R Pressure Range pN (kPa) 60 160 400 1000 2500 Sensitivity s (mV/V/kPa) 0,4300 0,2000 0,1100 0,0520 0,0210 Full Scale Span p=pN, Vin = 5V Vfin (mV) 130 160 220 260 260 Linearity error FL (% / Vfin) +- 0,3 +- 0,3 +-0,3 +-0,3 +-0,3 Parameter Offset Voltage (p= p0, Vin= 5V) pressure hysteresis (1) Symbol V0 PH typ. Unit +- 10 mV +- 0,1 % / K (1) change of output voltage at atmospheric pressure after pressure cycle to PN. Typical Temperature Characteristics Note that temperature coefficient and -hysteresis of Offset and Span are strongly dependent on the mounting of the sensor. Parameter Temperature Coefficient of Span (1) Temperature Coefficient of Offset (1) E1132...6 R E1137...9 R Temperature Coefficient of Bridge Resistance (2) Termperature Hysteresis (3) Symbol TC Vfin TC V0 typ. Unit %/K -0,17 % / K +- 0,02 +- 0,01 TC RB TH +0,26 % / K +- 0,2 % / Vfin (1) change in value of V-fin between 25C and 125C relative to Vfin(25C) (2) change in value of RB between 25C and 125C relative to RB(25C) (3) change in V0(25C) or Vfin(25C) after temperature cycle 25C - 125C - 25C relative to Vfin(25C) 8/99 |
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